SPR25P10-C SECOS | Alldatasheet
Document overview
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Technical content
-25A, -100V , R DS(O/glyph1197) 50mΩ P-Channel Enhancement Mode Power MOSFET 30-Jan-2018 Rev. A Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The SPR25P10-C is the highest performance trench P-Ch MµSFETs with extreme high cell density, which provide excellent R DS(µN) and gate charge for most of the synchronous buck converter applications. The SPR25P10-C meet the RoHS and Green Product requirement with full function reliability approved.
FEATURES
/circle6 Advanced High Cell Density Trench Technology /circle6 Super Low Gate Charge MARKING
PACKAGE INFORMATION
Parameter Symbol Ratings Unit Drain-Source Voltage VDS -100 V Gate-Source Voltage VGS ±20 V TC=25°C -25 TC=100°C -17.5 TA=25°C -4.8 Continuous Drain Current 1 , @VGS = -10V TA=70°C ID -3.8 A Pulsed Drain Current 3 IDM -70 A Total Power Dissipation T C=25°C P D 62.5 W µperating Junction & Storage Temperature TJ, T STG -55~175 °C Thermal Resistance Ratings Thermal Resistance Junction-Case 1 R θJC 2.4 Thermal Resistance Junction-Ambient 1 65 Thermal Resistance Junction-Ambient 2 RθJA 135 °C/W Part Number Type SPR25P10-C Lead (Pb)-free and Halogen-free
25 P10
/box4/box4/box4 /box4/box4/box4 /box4/box4/box4 /box4/box4/box4 /box4/box4 /box4/box4 /box4/box4 /box4/box4 = Date code PR-8PP B E F G g A e b θ D C d A 0.9 1.1 θ 0° 12 ° B 4.9 5.1 b 0.33 0.51 C 0.2 0.3 d 1.27 BSC D 3.81 4 e 5.7 5.9 E 5.95 6.2 g 1.1 1.4 F 0.1 0.2 G 3.81 4
-25A, -100V , R DS(O/glyph1197) 50mΩ P-Channel Enhancement Mode Power MOSFET 30-Jan-2018 Rev. A Page 2 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (T J=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Drain-Source Breakdown Voltage BV DSS -100 - - V V GS =0, I D = -250uA Gate Threshold Voltage V GS(th) -1 - -2.5 V V DS =V GS , I D = -250uA Forward Transconductance g fs - 23 - S V DS = -15V, I D = -10A Gate-Source Leakage Current I GSS - - ±100 nA V GS = ±20V TJ=25°C - - -1 V DS = -80V, V GS =0 Drain-Source Leakage Current TJ=70°C IDSS - - -10 uA VDS = -80V, V GS =0 - - 50 V GS = -10V, I D = -15A Static Drain-Source µn-Resistance 4 R DS(µN) - - 60 mΩ VGS = -4.5V, I D = -12A Total Gate Charge Q g - 40.7 - Gate-Source Charge Q gs - 7.2 - Gate-Drain Change Q gd - 4 - nC ID = -15A VDS = -80V VGS = -10V Turn-on Delay Time T d(on) - 13.4 - Rise Time T r - 23.6 - Turn-off Delay Time T d(off) - 68.6 - Fall Time Tf - 21.2 - nS VDD = -50V ID = -15A VGS = -10V RG=2.7Ω Input Capacitance C iss - 2191 - µutput Capacitance C oss - 210 - Reverse Transfer Capacitance Crss - 81 - pF VGS =0 VDS = -25V f=1MHz Source-Drain Diode Diode Forward Voltage 4 V SD - - -1.2 V I S= -2A, V GS =0 Continuous Source Current 1 I S - - -25 Pulsed Source Current 3 I SM - - -70 A Reverse Recovery Time t rr - 28.4 - nS Reverse Recovery Charge Q rr - 40.9 - nC IF= -15A, dl/dt=100A/µs, TJ=25°C Notes: 1. Surface mounted on a 1 inch 2 FR-4 board with 2µZ copper. 2. When mounted on Min. Copper pad. 3. Pulse width limited by maximum junction temperature. 4. The data tested by pulsed, pulse width ≦300µs, duty cycle ≦2%.
-25A, -100V , R DS(O/glyph1197) 50mΩ P-Channel Enhancement Mode Power MOSFET 30-Jan-2018 Rev. A Page 3 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES
-25A, -100V , R DS(O/glyph1197) 50mΩ P-Channel Enhancement Mode Power MOSFET 30-Jan-2018 Rev. A Page 4 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES