SPR85N80SG SECOS | Alldatasheet
Document overview
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Technical content
85A, 80V , R DS(O/glyph1197) 8mΩ /glyph1197-Ch Enhancement Mode Power MOSFET 29-Jun-2017 Rev. A Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RoHS Compliant Product A suffix of “-C” specifies halogen free
DESCRIPTION
The SPR85N80SG is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent R DS(ON) and gate charge for most of the synchronous buck converter applications. The SPR85N80SG meet the RoHS and Green Product with Function reliability approved.
FEATURES
/circle6 RDS(on) ≦8mΩ @V GS =10V /circle6 RDS(on) ≦11.1mΩ @V GS =4.5V /circle6 High speed power switching, Logic Level /circle6 Enhanced Body diode dv/dt capability /circle6 Enhanced Avalanche Ruggedness /circle6 100% UIS Tested, 100% Rg Tested /circle6 PR-8PP Package MARKING
PACKAGE INFORMATION
(T J=25 °C unless otherwise specified) Parameter Symbol Ratings Unit Drain-Source Voltage VDS 80 V Gate-Source Voltage VGS ±20 V TC =25°C 85 Continuous Drain Current (Silicon Limited) TC =100°C 60 Continuous Drain Current (Package Limited) TC =25°C ID A Pulsed Drain Current IDM 200 A Avalanche Energy, Single Pulse, @L=0.1mH TC =25°C E AS 20 mJ Power Dissipation T C =25°C P D 125 W Operating Junction and Storage Temperature Range TJ, T STG -55 ~ 150 °C Thermal Resistance Ratings Maximum Thermal Resistance Junction-Ambient R θJA 55 Maximum Thermal Resistance Junction-Case RθJC 1.5 °C / W 85N80SG /box4/box4/box4/box4 /box4/box4/box4/box4 /box4/box4/box4/box4 /box4/box4/box4/box4 Date Code PR-8PP A 4.9 5.1 G 0.8 1.0 B 5.7 5.9 H 0.254 Ref. C 5.95 6.2 I 4.0 Ref. D 1.27 BSC. J 3.4 Ref. E 0.35 0.49 K 0.6 Ref. F 0.1 0.2 L 1.4 Ref. G S S S D D D D
85A, 80V , R DS(O/glyph1197) 8mΩ /glyph1197-Ch Enhancement Mode Power MOSFET 29-Jun-2017 Rev. A Page 2 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (T J=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test conditions Drain-Source Breakdown Voltage BV DSS 80 - - V V GS=0, I D =250µA Gate Threshold Voltage V GS(th) 1 1.6 2.4 V V DS =V GS , I D =250µA Forward Transfer conductance g fs - 65 - S V DS =5V, I D =20A Gate-Source Leakage Current I GSS - - ±100 nA V GS =±20V TJ=25°C - - 1 Drain-Source Leakage Current TJ=100°C IDSS - - 100 µA V DS =80V, V GS =0 - 6.3 8 mΩ V GS =10V, I D =20A Static Drain-Source On-Resistance RDS(ON) - 8.7 11.1 mΩ V GS =4.5V, I D =20A Total Gate Charge Q g - 40 - V GS =10V Total Gate Charge Q g - 19 - V GS =4.5V Gate-Source Charge Q gs - 4.5 - Gate-Drain (“Miller”) Change Q gd - 7.5 - nC ID =20A VDD =40V VGS =10V Turn-on Delay Time T d(on) - 10 - Rise Time Tr - 6 - Turn-off Delay Time T d(off) - 32 - Fall Time Tf - 8 - nS VDD =40V ID =20A VGS =10V RG =10Ω Input Capacitance C iss - 2200 - Output Capacitance C oss - 247 - Reverse Transfer Capacitance C rss - 12.5 - pF VGS =0 VDS =40V f=1.0MHz Source-Drain Diode Forward On Voltage V SD - 0.9 1.2 V I F=20A, V GS =0 Reverse Recovery Time T rr - 30 - nS Reverse Recovery Charge Q rr - 90 - nC VR=40V, I F=20A, dl/dt=400A/µs
85A, 80V , R DS(O/glyph1197) 8mΩ /glyph1197-Ch Enhancement Mode Power MOSFET 29-Jun-2017 Rev. A Page 3 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. TYPICAL CHARACTERISTICS CURVE
85A, 80V , R DS(O/glyph1197) 8mΩ /glyph1197-Ch Enhancement Mode Power MOSFET 29-Jun-2017 Rev. A Page 4 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. TYPICAL CHARACTERISTICS CURVE