SPV1002D40 STMICROELECTRONICS | Alldatasheet
Document overview
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- PDF pages: 12
Technical content
Features
■ IF = 16 A, VR = 40 V ■ Very low forward voltage drop ■ Very low reverse leakage current ■ 175 °C operating junction temperature
Applications
■ Photovoltaic panels
Description
The SPV1002 is a system-in-package solution for photovoltaic applications to perform cool bypass rectification similar to that of a conventional Schottky diode but with much lower forward voltage drop and reverse leakage current. The device consists of a power MOSFET transistor which charges a capacitor during the OFF time, and drives its gate during the ON time using the charge previously stored in the capacitor. The ON and OFF times are set to reduce the average voltage drop across the drain and source terminals, resulting in reduced power dissipation. A K A A K K A TO220 D2PAK Table 1. Device summary
1 Maximum ratings
1.1 Absolute maximum ratings
Table 2. Absolute maximum ratings
60 Hz) 250 A
2 Electrical characteristics
Table 3. Electrical characteristics
- For correct power dissipation and heatsink sizing, please refer to Figure 1, 4 and 5.
Device description SPV1002 4/12 Doc ID 018839 Rev 3
3 Device description
A photovoltaic panel consists of a series of PV cells. In optimal conditions, all the cells are equally irradiated and function at the same current level. However, during normal operation some cells may become partially shaded or obscured. These shaded cells limit the current generated by the fully irradiated cells and, in the extreme cases where these cells are totally obscured, the current flow is blocked. In this case the shaded cells behave like a load, and the current generated from the fully irradiated cells produces overvoltages which can reach the breakdown threshold. This phenomenon, known as a “hot spot”, can cause overheating of the shaded cells and, in some cases, even permanent damage resulting in current leakage. To prevent hot spots, therefore, bypass diodes are connected in parallel to the cell strings. The device described here has the same functionality as a Schottky diode, but with improved performance. It features very low forward voltage drop and reverse leakage current. It consists of a power MOSFET transistor which charges a capacitor during the OFF time, and drives its gate during the ON time using the charge previously stored in the capacitor. The ON and OFF times are set to reduce the average voltage drop across the drain and source terminals, resulting in reduced power dissipation.
Figure 5. Thermal resistance junction-to-
- Epoxy printed board FR4, Cu = 35 µm
4 Package mechanical data
specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. Table 4. TO-220 type A mechanical data
Figure 6. TO-220 type A drawing
Table 5. D²PAK (TO-263) mechanical data
Figure 7. D²PAK (TO-263) drawing
5 Revision history
Table 6. Document revision history