SPT165 SSDI | Alldatasheet

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SOLID STATE DEVICES, INC. SPT165 FEATURES: DATA SHEET #: TR0010A MAXIMUM RATINGS SYMBOL UNITS VALUE V EBO 3 VoltsEmitter-Base Voltage V CBO 45 VoltsCollector-Base Voltage IC 10Collector Current, TC #150oC Collector-Emitter Voltage V CEO 45 mAmps Volts oC mW mW/ oC oC/W

  • B V CEO 45V .
  • Very Low Leakage.
  • High Gain.
  • Stable Reference Voltage 0.002%/ oC from 0 to 70oC.
  • Isolated Case.
  • Hermetic, Metal Case with Glass Seals.
  • 150 oC Operating Temperature. TO-33 CASE OUTLINE: TO-33 10 mA

45 VOLTS

NPN (V REF ) TRANSISTOR Operating and Storage Temperature T J, T STG -55 to +150 250 Thermal Resistance, Junction to Case R 2JC 500 Total Device Dissipation @ TA = 25oC Derate above 25oC PD IB, IZ 6Base or Zener Current, TC #150oC mAmps DESIGNER'S DATA SHEET NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release.

14830 Valley View Blvd * La Mirada, Ca 90638

Phone: (562) 404-7855 * Fax: (562) 404-1773

SOLID STATE DEVICES, INC. SPT165 PRELIMINARY V45 -BV CEO Collector-Emitter Breakdown Voltage * (IC = 1.0mADC ) :A-1Collector Cutoff Current (VCB = 30VDC ) 10 120H FE DC Current Gain* (IC = 500:A DC , VCE = 3VDC ) V DC6.3 7.7V REF Reference Voltage * (VCE = 3VDC ) MIN MAXELECTRICAL CHARACTERISTICS SYMBOL UNITS *Pulse Test: Pulse Width = 300us, Duty Cycle = 2% ICBO Phone: (562) 404-7855 * Fax: (562) 404-1773