SPR35P03 SECOS | Alldatasheet

Document overview

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Technical content

-35A , -30V , R DS(ON) 27 m ΩΩ ΩΩ P-Channel Enhancement Mode Power MOSFET 19-May-2014 Rev.A Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free

DESCRIPTION

The SPR35P03 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The PR-8PP package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.

FEATURES

/circle6 Lower Gate Charge /circle6 Simple Drive Requirement /circle6 Fast Switching Characteristic MARKING

PACKAGE INFORMATION

(T A=25° C unless otherwise specified) Parameter Symbol Rating Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±20 V TC =25° C -35 A TC =100° C -22 A TA=25° C -8.5 A Continuous Drain Current 1@V GS =10V TA=70° C ID -6.8 A Pulsed Drain Current 2 IDM -70 A Single Pulse Avalanche Energy 3 EAS 135 mJ Avalanche Current IAS -30 A Total Power Dissipation 4 T C =25° C P D 37.5 W Operating Junction & Storage Temperature T J, T STG -55~150 ° C Thermal Resistance Rating Thermal Resistance Junction-Ambient 1(Max). R θJA 62 ° C / W Thermal Resistance Junction-Case 1(Max). R θJC 3.33 ° C / W 35P03 /box4/box4/box4 /box4/box4/box4 /box4/box4/box4 /box4/box4/box4 /box4/box4 /box4/box4 /box4/box4 /box4/box4 = Date code PR-8PP A 4.9 5.1 G 0.8 1.0 B 5.7 5.9 H 0.254 Ref. C 5.95 6.2 I 4.0 Ref. D 1.27 BSC. J 3.4 Ref. E 0.35 0.49 K 0.6 Ref. F 0.1 0.2 L 1.4 Ref.

-35A , -30V , R DS(ON) 27 m ΩΩ ΩΩ P-Channel Enhancement Mode Power MOSFET 19-May-2014 Rev.A Page 2 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (T J = 25° C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Teat Conditions Static Drain-Source Breakdown Voltage BV DSS -30 - - V V GS =0, I D = -250 µA Gate-Threshold Voltage V GS(th) -1 - -2.5 V V DS =V GS , I D = -250 µA Forward Tranconductance g fs - 5 - S V DS = -5V, I D = -10A Gate-Source Leakage Current I GSS - - ±100 nA V GS = ±20V - - -1 V DS = -24V, V GS =0, TJ=25° C Drain-Source Leakage Current I DSS - - -5 µA VDS = -24V, V GS =0, TJ=55° C - - 27 V GS = -10V, I D = -15A Static Drain-Source On-Resistance 2 R DS(ON) - - 35 m Ω VGS = -4.5V, I D = -10A Gate Resistance R g - 18 26 Ω f =1.0MHz Total Gate Charge Q g - 12.5 - Gate-Source Charge Q gs - 5.4 - Gate-Drain (“Miller”) Change Q gd - 5 - nC ID = -15A VDS = -15V VGS = -4.5V Turn-on Delay Time 2 T d(on) - 4.4 - Rise Time Tr - 11.2 - Turn-off Delay Time T d(off) - 34 - Fall Time Tf - 18 - nS VDD = -15V ID = -15A VGS = -10V R G =3.3 Ω Input Capacitance C iss - 1345 - Output Capacitance C oss - 194 - Reverse Transfer Capacitance C rss - 158 - pF VGS =0 VDS = -15V f =1.0MHz Guaranteed Avalanche Characteristics Single Pulse Avalanche Energy 5 EAS 33.7 - - mJ V DD = -25V, L=0.1mH, IAS = -15A Source-Drain Diode Diode Forward Voltage 2 V SD - - -1.2 V I S= -1A, V GS =0V Continuous Source Current 1,6 I S - - -35 A Pulsed Source Current 2,6 I SM - - -70 A VG =V D =0, Force Current Reverse Recovery Time t rr - 12.4 - nS Reverse Recovery Charge Q rr - 5 - nC IF= -15A, dl/dt=100A/ µs, TJ=25° C Note: 1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper , ≦10sec , 125 ℃/W at steady state 2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3. The EAS data shows Max. rating . The test condition is V DD = -25V,V GS = -10V,L=0.1mH,I AS = -30A 4. The power dissipation is limited by 150° C junction temperature 5. The Min. value is 100% EAS tested guarantee. 6. The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.

-35A , -30V , R DS(ON) 27 m ΩΩ ΩΩ P-Channel Enhancement Mode Power MOSFET 19-May-2014 Rev.A Page 3 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES

-35A , -30V , R DS(ON) 27 m ΩΩ ΩΩ P-Channel Enhancement Mode Power MOSFET 19-May-2014 Rev.A Page 4 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES