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! Sc hottk y Barrier Chip ! Guard Ring Die Construction for Transient Protection ! H i g h C u r r e n t C a p a b i l i t y A B A ! Low Power Loss, High Efficiency ! High Surge Current Capability ! For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity P r o t e c t i o n A p p l i c a t i o n s C /G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01D Mechanical D ata ! Cas e: DO -201AD, Molded Plastic ! Terminals: Plated Leads Solderable per MIL-STD-202, Method 208 ! Polarity: Cathode Band ! Weight: 1.2 grams (approx.) ! Mounting Position: Any ! Marking: Type Number ! Lead Free: For RoHS / Lead Free Version Maximum Ra tings and Electrical Characteristics @TA=25°C unless otherwise specified Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. P eak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR RM S Reverse Voltage VR(RMS) Av erage Rectified Output Current @T L = 95°C (Not e 1) IO Non-Repet i tive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) I FSM Forward V F = 10. 0A V FM P ea k R e v e r s e C u r r e n t @ TA = 25°C A t Rated DC Blocking Voltage @T A = 100°C IRM 0.2 20 mA T y pical Junction Capacitance (Note 2) Cj T y pical Thermal Resistance (Note 1) R/G01JA Operat i ng and Storage Temperature Range Tj, TSTG Note: 1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case. 1 of 2 SR1020L – SR10200L V 0.45 0. 55 0.80 0.90 V 100 150 105 200 140 Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com DO-201 AD Dim M in Max A 25.4 — B 8.50 9. C 1.20 1.30 D 5.0 5.60 All Di mensions in mm DO-201AD Dim M in Max A 24.5 — B 7.20 9. C 1.10 1.30 D 5.00 5.60 All Di mensions in mm 1030L SR 1040L SR 1050L SR 1060L SR 1080L SR 10100L SR 10150L SR 10200L SR 0.85 10.0A LOW VF SCHOTT KY BARRIER DIODE Alldatasheet
/G01 2 of 2 SR1020L – SR10200L SR1020L – SR10200L Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com /G01 /G01 C , CAPACIT ANCE (pF)j V , REVERSE VOLTAGE (V) Fig. 4 Typical Junction Capacitance R 100 1000 3000 0.1 1.0 10 100 T = 25 Cj ° 20-40 50- 100 0 20 40 60 80 100 120 140 I , INST ANTANEOUS REVERSE CURRENT (mA)R PERCENT OF RA TED PEAK REVERSE VOLTAGE (%) Fig. 5 Typical Reverse Characteristics T = 125 Cj ° T = 75 Cj ° T = 25 Cj ° 100 1.0 0.1 0.01 0.001 02 5 5 0 75 100 125 150 I A VERAGE FORWARD CURRENT (A)(AV), T , LEAD TEMPERATURE ( C) Fig. 1 Forward Current Derating Curve L ° Resistive or Inductive Load 0.01 0.1 1.0 0 0.2 0.4 0.6 0.8 1.0 I , INSTANT ANEOUS FORWARD CURRENT (A)F V , INSTANT ANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics F 100 20 –40 50 – 60 80 – 200 1 10 100 I , PEAK FOR W ARD SURGE CURRENT (A)FSM NUMBER OF CYCLES AT 60Hz Fig. 3 Max Non-Repetitive Peak Fwd Surge Current Single Half-Sine-Wave (JEDEC Method) 120 150 Alldatasheet