SPW11N60S5_08 INFINEON | Alldatasheet
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2008-02-11Rev. 2.4 Page 1 SPW11N60S5 Cool MOS™ Power Transistor VDS 600 V RDS(on) 0.38 Ω ID 11 A Feature
- New revolutionary high voltage technology
- Ultra low gate charge
- Periodic avalanche rated
- Extreme dv/dt rated
- Ultra low effective capacitances
- Improved transconductance PG-TO247 Type Package Ordering Code SPW11N60S5 PG-TO247 Q67040-S4239 Marking 11N60S5 Maximum Ratings Parameter Symbol Value Unit Continuous drain current TC = 25 °C TC = 100 °C ID A Pulsed drain current, tp limited by Tjmax ID puls 22 Avalanche energy, single pulse ID = 5.5 A, VDD = 50 V EAS 340 mJ Avalanche energy, repetitive tAR limited by Tjmax1) ID = 11 A, VDD = 50 V EAR 0.6 Avalanche current, repetitive tAR limited by Tjmax IAR 11 A Gate source voltage VGS ±20 V Gate source voltage AC (f >1Hz) VGS ±30 Power dissipation, TC = 25°C Ptot 125 W Operating and storage temperature Tj , Tstg -55... +150 °C Please note the new package dimensions arccording to PCN 2009-134-A
2008-02-11Rev. 2.4 Page 2 SPW11N60S5 Maximum Ratings Parameter Symbol Value Unit Drain Source voltage slope VDS = 480 V, ID = 11 A, Tj = 125 °C dv/dt 20 V/ns Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Thermal resistance, junction - case RthJC - - 1 K/W Thermal resistance, junction - ambient, leaded RthJA - - 62 Soldering temperature, wavesoldering 1.6 mm (0.063 in.) from case for 10s Tsold - - 260 °C Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA 600 - - V Drain-Source avalanche breakdown voltage V(BR)DS VGS=0V, ID=11A - 700 - Gate threshold voltage VGS(th) ID=500µΑ, VGS=VDS 3.5 4.5 5.5 Zero gate voltage drain current IDSS VDS=600V, VGS=0V, Tj=25°C, Tj=150°C 250 µA Gate-source leakage current IGSS VGS=20V, VDS=0V - - 100 nA Drain-source on-state resistance RDS(on) VGS=10V, ID=7A, Tj=25°C Tj=150°C 0.34 0.92 0.38 Ω Gate input resistance RG f=1MHz, open Drain - 29 - Please note the new package dimensions arccording to PCN 2009-134-A
2008-02-11Rev. 2.4 Page 3 SPW11N60S5 Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Characteristics Transconductance gfs VDS≥2*ID*RDS(on)max, ID=7A - 6 - S Input capacitance Ciss VGS=0V, VDS=25V, f=1MHz - 1460 - pF Output capacitance Coss - 610 - Reverse transfer capacitance Crss - 21 - Effective output capacitance,2) energy related Co(er) VGS=0V, VDS=0V to 480V - 45 - pF Effective output capacitance,3) time related Co(tr) - 85 - Turn-on delay time td(on) VDD=350V, VGS=0/10V, ID=11A, RG=6.8Ω - 130 - ns Rise time tr - 35 - Turn-off delay time td(off) - 150 225 Fall time tf - 20 30 Gate Charge Characteristics Gate to source charge Qgs VDD=350V, ID=11A - 10.5 - nC Gate to drain charge Qgd - 24 - Gate charge total Qg VDD=350V, ID=11A, VGS=0 to 10V - 41.5 54 Gate plateau voltage V(plateau) VDD=350V, ID=11A - 8 - V 1Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f. 2Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS. 3Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Please note the new package dimensions arccording to PCN 2009-134-A
2008-02-11Rev. 2.4 Page 4 SPW11N60S5 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Inverse diode continuous forward current IS TC=25°C - - 11 A Inverse diode direct current, pulsed ISM - - 22 Inverse diode forward voltage VSD VGS=0V, IF=IS - 1 1.2 V Reverse recovery time trr VR=350V, IF=IS , diF/dt=100A/µs - 650 1105 ns Reverse recovery charge Qrr - 7.9 - µC Typical Transient Thermal Characteristics Symbol Value Unit Symbol Value Unit typ. typ. Thermal resistance Rth1 0.015 K/W Rth2 0.03 Rth3 0.056 Rth4 0.197 Rth5 0.216 Rth6 0.083 Thermal capacitance Cth1 0.0001878 Ws/K Cth2 0.0007106 Cth3 0.000988 Cth4 0.002791 Cth5 0.007285 Cth6 0.063 External HeatsinkTj Tcase Tamb Cth1 Cth2 Rth1 Rth,n Cth,n Ptot (t) Please note the new package dimensions arccording to PCN 2009-134-A
2008-02-11Rev. 2.4 Page 5 SPW11N60S5
1 Power dissipation
Ptot = f (TC) 0 20 40 60 80 100 120 °C 160 TC 100 110 120 W 140 SPW11N60S5 Ptot
2 Safe operating area
ID = f ( VDS ) parameter : D = 0 , TC=25°C 10 0 10 1 10 2 10 3 V VDS -210 -110 010 110 210 A ID tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms DC3 Transient thermal impedance ZthJC = f (tp) parameter: D = tp/T 10 -7 10 -6 10 -5 10 -4 10 -3 10 -1 s tp -410 -310 -210 -110 010 110 K/WZthJC D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse 4 Typ. output characteristic ID = f (VDS); Tj=25°C parameter: tp = 10 µs, VGS 0 5 10 15 VDS 25 V A ID 20V 12V 10V Please note the new package dimensions arccording to PCN 2009-134-A
2008-02-11Rev. 2.4 Page 6 SPW11N60S5 5 Typ. output characteristic ID = f (VDS); Tj=150°C parameter: tp = 10 µs, VGS 0 5 10 15 V 25 VDS A ID 20V 12V 10V 6 Typ. drain-source on resistance RDS(on)=f(ID) parameter: Tj=150°C, VGS 0 2 4 6 8 10 12 14 A 18 ID 0.5 mΩ RDS(on) 20V 12V 10V
7 Drain-source on-state resistance
RDS(on) = f (Tj) parameter : ID = 7 A, VGS = 10 V -60 -20 20 60 100 °C 180 Tj 0.2 0.4 0.6 0.8 1.2 1.4 1.6 1.8 Ω 2.1 SPW11N60S5 RDS(on) typ 98% 8 Typ. transfer characteristics ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max parameter: tp = 10 µs 0 4 8 12 V 20 VGS A ID 25 °C 150 °C Please note the new package dimensions arccording to PCN 2009-134-A
2008-02-11Rev. 2.4 Page 7 SPW11N60S5 9 Typ. gate charge VGS = f (QGate) parameter: ID = 11 A pulsed 0 10 20 30 40 50 nC 65 QGate V SPW11N60S5 VGS
0.2 VDS max
0.8 VDS max
10 Forward characteristics of body diode
IF = f (VSD) parameter: Tj , tp = 10 µs VSD -110 010 110 210 A SPW11N60S5 IF Tj = 25 °C typ Tj = 25 °C (98%) Tj = 150 °C typ Tj = 150 °C (98%)
11 Avalanche SOA
IAR = f (tAR) par.: Tj ≤ 150 °C 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 4 µs tAR A IAR Tj(START)=125°C Tj(START)=25°C
12 Avalanche energy
EAS = f (Tj) par.: ID = 5.5 A, VDD = 50 V 20 40 60 80 100 120 °C 160 Tj 100 150 200 250 mJ 350 EAS Please note the new package dimensions arccording to PCN 2009-134-A
2008-02-11Rev. 2.4 Page 8 SPW11N60S5
13 Drain-source breakdown voltage
V(BR)DSS = f (Tj) -60 -20 20 60 100 °C 180 Tj 540 560 580 600 620 640 660 680 V 720 SPW11N60S5 V(BR)DSS
14 Avalanche power losses
PAR = f (f ) parameter: EAR=0.6mJ 10 4 10 5 10 6 Hz f 100 150 200 W 300 PAR 15 Typ. capacitances C = f (VDS) parameter: VGS=0V, f=1 MHz 0 100 200 300 400 V 600 VDS 010 110 210 310 410 pF C Ciss Coss Crss 16 Typ. Coss stored energy Eoss=f(VDS) 0 100 200 300 400 V 600 VDS 0.5 1.5 2.5 3.5 4.5 5.5 µJ 7.5 Eoss Please note the new package dimensions arccording to PCN 2009-134-A
2008-02-11Rev. 2.4 Page 9 SPW11N60S5 Definition of diodes switching characteristics Please note the new package dimensions arccording to PCN 2009-134-A
8211Rev. 2.4 PDJH 63:116S5 3G72 Please note the new package dimensions arccording to PCN 2009-134-A
2008-02-11Rev. 2.4 Page 11 63:116S5 Please note the new package dimensions arccording to PCN 2009-134-A
New package outlines TO-247 Final Data Sheet Erratum Rev. 2.0, 2010-02-01
1 New package outlines TO-247
Assembly capacity extension for CoolMOSTM technology products assembled in lead-free package PG-TO247-3 at subcontractor ASE (Weihai) Inc., China (Changes are marked in blue.) Figure 1 Outlines TO-247, dimensions in mm/inches