SPN8822ATS8RG VBSEMI | Alldatasheet

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  • Halogen-free Option Available  TrenchFET ® Power MOSFETs PRODUCT SUMMARY VDS (V) RDS(on) (Ω)I D (A) 0.022 at VGS = 4.5 V 6.6 0.032 at VGS = 2.5 V 5.5 D S 1 S 1 G 1 D S 2 S 2 G 2 TSSOP-8 T op V i e w Notes: a. Surface Mounted on FR4 board, t ≤ 10 s. * Pb con taining terminations are not RoHS compliant, exemptions may apply. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady Sta t e Unit Drain-Source Voltage VDS 25 V Gate-Source Voltage VGS ± 12 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C ID 6.6 5.2 A TA = 70 °C 5.5 3.5 Pulsed Drain Current IDM 30 Continuous Source Current (Diode Conduction)a IS 1.5 1.0 Maximum Power Dissipationa TA = 25 °C PD 1.5 1.0 WTA = 70 °C 0.96 0.64 Operating Junction and Stor age Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typ. Max. Unit Maximum Junction-to-Ambienta t ≤ 10 s RthJA 72 83 °C/WSteady State 100 120 Maximum Junction-to-Foot (Drain) Stea dy State RthJF 55 70 Available Pb-free RoHS* COMPLIANT D D Dual N-Channel 25-V (D-S) MOSFET E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw SPN8822ATS8RG A ll data sheet.com

Notes: a. For design aid only; not subject to production t esting. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. Stresses beyond those listed under “Abso lute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C, un less otherwise noted SPECIFICATIONS TJ = 25 °C, unless oth erwise noted Parameter Symbol Test Cond itions Min. Typ. a Max. Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 0.5 1.0 V Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 4.5 V ± 200 nA Zero Gate V oltage Drain Current IDSS VDS = 25 V, VGS = 0 V 1 µAVDS = 25 V, VGS = 0 V, TJ = 70 °C 25 On-State Drain Currentb ID(on) VDS ≤ 5 V, VGS = 4.5 V 30 A Drain-Source On-State Resistanceb RDS(on) VGS = 4.5 V, ID = 6.5 A 0.022 0.027 ΩVGS = 2.5 V, ID = 5.5 A 0.032 0.040 Forward Transconductanceb gfs VDS = 10 V, ID = 6.5 A 30 S Diode Forward Voltageb VSD IS = 1.5 A, VGS = 0 V 0.71 1.2 V Dynamica Total Gate Charge Qg VDS = 10 V, VGS = 4.5 V, ID = 6.5 A 12 18 nCGate-Source Charge Qgs 2.2 Gate-Drain Charge Qgd 3.6 Tur n-On Dela y Time td(on) VDD = 10 V, RL = 10 Ω ID ≅ 1 A, VGEN = 4.5 V, RG = 6 Ω 245 365 ns Rise Time tr 330 495 Turn-Off Delay Time td(off) 860 1300 Fall Time tf 510 765 Gate-Current vs. Gate-Source Voltage 0 3 6 9 12 15 18 - Gate Current (mA)IGSS VGS - Gate-to-Source Voltage (V) Gate Current vs. Gate-Source Voltage 0369 1 2 15 0.01 100 10000 T J = 25 °C - Gate Current (A) I GSS 0.1 1000 V GS - Gate-to-Source Voltage (V) T J = 150 °C E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw SPN8822ATS8RG A ll data sheet.com

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Output Characteristics On-Resistance vs. Drain Curren t On-Resistance vs. Junction Temperature 012345 VGS = 5 thru 3 V 2 V 2.5 V VDS - Drain-to-Source Voltage (V) - Drain Current (A)ID 0.02 0.03 0.04 0.05 0.06 0.07 0 5 10 15 20 25 30 VGS = 4.5 V VGS = 2.5 V - On-Resistance (Ω)RDS(on) ID - Drain Current (A) 0.6 0.8 1.0 1.2 1.4 1.6 - 50 - 25 0 2 5 5 0 7 5 100 125 150 V GS = 4.5 V I D = 6.5 A TJ - Junction Temperature (°C) (Normalized) - On-ResistanceRDS(on) Transfer Characteristics Gate Charge Source -Drain Diode Forward Voltage T C = 125 °C - 55 °C VGS - Gate-to-Source Voltage (V) - Drain Current (A)ID 25 °C 0 3 6 9 12 15 V DS = 10 V I D = 6.5 A - Gate-to-Source Voltage (V) Qg - Total Gate Charge (nC) VGS 1.2 1.5 0.1 0 0.3 0.6 0.9 T J = 25 °C T J = 150 °C VSD - Source-to-Drain Voltage (V) - Source Current (A) IS E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw SPN8822ATS8RG A ll data sheet.com

TYPICAL CHARACTERISTICS 25 °C, unless othe rwise noted On-Resistance vs. Gate-to-Source Voltage Single Pulse Power 0.00 0.01 0.02 0.03 0.04 0.05 0 123456 ID = 6.5 A - On-Resistance (Ω)R DS(on) VGS - Gate-to-Source Voltage (V) 0.001 160 200 100.1 Power (W) Time (s) 120 0.01 Threshold Vol tage Safe Operating Area, Junction-to-Case - 0.6 - 0.4 - 0.2 0.0 0.2 0.4 - 50 - 25 0 2 5 5 0 7 5 100 125 150 I D = 250 µA Variance (V)VGS(th) TJ - Temperature (°C) 100 0.1 1 10 100 0.01 10 1 ms - Drain Current (A)ID 0.1 Limited by RDS(on)* T C = 25 °C Single Pulse 10 ms 100 ms DC 10 s 1 s VDS - Drain-to-Source Voltage (V) *V GS > minimum VGS at which RDS(on) is specified Normalized Thermal Transient Impedance, Jun ction-to-Ambient 0.1 0.01 10 -4 10 -3 10 -2 10 -1 1 100 600 Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 1. Duty Cycle, D = 2. Per Unit Base = R th J A = 11 5 °C/W 3. T JM - T A = P DM Z th J A (t ) t 1 t 2 t 1 t 2 Notes: 4. Surface Mounted P DM Square Wave Pulse Duration (s) Normalized Ef fective T ransient Thermal Impedance E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw SPN8822ATS8RG A ll data sheet.com

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Normalized Thermal Transient Impeda nce, Junction-to-Foot 10-3 10-2 11 010-110-4 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Square Wave Pulse Duration (s) Normalized Effective Transient Thermal Impedance E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw SPN8822ATS8RG A ll data sheet.com

E C R 0.10 (4 Corners) B R 0.10 Corners) A D L /C0111K1 0.25 (Gage Plane) e /C0084/C0083/C0083/C0079/C0080/C0058/C0032/C0032/C0032/C0032/C0056/C0262/C0076/C0069/C0065/C0068 JEDEC Part Number: MO-153 /C0077/C0073/C0076/C0076/C0073/C0077/C0069/C0084/C0069/C0082/C0083 Dim Min Nom Max A – – 1.20 A 1 0.05 0.10 0.15 A 2 0.80 1.00 1.05 B 0.19 0.28 0.30 C – 0.127 – D 2.90 3.00 3.10 E 6.20 6.40 6.60 E1 4.30 4.40 4.50 e – 0.65 – L 0.45 0.60 0.75 L1 0.90 1.00 1.10 Y – – 0.10 /C0111K1 0/C0095 3/C0095 6/C0095 ECN: S-03946—Rev. G, 09-Jul-01 DWG: 5844 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw SPN8822ATS8RG A ll data sheet.com

RECOMMENDED MINIMUM PADS FOR TSSOP-8 0.262 (6.655) Recommended Minimum Pads Dimensions in Inches/(mm) 0.092 (2.337) 0.182 (4.623) 0.040 (1.016) 0.026 (0.660) 0.014 (0.356) 0.012 (0.305) Return to Index Return to Index E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw SPN8822ATS8RG A ll data sheet.com

All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.tw) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. To the maximum extent permitted by applicable law on Taiwan VBsemi relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability, including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties, including a particular purpose, non-infringement and merchantability guarantee. Statement on certain types of applications are based on knowledge of the product is often used in a typical application of the general product VBsemi Taiwan demand that the Taiwan VBsemi of. Statement on whether the product is suitable for a particular application is non-binding. It is the customer's responsibility to verify specific product features in the products described in the specification is appropriate for use in a particular application. Parameter data sheets and technical specifications can be provided may vary depending on the application and performance over time. All operating parameters, including typical parameters must be made by customer's technical experts validated for each customer application. Product specifications do not expand or modify Taiwan VBsemi purchasing terms and conditions, including but not limited to warranty herein. Unless expressly stated in writing, Taiwan VBsemi products are not intended for use in medical, life saving, or life sustaining applications or any other application. Wherein VBsemi product failure could lead to personal injury or death, use or sale of products used in Taiwan VBsemi such applications using client did not express their own risk. Contact your authorized Taiwan VBsemi people who are related to product design applications and other terms and conditions in writing. The information provided in this document and the company's products without a license, express or implied, by estoppel or otherwise, to any intellectual property rights granted to the VBsemi act or document. Product names and trademarks referred to herein are trademarks of their respective representatives will be all. Material Category Policy Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be RoHS compliant and meets the definition of restrictions under Directive of the European Parliament 2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and electronic equipment (EEE) - modification, unless otherwise specified as inconsistent.(www.VBsemi.tw) Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive 2011/65 /. Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products conform to confirm compliance with IEC 61249-2-21 standard level JS709A. E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw SPN8822ATS8RG A ll data sheet.com