SPR40N06 SECOS | Alldatasheet

Document overview

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Technical content

40A , 60V , R DS(ON) 12 m ΩΩ ΩΩ N-Channel Enhancement Mode Power MOSFET 13-Jun-2014 Rev.A Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free

DESCRIPTION

The SPR40N06 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The PR-8PP package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.

FEATURES

/circle6 Lower Gate Charge /circle6 Simple Drive Requirement /circle6 Fast Switching Characteristic MARKING

PACKAGE INFORMATION

(T A=25° C unless otherwise specified) Parameter Symbol Rating Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V TC =25° C 40 Continuous Drain Current 1@V GS =10V TC =100° C ID A Pulsed Drain Current 2 T C =25° C I DM 110 A Single Pulse Avalanche Energy 3 EAS 50 mJ Avalanche Current IAS 30 A Total Power Dissipation 4 T C =25° C P D 69 W Operating Junction & Storage Temperature T J, T STG -55~150 ° C Thermal Resistance Rating Thermal Resistance Junction-Ambient 1(Max). R θJA 36 ° C / W Thermal Resistance Junction-Case 1(Max). R θJC 1.8 ° C / W 40N06 /box4/box4/box4 /box4/box4/box4 /box4/box4/box4 /box4/box4/box4 /box4/box4 /box4/box4 /box4/box4 /box4/box4 = Date code PR-8PP A 4.9 5.1 G 0.8 1.0 B 5.7 5.9 H 0.254 Ref. C 5.95 6.2 I 4.0 Ref. D 1.27 BSC. J 3.4 Ref. E 0.35 0.49 K 0.6 Ref. F 0.1 0.2 L 1.4 Ref. G S S S D D D D

40A , 60V , R DS(ON) 12 m ΩΩ ΩΩ N-Channel Enhancement Mode Power MOSFET 13-Jun-2014 Rev.A Page 2 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS

(T J = 25° C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Teat Conditions Static Drain-Source Breakdown Voltage BV DSS 60 - - V V GS =0, I D = 250uA Gate-Threshold Voltage V GS(th) 2 - 4 V V DS =V GS , I D =250uA Gate-Source Leakage Current I GSS - - ±100 nA V GS = ±20V - - 1 V DS =60V, V GS =0, TJ=25° C Drain-Source Leakage Current I DSS - - 5 uA VDS =60V, V GS =0, TJ=55° C Static Drain-Source On-Resistance 2 R DS(ON) - - 12 m Ω V GS =10V, I D =20A Gate Resistance R g - - 3.5 Ω f =1.0MHz Total Gate Charge Q g - 20 - Gate-Source Charge Q gs - 5 - Gate-Drain Change Q gd - 1.8 - nC ID =20A VDS =30V VGS =10V Turn-on Delay Time 2 T d(on) - 6 - Rise Time Tr - 2.5 - Turn-off Delay Time T d(off) - 25 - Fall Time Tf - 2.5 - nS VDD =30V VGS =10V R L=1.5 Ω R G =3Ω Input Capacitance C iss - 1543 - Output Capacitance C oss - 165 - Reverse Transfer Capacitance C rss - 9 - pF VGS =0 VDS =30V f =1.0MHz Guaranteed Avalanche Characteristics Single Pulse Avalanche Energy 5 EAS 22 - - mJ V D =25V, L=0.1mH, IAS =20A Source-Drain Diode Diode Forward Voltage 2 V SD - - 1.3 V I S=20A, V GS =0 Continuous Source Current 1,6 I S - - 40 A Pulsed Source Current 2,6 I SM - - 110 A VD =V G =0, Force Current Reverse Recovery Time T rr - 18 - nS Reverse Recovery Charge Q rr - 65 - nC IF=20A, dl/dt=100A/ µS, TJ=25° C Note: 1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper , ≦10sec , 125 ℃/W at steady state 2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3. The EAS data shows Max. rating . The test condition is V DD =25V,V GS =10V,L=0.1mH,I AS =30A 4. The power dissipation is limited by 150° C junction temperature 5. The Min. value is 100% EAS tested guarantee. 6. The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.

40A , 60V , R DS(ON) 12 m ΩΩ ΩΩ N-Channel Enhancement Mode Power MOSFET 13-Jun-2014 Rev.A Page 3 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES

40A , 60V , R DS(ON) 12 m ΩΩ ΩΩ N-Channel Enhancement Mode Power MOSFET 13-Jun-2014 Rev.A Page 4 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES