SR1090 DSK | Alldatasheet
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FEATURES
Metal-Semiconductor junction with guard ring TO - 220AC Epitaxial construction Low forward voltage drop,low switching losses High surge capability MECHANICAL DATA Case:JEDEC TO--220AC,molded plastic Terminals: Solderable per MIL- STD-750,Method 2026 Polarity: As marked Weight: 0.064 ounces,1.81 gram Mounting position: Any Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,50 Hz,resistive or inductive load. For capacitive load,derate by 20%. SR 1090 SR 10100 Maximum recurrent peak reverse voltage V RRM V Max imum RMS v oltage V RMS V Maximum DC blocking voltage V DC V Maximum average forw ard rectified current @TC=125℃ Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load T J =125 Maximum instantaneous @IF=10A forw ard voltage (Note1) @ IF=20A V F V Maximum reverse current @T C =25 at rated DC blocking voltage @T C =100 Typical thermal resistance (Note2) R θJC Operating junction temperature range T J Storage temperature range T STG Note: 1. Pulse test:300us pulse width,1% duty cy cle. -55 --- + 150 90 100 I FSM 90 100 63 70 2. Thermal resistance junction to case. mA I R 0.1 A -55 --- + 175 2.0 0.80 150.0 6.0 SR1090 - - - SR10100 A For use in low voltage,high frequency inverters free xxxx wheeling,and polarity protection applications I F(AV) SCHOTTKY BARRIER RECTIFIERS VOLTAGE RANGE: 90 --- 100 V CURRENT: 10 A The plastic material carries U/L recognition 94V-0 10.0 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Dimensions in millimeters UNITS 0.95 1 2 10.2± 0.2 2.8± 0.1 19.0± 0.5 PIN 3.5± 0.3 0.9± 0.1 5.0± 0.1 13.8± 0.5 2.6± 0.2 0.5± 0.1 8.9± 0.2 1.4± 0.2 4.5± 0.2 φ 3 .8 ± 0 . 1 5 Diode Semiconductor Korea www.diode.kr
T J =125 C O T J =25 C O 100 0.1 0.01 0.001 800 20 40 60 100 0 20 40 60 80 100 120 140 160 Resistive or Inductive Load 3.0 x 3.0mm 40 µm Thick Copper Pad Areas AVERAGE FORWARD RECTIFIED CURRENT,AMPERES PEAK FORWARD SURGE CURRENT AMPERES AMPERES FIG.4 --TYPICAL REVERSE CHARACTERISTICS NUMBER OF CYCLES AT 60Hz FIG.2 -- PEAK FORWARD SURGE CURRENT FIG.3 -- TYPICAL INSTANTANEOUS INSTANTANEOUS REVERSE LEAKAGE FORWARD CHARACTERISTICS INSTANTANEOUS FORWARD CURRENT INSTANTANEOUS FORWARD VOLTAGE,VOLTS AMBIENT TEMPERATURE, SR1090 - - - SR10100 FIG.1 -- FORWARD CURRENT DERATING CURVE PERCENT OF RATED PEAK REVERSE VOLTAGE,% CURRENT, MILLIAMPERES 100 150 200 51 0 5 0 1 0 0 T J J MAX 8.3ms Single Half Sine-Wave 0.1 1.0 Pulse width=300 s 1% Duty Cycle 0.8 0.9 1.2 T J =25℃ IF=10A IF=20A www.diode.kr Diode Semiconductor Korea