SPT5006 SSDI | Alldatasheet

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Technical content

NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: TR0113A DOC Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, Ca 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER’S DATA SHEET Part Number / Ordering Information 1/ └ Screening 2/ __ = Not Screened TX = TX Level TXV = TXV Level S = S Level Lead Bend 3/ 4/ __ = Straight Leads UB = Up Bend DB = Down Bend └ Package 3/ /61 = TO-61 /3 = TO-3 M = TO-254 S1 = SMD1 SPT5006 and SPT5008 Series

10 AMPS

100 Volts

Features:

  • Radiation Tolerant
  • Fast Switching, 100 ns Maximum t d
  • High Frequency, f T> 30MHz
  • BV CEO 80 Volts Minimum
  • High Linear Gain, Low Saturation Voltage
  • 200 oC Operating Temperature
  • Designed for Complementary Use With SPT5007 and SPT5009
  • TX, TXV, S-Level Screening Available. Consult Factory. Maximum Ratings Symbol Value Units Collector – Emitter Voltage VCEO 80 Volts Collector – Base Voltage VCBO 100 Volts Emitter – Base Voltage VEBO 6 Volts Collector Current IC 10 Amps Base Current IB 3 Amps Total Power Dissipation @ TC = 50ºC Derate Above 50ºC PD 100 0.667 Watts W/ºC Operating & Storage Temperature T J & TSTG -65 to +200 ºC Maximum Thermal Resistance (Junction to Case) R0JC 1.5 ºC/W TO-61 (/61) TO-3(/3) TO-254 (M) SMD1 (S1)

NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: TR0113A DOC Solid State Devices, Inc. Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SPT5006 and SPT5008 Series Electrical Characteristics Symbol Min Max Units Collector – Emitter Blocking Voltage * (IC = 200 mA) BVCEO 80 –– Volts Collector – Base Blocking Voltage (IC = 200 µA) BVCBO 100 –– Volts Emitter – Base Blocking Voltage (IE = 200 µA) BVEBO 6 –– Volts Collector Cutoff Current (VCE = 40 V) (VCE = 60 V) ICEO ICES 1.0 μA μA Collector Cutoff Current (VCE = 100 V) (VCE = 60 V, VBE = 2 V, TC = 150ºC) ICEX ICEX –– 1.0 500 mA μA Emitter Cutoff Current (VEB = 4 V) (VEB = 5.5 V) IEBO –– 1.0 1.0 μA mA (IC = 100 mA, VCE = 5 V) 2N5006 2N5008 (IC = 5 A, VCE = 5 V) 2N5006 2N5008 200 DC Current Gain * (IC = 10 A, VCE = 5 V)2N5006 2N5008 hFE Collector-Emitter Saturation Voltage * (IC = 5 A, IB = 500 mA) (IC = 10 A, IB = 500 mA) VCE (SAT) –– 0.9

1.5 Volts

Base-Emitter Saturation Voltage * Base – Emitter Voltage* C = 5 A, IB = 500 mA) (IC = 10 A, IB = 1 A) (VCE = 5 V, IC = 5 A) VBE (SAT) VBE (ON) 1.8 2.2 1.8 Volts Current Gain – Bandwidth Product (VCE = 5 V, IC = 0.5 A, f = 20 MHz)2N5006 2N5008 fT 30 –– MHz Output Capacitance VCB = 10 V, IE = 0 A, f = 1.0MHz Cob –– 275 pF Delay Time Rise Time t(on) td tr 100 100 ns ns Storage Time Fall Time (VCC = 40 V, IC = 2 A, VEB (OFF) = 3.0 V, IB1 = IB2 = 200 mA) (tp = 2μs) t(off) ts tf 2.0 200 μs ns NOTES: * Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2% 1/ For Ordering Information, Price, and Availability Contact Factory. 2/ Screening based on MIL-PRF-19500. Screening flows are available on request. 3/ For Package Outlines Contact Factory. 4/ Up and Down Bend Configurations are Available for ‘M’ (TO-254) Packages Only. 5/ Unless Otherwise Specified, All Electrical Characteristics @25ºC. Available Part Numbers: SPT5006/61, SPT5006/3, SPT5006M, SPT5006MUB, SPT5006MDB, SPT5006S1, SPT5008/61, SPT5008/3, SPT5008M, SPT5008MUB, SPT5008MDB, SPT5008S1 PIN ASSIGNMENT (Standard) Package Collector Emitter Base TO-61 (/61) Pin 3 Pin 1 Pin 2 TO-3 (/3) Case Pin 2 Pin 3 TO-254 (M) Pin 1 Pin 2 Pin 3 SMD1(S1) Pin 2 Pin 1 Pin 3