SPT5130 SSDI | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
Solid State Devices Incorporated 50 AMP NPN
14830 Valley View Avenue
La Mirada, California 90638 POWER SWITCHING TRANSISTOR Telephone (213) 921-9660 TWX-910-583-4807 * Fast Switching 500 ns max, * Popular 10-63 case MAXIMUM RATINGS Jedec TO-63 case cd a ; ' $ Tes [esecument t tia’ Total Device Dissipation @Tp=75 °C ! ‘| Operating and Storage Junction TyT ecapen: ied stow | © | Se 109 wos = | THERMAL CHARACTERISTICS a-uw-ze a ;
ELECTRICAL CHARACTERISTICS
[Characteristic | Fig. Now| Symbot | min [max [unit | OFF CHARACTERISTICS Collectar-Emitter Sustaining Voltage* BV cE Q(sus)* Ve (ig® 50 mAdc,Ig= Q ) 2 Collector Cutoff Current 'ceo 50 vu Adc oe" 50 VévtgzQ ) Collector Cutoff Current \\oex 50 «| U Ade (Vo_* 100 Vdc, Vegiogs) = 1.5 Vee) Collector Cutoff Current ‘ego (Veg* Rated Vogete"O Emitter Cutoff Current (ge § Veotgt O ) 100
(Characteristic Fig Now] Symbol _[ Min [Max [Unit] ON CHARACTERISTICS OC Current Gain® ligt 40 Adc, Voge" 4 Vde) Mg" 20 Adc. Vog* 4 Vde) Collector-Emitter Saturation Voltage* Veeisat)> ligt 20 AdcIg* 2 Ade, Base-Emitter Saturation Voltage” Vge(sat)* Vde (Ig™ 20 Adc.tg™ 9 Ade) DYNAMIC CHARACTERISTICS Current-Gain-Bandwidth Product fy Ue" 1.0 Ade. Veg* 19 Vet yQ MHz) 30 Output Capacitance (Veg™ 10 Vde,tg= Of 9] MHz) SWITCHING CHARACTERISTICS Wee" 30. Vee ‘4 [Rie Time | Ic" 15 Ade.tyi* 1.2 mAdel ton Pal Weg 30 Véesig= 15 Ate Wy im Igy 7 tgg™ 1-2 made) tort y *Pulse Test: Pulse Width 300 us, Duty Cycle= 2 % —SSSeSSSSSSSSSeSeSSeSeSSSSSSSSSSSSSSSSSSSSSSSSSSSSSSSSSSSSSSSS SOLID STATE DEVICES, INC.