SPR17P02 SECOS | Alldatasheet
Document overview
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Technical content
-17A , -20V , R DS(O/glyph1197) 11mΩΩ ΩΩ P-Channel Enhancement Mode Power MOSFET 18-Jul-2017 Rev. A Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The SPR17P02 is the highest performance trench P-ch MOSFETs with extreme high cell density, which provide excellent R DS(ON) and gate charge for most of the synchronous buck converter applications. The SPR17P02 meet the RoHS and Green Product requirement with full function reliability approved.
FEATURES
/circle6 RDS(on) ≦11mΩ @V GS = -4.5V /circle6 RDS(on) 1≦ 7mΩ @V GS = -2.5V /circle6 Advanced High Cell Density Technology /circle6 Super Low Gate Charge /circle6 Green Device Available MARKING
PACKAGE INFORMATION
Parameter Symbol Rating Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ±12 V TA=25°C -17 Continuous Drain Current 1@V GS =10V TA=70°C ID -13.6 A Pulsed Drain Current 3 IDM -60 A TA=25°C 5 Total Power Dissipation TA=70°C PD 3.2 W Operating Junction & Storage Temperature TJ, T STG -55~150 °C Thermal Resistance Rating t≦10s, 25 Thermal Resistance Junction-Ambient 1 Steady State, 62 Thermal Resistance Junction-Ambient 2 RθJA 125 Thermal Resistance Junction-Case 1 R θJC 3.1 °C / W Package MPQ Leader Size PR-8PP 3K 13 inch 17P02 /box4/box4/box4 /box4 /box4/box4 /box4/box4 = Date code PR-8PP B E F G g A e b θ D C d A 0.9 1.1 θ 0 ° 12 ° B 4.9 5.1 b 0.33 0.51 C 0.2 0.3 d 1.27 BSC D 3.81 4 e 5.7 5.9 E 5.95 6.2 g 1.1 1.4 F 0.1 0.2 G 3.81 4
-17A , -20V , R DS(O/glyph1197) 11mΩΩ ΩΩ P-Channel Enhancement Mode Power MOSFET 18-Jul-2017 Rev. A Page 2 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
ELECTRICAL CHARACTERISTICS
(T J=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Teat Conditions Drain-Source Breakdown Voltage BV DSS -20 - - V V GS =0, I D = -250µA Gate-Threshold Voltage V GS(th) -0.45 - -1.5 V V DS =V GS , I D = -250µA Gate-Source Leakage Current I GSS - - ±100 nA V GS =±12V - - -1 V DS = -16V, V GS =0, T J=25°C Drain-Source Leakage Current I DSS - - -10 mA VDS = -16V, V GS =0, T J=125°C - 8.8 11 V GS = -4.5V, I D = -14A Static Drain-Source On-Resistance 4 R DS(ON) - 12.8 17 mΩ VGS = -2.5V, I D = -10A Total Gate Charge Q g - 35 - Gate-Source Charge Q gs - 8.3 - Gate-Drain Change Q gd - 11 - nC ID = -15A VDS = -10V VGS = -4.5V Turn-on Delay Time T d(on) - 42 - Rise Time Tr - 23 - Turn-off Delay Time T d(off) - 136 - Fall Time Tf - 74 - nS VDD = -10V ID = -1A VGS = -4.5V RG =6Ω Input Capacitance C iss - 4107 - Output Capacitance C oss - 415 - Reverse Transfer Capacitance C rss - 368 - pF VGS =0 VDS = -10V f=1.0MHz Source-Drain Diode Continuous Source Current 1 I S - - -11 A Pulsed Source Current 3 I SM - - -44 A Diode Forward Voltage 4 V SD - - -1 V I S= -1.5A, V GS =0V, T J=25°C Reverse Recovery Time t rr - 50 - nS Reverse Recovery Charge Q rr - 36 - nC IF= -2.3A, dl/dt=100A/µs, TJ=25°C Notes: 1. The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper 2. When mounted on Min. copper pad. 3. The power dissipation is limited by 150°C junction temperature 4. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
-17A , -20V , R DS(O/glyph1197) 11mΩΩ ΩΩ P-Channel Enhancement Mode Power MOSFET 18-Jul-2017 Rev. A Page 3 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES
-17A , -20V , R DS(O/glyph1197) 11mΩΩ ΩΩ P-Channel Enhancement Mode Power MOSFET 18-Jul-2017 Rev. A Page 4 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES