SPN6099T220TGB VBSEMI | Alldatasheet
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Technical content
FEATURES
- Halogen-free According to IEC 61249-2-21 Defini tion
- T r e n c h F E T® Power MOSFET
- Pac kage with Low Thermal Resistance
- 1 0 0 % Rg and UIS Tested
- Compliant to RoHS Directive 2002/95/EC Notes a. Pa ckage limited. b. Pulse test; pulse width 300 μs, duty cycle 2 %. c. When mounted on 1" squa re PCB (FR-4 material). d. Parametric verification ongoing. PRODUCT SUMMARY VDS (V) 60 RDS(on) () at VGS = 10 V 0.0035 RDS(on) () at VGS = 4.5 V 0.0090 ID (A) 210 Configuration Single D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unles s otherwise noted) PARAMETER SY MBOL LIMIT U NIT Drain-Source Voltage VDS 60 V Gate-Sourc e Voltage VGS ± 20 Continuous Drain Current TC = 25 °C ID 210 A TC = 125 °C 120 Continuous Source Current (Diode Conduction)a IS 120 Pulsed Dr ain Currentb IDM 48 0 Single Pulse Avalanche Current L = 0.1 mH IAS 75 Single Pul se Avalanche Energy EAS 281 mJ Maximum P ower Dissipationb TC = 25 °C PD 375 W TC = 125 °C 125 Oper ating Junction and Storage Temperature Range TJ, Tstg - 55 to + 175 °C THERMAL RESISTANCE RA TINGS PARAMETER SYMBOL LIMIT UNIT Junction-to-Ambient P CB Mountc RthJA 40 °C/W Junction-t o-Case (Drain) RthJC 0.4 a a N-Channel 60 V (D-S) MOSFET T O-220AB Top View GD S E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw SPN6099T220TGB A ll data sheet.com
Pulse test; pulse width 300 μs, duty cycle 2 %. b. Guaranteed by design , not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute M aximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (TC = 25 °C, unles s otherwise noted) PARAMETER SYMBOL TES T CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Br eakdown Voltage VDS VGS = 0, ID = 250 μA 60 - - V Gate-S ource Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 2.0 - 3.5 Gate-Sourc e Leakage IGSS V DS = 0 V, VGS = ± 20 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VGS = 0 V VDS = 60 V - - 1.0 μA VGS = 0 V V DS = 60 V, TJ = 125 °C - - 50 VGS = 0 V V DS = 60 V, TJ = 175 °C - - 350 On-State Drain Currenta I D(on) V GS = 10 V VDS5 V 120 - - A D rain-Source On-State Resistancea R DS(on) VGS = 10 V ID = 30 A - 0.0035 - VGS = 10 V I D = 30 A, TJ = 125 °C - 0.0060 - VGS = 10 V I D = 30 A, TJ = 175 °C - 0.0080 - VGS = 4.5 V ID = 20 A - 0.0090 - Forward Trans conductanceb gfs VDS = 15 V, ID = 30 A - 109 - S Dynamicb Input Capacitance Ciss VGS = 0 V V DS = 25 V, f = 1 MHz - 8600 - pF Output Capacitance Coss Reverse Tr ansfer Capacitance Crss Total Gate Chargec Qg VGS = 10 V V DS = 30 V, ID = 110 A - 180 nC Gate-Source Chargec Qgs - 24.7 - Gate-Drain Chargec Qgd - 50.4 - Gate Resistance Rg f = 1 MHz 0.5 1.1 1.6 Turn -On Delay Timec td(on) VDD = 30 V, RL = 0.27 ID 110 A, VGEN = 10 V, Rg = 2.5 -1 9 2 9 ns Rise Timec tr -2 3 3 5 Turn -Off Delay Timec td(off) - 83 125 Fall Ti mec tf -3 5 5 3 Source -Drain Diode Ratings and Characteristicsb Pulsed Curren ta ISM - - 480 A Fo rward Voltage VSD IF = 100 A, VGS = 0 - 0.9 1.5 V 1000 -- - -750 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw SPN6099T220TGB A ll data sheet.com
ERISTICS (TA = 25 °C, unles s otherwise noted) Output Characteristics Tra nsconductance Capacitance Transfer Characteristics On-Resistance vs. Drain Current Gate Charge 100 125 150 175 200 225 04 8 1 2 1 6 2 0 VGS =1 0Vt h r u5V VGS =4V VGS =3V VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) 100 150 200 250 0 1 63 24 86 48 0 ID - Drain Current (A) - Transconductance ( S)g fs TC = 125 °C TC = 25 °C TC = - 55 °C 2000 4000 6000 8000 10 000 12 000 0 1 02 03 0 4 05 06 0 Ciss Crss Coss VDS - Drain-to-Source Voltage (V) C - Capacitance (pF) 120 150 180 012345 TC = 125 °C TC = 25 °C TC = - 55 °C VGS - Gate-to-Source Voltage (V) ID - Drain Current (A) 0.002 0.004 0.006 0.008 0.010 0 20 40 60 80 100 120 VGS =5V VGS =1 0V RDS(on) - On-Resistance (Ω) ID - Drain Current (A) 0 20 40 60 80 100 120 140 160 180 200 ID = 110 A VDS =3 0V Qg - Total Gate Charge (nC) VGS - Gate-to-Source Voltage (V) E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw SPN6099T220TGB A ll data sheet.com
ERISTICS (TA = 25 °C, u nless otherwise noted) On-Resistanc e vs. Junction Temperature On-Resistance vs . Gate-to-Source Voltage Source Drain Diode Forward Voltage Threshold Voltage Drain Source Breakdown vs. Junction Temperature - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) (Normalized) RDS(on) - On-Resistance 0.6 0.9 1.2 1.5 1.8 2.1 ID =3 0A VGS =1 0V VGS =4 . 5V 0.01 0.02 0.03 0.04 0.05 02468 1 0 RDS(on) - On-Resistance (Ω) VGS - Gate-to-Source Voltage (V) TJ =2 5 ° C TJ = 150 °C 0 0.2 0.4 0.6 0.8 1.0 1.2 0.01 0.001 0.1 100 VSD - Source-to-Drain Voltage (V) IS - Source Current (A) TJ = - 50 °C TJ = 25 °C TJ = 150 °C - 1.6 - 1.2 - 0.8 - 0.4 0.4 0.8 - 50 - 25 0 25 50 75 100 125 150 175 ID =5m A ID = 250 μA VGS(th) Variance (V) TJ - Temperature (°C) - 50 - 25 0 25 50 75 100 125 150 175 VDS - Drain-to- Source Voltage (V) TJ - Junction Temperature (°C) ID =1 0m A E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw SPN6099T220TGB A ll data sheet.com
TINGS (TA = 25 °C, unles s otherwise noted) Safe Operating Area Normalized Ther mal Transient Impedance, Junction-to-Ambient VDS - Drain-to-Source Voltage (V) * VGS minimum VGS at which RDS(on) is specified - Drain Current (A)ID TC = 25 °C Single Pulse 1 ms 100 ms, 1 s, 10 s, DC 100 µs RDS(on)* Limited by 10 ms 0.01 0.1 1 10 100 BVDSS Limited IDM Limited ID Limited 0.01 0.1 100 1000 10-4 10-3 10-2 10-1 1 10 100 1000 0.01 0.001 0.1 0.0001 Square Wave Pul se Duration (s) Normalized Effective Transient Thermal Impedance E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw SPN6099T220TGB A ll data sheet.com
TINGS (TA = 25 °C, unles s otherwise noted) Norm ali zed Thermal Transient Impedance, Junction-to-Case Note
- The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part ca pabilities can widely vary depending on actual application parameters and operating conditions. Square Wave Pulse Duration (s) 0.1 0.01 10-4 10-3 10-2 10-1 t n e i s n a r T e v i t c e f f E d e z i l a m r o N e c n a d e p m I l a m r e h T 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw SPN6099T220TGB A ll data sheet.com
- M = 1.32 mm to 1.62 mm (dim ension including protrusion) Heatsink hole for HVM 321 L L(1) D H(1) Q Ø P A F J(1) b(1) e(1) e E b C MILLIMETERS INCHES DIM. MIN . MAX. MIN. MAX. A 4.25 4.65 0.167 0.183 b 0.69 1.01 0.027 0.040 b(1) 1.20 1.73 0.047 0.068 c 0.36 0.61 0.014 0.024 D 14.85 15.49 0.585 0.610 E 10.04 10.51 0.395 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 F 1.14 1.40 0.045 0.055 H(1) 6.09 6.48 0.240 0.255 J(1) 2.41 2.92 0.095 0.115 L 13.35 14.02 0.526 0.552 L(1) 3.32 3.82 0.131 0.150 Ø P 3.54 3.94 0.139 0.155 Q 2.60 3.00 0.102 0.118 ECN: X12-0208-Rev. N, 08-Oct-12 DWG: 5471 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw SPN6099T220TGB A ll data sheet.com
All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.tw) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. To the maximum extent permitted by applicable law on Taiwan VBsemi relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability, including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties, including a particular purpose, non-infringement and merchantability guarantee. Statement on certain types of applications are based on knowledge of the product is often used in a typical application of the general product VBsemi Taiwan demand that the Taiwan VBsemi of. Statement on whether the product is suitable for a particular application is non-binding. It is the customer's responsibility to verify specific product features in the products described in the specification is appropriate for use in a particular application. Parameter data sheets and technical specifications can be provided may vary depending on the application and performance over time. All operating parameters, including typical parameters must be made by customer's technical experts validated for each customer application. Product specifications do not expand or modify Taiwan VBsemi purchasing terms and conditions, including but not limited to warranty herein. Unless expressly stated in writing, Taiwan VBsemi products are not intended for use in medical, life saving, or life sustaining applications or any other application. Wherein VBsemi product failure could lead to personal injury or death, use or sale of products used in Taiwan VBsemi such applications using client did not express their own risk. Contact your authorized Taiwan VBsemi people who are related to product design applications and other terms and conditions in writing. The information provided in this document and the company's products without a license, express or implied, by estoppel or otherwise, to any intellectual property rights granted to the VBsemi act or document. Product names and trademarks referred to herein are trademarks of their respective representatives will be all. Material Category Policy Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be RoHS compliant and meets the definition of restrictions under Directive of the European Parliament 2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and electronic equipment (EEE) - modification, unless otherwise specified as inconsistent.(www.VBsemi.tw) Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive 2011/65 /. Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products conform to confirm compliance with IEC 61249-2-21 standard level JS709A. E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw SPN6099T220TGB A ll data sheet.com