SPW52N50C3 VBSEMI | Alldatasheet

Document overview

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Technical content

FEATURES

  • Low Gate Charge Q g Results in Simple Drive Requiremen t
  • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
  • Fully Characterized Capacitance and Avalanche Voltage and Current
  • L o w RDS(on)
  • Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

  • Switch Mode Power Supply (SMPS) Uninterruptible Power Supply
  • High Speed Power Switching
  • Hard Switched and High Frequency Circuits Notes a. Repetitive rating; pulse widt h limi ted by maximum junction temperature (see fig. 11). b. Starting T J = 25 °C, L = 0.82 mH, Rg = 25 , IAS = 47 A (see fig. 12c). c. I SD  47 A, dI/dt  230 A/μs, VDD  VDS, TJ  150 °C. d. 1.6 mm from case. PRODUCT SUMMARY VDS (V) 500 RDS(on) ()V GS = 10 V 0.080 Qg (Max.) (nC) 350 Qgs (nC) 85 Qgd (nC) 180 Configurat ion Single N-Channel MOSFET G D S G D S Super-247 Available ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SY MBOL LIMIT UNIT Drain-Source Voltage VDS 500 V Gate-Source Voltage VGS ± 30 Continuous Drain Current VGS at 10 V TC = 25 °C ID ATC = 100 °C 25 Pulsed Dra in Currenta IDM 180 Linear Derating Factor 4.3 W/°C Single P ulse Avalanche Energyb EAS 910 mJ Repetitive Avalanche Currenta IAR 40 A Repetitive A valanche Energya EAR 51 mJ Maximum Power Diss ipation TC = 25 °C PD 530 W Peak D iode Recovery dV/dtc dV/dt 9.0 V/ns Operatin g Junction and Storage Temperature Range TJ, Tstg - 55 to + 150 S oldering Recommendations (Peak Temperature) for 10 s 300d N-Channel 500V (D-S) Super Junction Power MOSFET E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw SPW52N50C3 A ll data sheet.com

a. Re petitive rating; pulse width limited by maximum junction tem perature (see fig. 11). b. Pulse width  400 μs; duty cycle  2 %. c. C oss eff. is a fi xed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDS. THERMAL RESI STANCE RATINGS PARAMETER SYMB OL TYP. MAX. UNIT Maximum Juncti on-to-Ambient RthJA -4 0 °C/WCase -to-Sink, Flat, Greased Surface RthCS 0.24 - Maximum Junction-to -Case (Drain) RthJC -0 .23 SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TES T CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdow n Voltage VDS VGS = 0 V, ID = 250 μA 500 - - V VDS Temperatur e Coefficient VDS/TJ Reference to 25 °C , ID = 1 mA - 0.60 - V /°C Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 3.0 - 5.0 V Gate-Source Leakage IGSS V GS = ± 30 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 500 V, VGS = 0 V - - 50 μA VDS = 400 V, VGS = 0 V, TJ = 125 °C - - 250 Drain-S ource On-State Resistance RDS(on) V GS = 10 V ID = 28 Ab - 0.080 -  Forwar d Transconductance gfs VDS = 50 V, ID = 28 A 23 - - S Dynamic Input Capacitance Ciss VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 - 8310 - pF O utput Capacitance Coss - 960 - Rev erse Transfer Capacitance Crss - 120 - Output Capacitance Coss VGS = 0 V VDS = 1.0 V, f = 1.0 MHz - 10170 - VDS = 400 V, f = 1.0 MHz - 240 - Effective Output Capacitance Coss eff. VDS = 0 V to 400 Vc - 440 - Total Gate Charge Qg VGS = 10 V ID = 47 A, VDS = 400 V, see fig. 6 and 13b - - 350 nC Gate-Sou rce Charge Qgs -- 8 5 Gate-Drain Charge Qgd - - 180 Turn-O n Delay Time td(on) VDD = 250 V, ID = 47 A, RG = 1.0 , see fig. 10b -2 5- ns Rise Ti me tr - 140 - Turn-O ff Delay Time td(off) -5 5- Fall T ime tf -7 4- Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I S MOSFET symbol showing the integral reverse p - n junction diode -- 4 7 A Pulsed Diode Forward Current a ISM - - 190 Body Diode Voltage VSD TJ = 25 °C, IS = 47 A, VGS = 0 Vb -- 1 . 5 V Bo dy Diode Reverse Recovery Time trr TJ = 25 °C, IF = 47 A, dI/dt = 100 A/μsb - 620 940 ns Bod y Diode Reverse Recovery Charge Q rr -1 4 2 1 μ C Body Diode Recovery Current IRRM -3 8-A Forwa rd Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) S D G E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw SPW52N50C3 A ll data sheet.com

ARACTERISTICS (25 °C, unless otherwise noted) Fig. 1 - Typi cal Output Characteristics Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics Fig. 4 - Normalized On-Resistance vs. Temperature 0.01 0.1 100 1000 0.1 1 10 100 20µs PULSE W IDTH T = 25 CJ ° TOP BOTTOM VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V V , Drai n-to-Source Voltage (V) I , Drain -to-Source Current (A) DS D 4.5V 0.1 100 1000 0.1 1 10 100 20µs PULSE W IDTH T = 150 CJ ° TOP BOTTOM VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V V , Drai n-to-Source Voltage (V) I , Drain -to-Source Current (A) DS D 4.5V 0.1 100 1000 4 5 6 7 8 9 10 11 12 V = 50V 20µs PULS E WIDTH DS V , Gate-to-S ource Voltage (V) I , Drain -to-Source Current (A) GS D T = 25 CJ ° T = 150 CJ ° -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 T , Junction Tem perature ( C) R , Drai n-to-Source On Resistance (Normal ized) J DS(on) V = I = GS D 10V 48A E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw SPW52N50C3 A ll data sheet.com

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 8 - Maximum Safe Operating Area 1 10 100 1000 VDS, Drain-to-Source Voltage (V) 100 1000 10000 100000 1000000 C,Capacitance(pF) Coss Crss Ciss VGS = 0V, f = 1 MH Z Ciss = Cgs + Cgd, Cds SHORT ED Crss = Cgd Coss = Cds + Cgd 0 50 100 150 200 250 300 350 Q , Total Ga te Charge (nC) V , Gate- to-Source Voltage (V) G GS I =D 48A V = 100VDS V = 250VDS V = 400VDS 0.1 100 1000 V ,Sourc e-to-Drain Voltage (V) I , Reverse Drai n Current (A) SD SD V = 0 V GS T = 25 CJ ° T = 150 CJ ° 100 1000 10 100 1000 OPERATION IN THIS AREA LI MITEDBY RDS(on) Single Pu lse T T = 150 C = 25 C° C V , Drai n-to-Source Voltage (V) I , Drain Current (A)I , Drain Current (A) DS D 10us 100us 1ms 10ms E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw SPW52N50C3 A ll data sheet.com

Fig. 9 - Maximum Drain Current vs. Case Temperature Fig. 10a - Switching Time Test Circuit Fig. 10b - Switching Time Waveforms Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 25 50 75 100 125 150 T , Case Te mperature ( C) I , Drain Cur rent (A) D Pulse width ≤ 1 µs Duty factor ≤ 0.1 % RD VGS RG D.U.T. 10 V VDS VDD VDS 90 % 10 % VGS td(on) tr td(off) tf 0.001 0.01 0.1 Notes: 1. Duty factor D =t / t 2. Peak T =P x Z + T 1 2 J DM thJC C P t t DM t , Rectangular Puls e Duration (sec) Thermal Response(Z ) thJC 0.01 0.02 0.05 0.10 0.20 D = 0.50 SINGLE PU LSE (THERMA L RESPONSE) E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw SPW52N50C3 A ll data sheet.com

Fig. 12a - Uncl amped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms Fig. 12c - Maximum Avalanche Energy vs. Drain Current Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit A RG IAS 0.01 Ωtp D.U.T LVDS - VDD Driver 15 V

20 V IAS

T , Junction Temperature( C) E , Single Pul se Avalanche Energy (mJ) J AS ID TOP BOTTOM 22A 30A 47A QGS QGD QG VG Charge 10 V D.U.T. 3 mA VGS VDS IG ID 0.3 µF 0.2 µF 50 k Ω 12 V Current regulator Current sampling resistors Same type as D.U.T. E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw SPW52N50C3 A ll data sheet.com

Fig. 14 - For N-Channel P.W. Period dI/dt Diode recovery dV/dt Ripple ≤ 5 % Body diode forward drop Re-applied voltage Reverse recovery current Body diode forward current VGS = 10 Va ISD Driver gate drive D.U.T. lSD waveform D.U.T. VDS waveform Inductor current D = P.W. Period Peak Diode Recovery dV/dt Test Circuit VDD  dV/dt controlled by Rg  Driver same type as D.U.T.  ISD controlled by duty factor “D”  D.U.T. - device under test D.U.T. Circuit layout considerations  Low stray inductance  Ground plane  Low leakage inductance current transformer R g Note a. VGS = 5 V for logic level devices VDD E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw SPW52N50C3 A ll data sheet.com

TO-274AA (High Voltage) Notes

  • Dimensioning and tolerancing per AS ME Y14.5M-1994
  • Dimension D and E do not include mold fl ash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outer extremes of the plastic body
  • Outline conforms to JEDEC ® outline to TO-274AA MILLIMETERS IN CHES MILLIMETERS INCHES c (1) 0.38 0.89 0 .015 ECN: X17-0056-Rev. B, 27-Mar-17 DWG: 5975 A C B E D L e b 0.10 (0.25) B AMM E1 D2 R Detail “A” A b2 b4 Detail “A” Scale: 2:1 10° 5° Lead Tip E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw SPW52N50C3 A ll data sheet.com

All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.tw) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. To the maximum extent permitted by applicable law on Taiwan VBsemi relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability, including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties, including a particular purpose, non-infringement and merchantability guarantee. Statement on certain types of applications are based on knowledge of the product is often used in a typical application of the general product VBsemi Taiwan demand that the Taiwan VBsemi of. Statement on whether the product is suitable for a particular application is non-binding. It is the customer's responsibility to verify specific product features in the products described in the specification is appropriate for use in a particular application. Parameter data sheets and technical specifications can be provided may vary depending on the application and performance over time. All operating parameters, including typical parameters must be made by customer's technical experts validated for each customer application. Product specifications do not expand or modify Taiwan VBsemi purchasing terms and conditions, including but not limited to warranty herein. Unless expressly stated in writing, Taiwan VBsemi products are not intended for use in medical, life saving, or life sustaining applications or any other application. Wherein VBsemi product failure could lead to personal injury or death, use or sale of products used in Taiwan VBsemi such applications using client did not express their own risk. Contact your authorized Taiwan VBsemi people who are related to product design applications and other terms and conditions in writing. The information provided in this document and the company's products without a license, express or implied, by estoppel or otherwise, to any intellectual property rights granted to the VBsemi act or document. Product names and trademarks referred to herein are trademarks of their respective representatives will be all. Material Category Policy Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be RoHS compliant and meets the definition of restrictions under Directive of the European Parliament 2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and electronic equipment (EEE) - modification, unless otherwise specified as inconsistent.(www.VBsemi.tw) Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive 2011/65 /. Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products conform to confirm compliance with IEC 61249-2-21 standard level JS709A. E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw SPW52N50C3 A ll data sheet.com