SPU03N60S5_08 INFINEON | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 11
Technical content
2008-04-07Rev. 2.5 Page 1 SPU03N60S5 SPD03N60S5 Cool MOS™ Power Transistor VDS 600 V RDS(on) 1.4 Ω ID 3.2 A Feature
- New revolutionary high voltage technology
- Ultra low gate charge
- Periodic avalanche rated
- Extreme dv/dt rated
- Ultra low effective capacitances
- Improved transconductance PG-TO251PG-TO252 321 Type Package Ordering Code SPU03N60S5 PG-TO251 Q67040-S4227 SPD03N60S5 PG-TO252 Q67040-S4187 Marking 03N60S5 03N60S5 Maximum Ratings Parameter Symbol Value Unit Continuous drain current TC = 25 °C TC = 100 °C ID 3.2 A Pulsed drain current, tp limited by Tjmax ID puls 5.7 Avalanche energy, single pulse ID = 2.4 A, VDD = 50 V EAS 100 mJ Avalanche energy, repetitive tAR limited by Tjmax1) ID = 3.2 A, VDD = 50 V EAR 0.2 Avalanche current, repetitive tAR limited by Tjmax IAR 3.2 A Gate source voltage VGS ±20 V Gate source voltage AC (f >1Hz) VGS ±30 Power dissipation, TC = 25°C Ptot 38 W Operating and storage temperature Tj , Tstg -55... +150 °C
2008-04-07Rev. 2.5 Page 2 SPU03N60S5 SPD03N60S5 Maximum Ratings Parameter Symbol Value Unit Drain Source voltage slope VDS = 480 V, ID = 3.2 A, Tj = 125 °C dv/dt 20 V/ns Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Thermal resistance, junction - case RthJC - - 3.3 K/W Thermal resistance, junction - ambient, leaded RthJA - - 75 SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 2) RthJA Soldering temperature, *) 1.6 mm (0.063 in.) from case for 10s Tsold - - 260 °C Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA 600 - - V Drain-Source avalanche breakdown voltage V(BR)DS VGS=0V, ID=3.2A - 700 - Gate threshold voltage VGS(th) ID=135µΑ, VGS=VDS 3.5 4.5 5.5 Zero gate voltage drain current IDSS VDS=600V, VGS=0V, Tj=25°C, Tj=150°C 0.5 µA Gate-source leakage current IGSS VGS=20V, VDS=0V - - 100 nA Drain-source on-state resistance RDS(on) VGS=10V, ID=2A, Tj=25°C Tj=150°C 1.26 3.4 1.4 Ω *) TO252: reflow soldering, MSL3; TO251: wavesoldering
2008-04-07Rev. 2.5 Page 3 SPU03N60S5 SPD03N60S5 Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Characteristics Transconductance gfs VDS≥2*ID*RDS(on)max, ID=2A - 1.8 - S Input capacitance Ciss VGS=0V, VDS=25V, f=1MHz - 420 - pF Output capacitance Coss - 150 - Reverse transfer capacitance Crss - 3.6 - Turn-on delay time td(on) VDD=350V, VGS=0/10V, ID=3.2A, RG=20Ω - 35 - ns Rise time tr - 25 - Turn-off delay time td(off) - 40 - Fall time tf - 15 22.5 Gate Charge Characteristics Gate to source charge Qgs VDD=350V, ID=3.2A - 3.5 - nC Gate to drain charge Qgd - 7 - Gate charge total Qg VDD=350V, ID=3.2A, VGS=0 to 10V - 12.4 16 Gate plateau voltage V(plateau) VDD=350V, ID=3.2A - 8 - V 1Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f. 2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air.
2008-04-07Rev. 2.5 Page 4 SPU03N60S5 SPD03N60S5 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Inverse diode continuous forward current IS TC=25°C - - 3.2 A Inverse diode direct current, pulsed ISM - - 5.7 Inverse diode forward voltage VSD VGS=0V, IF=IS - 1 1.2 V Reverse recovery time trr VR=350V, IF=IS , diF/dt=100A/µs - 1000 1700 ns Reverse recovery charge Qrr - 2.3 - µC Typical Transient Thermal Characteristics Symbol Value Unit Symbol Value Unit typ. typ. Thermal resistance Rth1 0.054 K/W Rth2 0.103 Rth3 0.178 Rth4 0.757 Rth5 0.682 Rth6 0.202 Thermal capacitance Cth1 0.00005232 Ws/K Cth2 0.0002034 Cth3 0.0002963 Cth4 0.0009103 Cth5 0.002084 Cth6 0.024 External HeatsinkTj Tcase Tamb Cth1 Cth2 Rth1 Rth,n Cth,n Ptot (t)
2008-04-07Rev. 2.5 Page 5 SPU03N60S5 SPD03N60S5
1 Power dissipation
Ptot = f (TC) 0 20 40 60 80 100 120 °C 160 TC W SPU03N60S5 Ptot
2 Safe operating area
ID = f ( VDS ) parameter : D = 0 , TC=25°C 10 0 10 1 10 2 10 3 V VDS -210 -110 010 110 A ID tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms DC
3 Transient thermal impedance
ZthJC = f (tp) parameter: D = tp/T 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 s tp -210 -110 010 110 K/WZthJC 4 Typ. output characteristic ID = f (VDS); Tj=25°C parameter: tp = 10 µs, VGS 0 5 10 15 V 25 VDS A ID 7.5V 8.5V 10V 6.5V 20V 12V
2008-04-07Rev. 2.5 Page 6 SPU03N60S5 SPD03N60S5
5 Drain-source on-state resistance
RDS(on) = f (Tj) parameter : ID = 2 A, VGS = 10 V -60 -20 20 60 100 °C 180 Tj Ω SPU03N60S5 RDS(on) typ 98% 6 Typ. transfer characteristics ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max parameter: tp = 10 µs 0 4 8 12 V 20 VGS A ID 7 Typ. gate charge VGS = f (QGate) parameter: ID = 3.2 A pulsed 0 2 4 6 8 10 12 14 16 nC 19 QGate V SPU03N60S5 VGS
0.2 VDS max
0.8 VDS max
8 Forward characteristics of body diode
IF = f (VSD) parameter: Tj , tp = 10 µs VSD -210 -110 010 110 A SPU03N60S5 IF Tj = 25 °C typ Tj = 25 °C (98%) Tj = 150 °C typ Tj = 150 °C (98%)
2008-04-07Rev. 2.5 Page 7 SPU03N60S5 SPD03N60S5
9 Avalanche SOA
IAR = f (tAR) par.: Tj ≤ 150 °C 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 4 µs tAR 0.5 1.5 2.5 A 3.5 IAR Tj(START)=25°C Tj(START)=125°C
10 Avalanche energy
EAS = f (Tj) par.: ID = 2.4 A, VDD = 50 V 20 40 60 80 100 120 °C 160 Tj mJ 120 EAS
11 Drain-source breakdown voltage
V(BR)DSS = f (Tj) -60 -20 20 60 100 °C 180 Tj 540 560 580 600 620 640 660 680 V 720 SPU03N60S5 V(BR)DSS 12 Typ. capacitances C = f (VDS) parameter: VGS=0V, f=1 MHz 0 10 20 30 40 50 60 70 80 V 100 VDS 010 110 210 310 410 pF C Ciss Coss Crss
2008-04-07Rev. 2.5 Page 8 SPU03N60S5 SPD03N60S5 Definition of diodes switching characteristics
2008-04-07Rev. 2.5 Page 9 SPU03N60S5 SPD03N60S5 PG-TO252-3-1, PG-TO252-3-11, PG-TO252-3-21 (D-PAK)
2008-04-07Rev. 2.5 Page 10 SPU03N60S5 SPD03N60S5 PG-TO251-3-1, PG-TO251-3-21 (I-PAK)
2008-04-07Rev. 2.5 Page 11 SPU03N60S5 SPD03N60S5