SR1020 ZSELEC | Alldatasheet
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tage @I 10.0 A 150 A 0.02 UnitCharacteristic Symbol V 250 pF 20 °C/W -65 to +150 °C SR1020 – SR10200 10.0 A SCHOTTKY BARRIER DIODE Feat ures Schottky Barrier Chip ! Guard Ring Die Construction for Transient Protection ! H i g h C u r r e n t C a p a b i l i t y A B A ! Low Power Loss, High Efficiency ! High Surge Current Capability ! For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity P r o t e c t i o n A p p l i c a t i o n s C /G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01D M echanical Data Case: DO-201AD, Molded Plastic ! Terminals: Plated Leads Solderable per MIL-STD-202, Method 208 ! Polarity: Cathode Band ! Weight: 1.2 grams (approx.) ! Mounting Position: Any ! Marking: Type Number ! Lead Free: For RoHS / Lead Free Version M aximum Ratings and Electrical Characteristics @TA=2 5°C unless otherwise specified Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRW M VR RMS Reverse Voltage VR( RMS) A verage Rectified Output Current @T L = 95°C (Not e 1) IO Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) I FS M Forward V F = 10.0A V FM P e ak R e v e r s e C u r r e n t @ TA = 25°C A t Rated DC Blocking Voltage @T A = 100°C IRM 20 mA Typical Junction Capacitance (Note 2) Cj Typical Thermal Resistance (Note 1) R/G01JA Operating and Storage Temperature Range Tj, TST G Not e: 1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case. 1 of 2 SR1020 – SR10200 V 0.6 0. 75 0.85 0.92 V 100 150 105 200 140 Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com DO-201 AD Di m M in Max A 25. 4 — B 8.50 9. 50 C 1.20 1.30 D 5.0 5.60 A ll Dimensions in mm DO-201AD Di m M in Max A 24. 5 — B 7. 20 9. 50 C 1.10 1.30 D 5.00 5.60 A ll Dimensions in mm 1030 SR 1040 SR 1050 SR 1060 SR 1080 SR 10100 SR 10150 SR 10200 SR Alldatasheet
/G01 2 of 2 SR1020 – SR10200 SR1020 – SR10200 Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com /G01/G01 C , CAPACITANCE (pF)j V , REVERSE VOL TAGE (V) Fig. 4 Typical Junction Capacitance R 100 1000 3000 0.1 1.0 10 100 T = 25 Cj ° 20- 50- 100 0 20 40 60 80 100 120 140 I , INST ANT ANEOUS REVERSE CURRENT (mA)R PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Fig. 5 Typical Reverse Characteristics T = 125 Cj ° T = 75 Cj ° T = 25 Cj ° 100 1.0 0.1 0.01 0.001 02 5 5 0 75 100 125 150 I AVERAGE FOR WARD CURRENT (A)(AV), T , LEAD TEMPERA TURE ( C) Fig. 1 Forward Current Derating Curve L ° Resistive or Inductive Load 0.01 0.1 1.0 0 0.2 0.4 0.6 0.8 1.0 I , INSTANTANEOUS FORWARD CURRENT (A)F V , INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics F 100 20 –40 50 – 60 80 – 200 1 10 100 I , PEAK FORWARD SURGE CURRENT (A)FSM NUMBER OF CYCLES AT 60Hz Fig. 3 Max Non-Repetitive Peak Fwd Surge Current Single Half-Sine-Wave (JEDEC Method) 120 150 Alldatasheet