SPN01N60C3 INFINEON | Alldatasheet
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SPN01N60C3Rev. 2.1 Cool MOS™ Power Transistor VDS @ Tjmax 650 V RDS(on) 6 Ω ID 0.3 A Feature
- New revolutionary high voltage technology
- Ultra low gate charge
- Extreme dv/dt rated
- Ultra low effective capacitances
- Improved transconductance SOT-223 VPS051631 Type Package Ordering Code SPN01N60C3 SOT-223 Q67040-S4208 Marking 01N60C3 Maximum Ratings Parameter Symbol Value Unit Continuous drain current T A = 25 °C TA = 70 °C ID 0.3 0.2 A Pulsed drain current, tp limited by Tjmax TA = 25 °C ID puls 1.6 Gate source voltage static VGS ±20 V Gate source voltage AC (f >1Hz) VGS ±30 Power dissipation, TA = 25°C Ptot 1.8 W Operating and storage temperature Tj , Tstg -55... +150 °C
SPN01N60C3Rev. 2.1 Maximum Ratings Parameter Symbol Value Unit Drain Source voltage slope VDS = 480 V, ID = 0.8 A, Tj = 125 °C dv/dt 50 V/ns Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Thermal resistance, junction - soldering point RthJS - 35 - K/W SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 1) RthJA 110 Soldering temperature, 1.6 mm (0.063 in.) from case for 10s Tsold - - 260 °C Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA 600 - - V Drain-Source avalanche breakdown voltage V(BR)DS VGS=0V, ID=0.8A - 700 - Gate threshold voltage VGS(th) ID=250µΑ, VGS=VDS 2.3 3 3.7 Zero gate voltage drain current IDSS VDS=600V, VGS=0V, Tj=25°C, Tj=150°C 0.5 µA Gate-source leakage current IGSS VGS=30V, VDS=0V - - 100 nA Drain-source on-state resistance RDS(on) VGS=10V, ID=0.5A, Tj=25°C Tj=150°C 5.5 15.1 Ω
SPN01N60C3Rev. 2.1 Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Transconductance gfs VDS≥2*ID*RDS(on)max, ID=0.2A - 0.45 - S Input capacitance Ciss VGS=0V, VDS=25V, f=1MHz - 100 - pF Output capacitance Coss - 40 - Reverse transfer capacitance Crss - 2.5 - Turn-on delay time td(on) VDD=350V, VGS=0/10V, ID=0.3A, RG=100Ω - 45 - ns Rise time tr - 30 - Turn-off delay time td(off) - 60 90 Fall time tf - 30 45 Gate Charge Characteristics Gate to source charge Qgs VDD=350V, ID=0.3A - 0.9 - nC Gate to drain charge Qgd - 2.2 - Gate charge total Qg VDD=350V, ID=0.3A, VGS=0 to 10V - 3.9 5 Gate plateau voltage V(plateau) VDD=350V, ID=0.3A - 5.5 - V 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air.
SPN01N60C3Rev. 2.1 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Inverse diode continuous forward current IS TA=25°C - - 0.3 A Inverse diode direct current, pulsed ISM - - 1.6 Inverse diode forward voltage VSD VGS=0V, IF=IS - 0.85 1.05 V Reverse recovery time trr VR=350V, IF=IS , diF/dt=100A/µs - 200 340 ns Reverse recovery charge Qrr - 0.45 - µC
SPN01N60C3Rev. 2.1
1 Power dissipation
Ptot = f (TA) 0 20 40 60 80 100 120 °C 160 TA 0.2 0.4 0.6 0.8 1.2 1.4 1.6 W 1.9 SPN01N60C3 Ptot
2 Safe operating area
ID = f ( VDS ) parameter : D = 0 , TA=25°C 10 0 10 1 10 2 10 3 V VDS -3 10 -2 10 -1 10 0 10 1 10 A ID tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms tp = 10ms DC
3 Transient thermal impedance
ZthJC = f (tp) parameter: D = tp/T 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 1 s tp -2 10 -1 10 0 10 1 10 2 10 K/W ZthJC D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse 4 Typ. output characteristic ID = f (VDS); Tj=25°C parameter: tp = 10 µs, VGS 0 5 10 15 V 25 VDS 0.5 1.5 A 2.5 ID 5.5V 6.5V 20V 10V
SPN01N60C3Rev. 2.1
5 Drain-source on-state resistance
RDS(on) = f (Tj) parameter : ID = 0.2 A, VGS = 10 V -60 -20 20 60 100 °C 180 Tj Ω SPN01N60C3 RDS(on) typ 98% 6 Typ. transfer characteristics ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max parameter: tp = 10 µs 0 4 8 12 VGS 20 V 0.5 1.5 A 2.5 ID 7 Typ. gate charge VGS = f (QGate) parameter: ID = 0.3 A pulsed 0 1 2 3 4 nC 5.5 QGate V SPN01N60C3 VGS
0.2 VDS max
0.8 VDS max
8 Forward characteristics of body diode
IF = f (VSD) parameter: Tj , tp = 10 µs VSD -2 10 -1 10 0 10 1 10 A SPN01N60C3 IF Tj = 25 °C typ Tj = 25 °C (98%) Tj = 150 °C typ Tj = 150 °C (98%)
SPN01N60C3Rev. 2.1
9 Drain-source breakdown voltage
V(BR)DSS = f (Tj) -60 -20 20 60 100 °C 180 Tj 540 560 580 600 620 640 660 680 V 720 SPN01N60C3 V(BR)DSS 10 Typ. capacitances C = f (VDS) parameter: VGS=0V, f=1 MHz 0 10 20 30 40 50 60 70 80 V 100 VDS 0 10 1 10 2 10 3 10 pF C Crss Coss Ciss Definition of diodes switching characteristics
SPN01N60C3Rev. 2.1 SOT223 ±0.1 ±0.2 ±0.10.7 321 6.5 acc. to +0.2 DIN 6784 1.6±0.1 15˚max ±0.040.28 7±0.3 ±0.23.5 0.5 0.1 maxmin BM0.25 B A 2.3 4.6 AM0.25
SPN01N60C3Rev. 2.1 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.