SPM4007010 SENSITRON | Alldatasheet

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Technical content

Datasheet 5030, Preliminary

  • 221 West Industry Court Deer Park, NY 11729 (631) 586 7600 FAX (631) 242 9798 •
  • World Wide Web Site - http://www.sensitron.com • E-mail Address - sales@sensitron.com • Page 1 SPM4007010 Dual MOSFET BRIDGE, With Gate Driver DESCRIPTION: A 100 VOLT, 7.5 AMP, DUAL MOSFET BRIDGE A high density Dual H-Bridge capabable of driving 7.5A peak at 100V. This small footprint dual bridge contains low Rdson power FETs , FET drivers and precision current sense reistors. The device does not need heat sinking and is housed in an encapsulated sealed enclosure. The drive input signals are TTL compatable. ELECTRICAL CHARACTERISTICS PER MOSFET DEVICE (Tj=250C UNLESS OTHERWISE SPECIFIED) PPAARRAAMMEETTEERR SSYYMMBBOOLL MMIINN TTYYPP MMAAXX UUNNIITT MOSFET SPECIFICATIONS (Per Device) Drain-to-Source Breakdown Voltage BV DSS 100 - - V Continuos Drain Current TC = 25 OC TC = 100 OC ID - - 7.5 4.8 A Pulsed Drain Current, Pulse Width limited to 1 msec IDM - - 50 A Zero Gate Voltage Drain Current VDS = 80V, VGS=0V Ti=25oC VDS= 80 V, VGS=0V Ti=125oC ICSS - - 250 uA uA Static Drain-to-Source On Resistance, Tj = 25 OC Tj = 150 OC ID= 7.5A, VGS = 10V, RDSon - 0.019 0.035 0.023 .043 Ω Maximum Thermal Resistance RθJC - - 35 oC/W Maximum operating Junction Temperature T jmax -40 - 150 oC Maximum Storage Junction Temperature T jmax -55 - 150 oC Rise Time tr 30 ns Fall Time tf 30 ns

Datasheet 5030, Preliminary

  • 221 West Industry Court Deer Park, NY 11729 (631) 586 7600 FAX (631) 242 9798 •
  • World Wide Web Site - http://www.sensitron.com • E-mail Address - sales@sensitron.com • Page 2 SPM4007010 DIODES CHARACTERISTICS (Per Device) Continuous Source Current, TC = 90 OC IS - - 7.5 A Diode Forward Voltage, IS = 4A, Tj = 25 OC VSD - 1.0 V Diode Reverse Recovery Time (IS=7.5A, di/dt=100 A/µs) trr - - 55 nsec Reverse Recovery Charge (Isd=7.5A, dIsd/dt=100A/us) Qrr 90 nC Gate Driver Supply Voltage VCC 10 12 15 V Supply Input Current (Without PWM Switching) mA Input Drive, On Current 10 uA Input Drive, Off Current I th 1 - uA Boost Capacitor Value Cboost .33 uF Boost Charging Resistor Rboost 10 Ohm

Datasheet 5030, Preliminary

  • 221 West Industry Court Deer Park, NY 11729 (631) 586 7600 FAX (631) 242 9798 •
  • World Wide Web Site - http://www.sensitron.com • E-mail Address - sales@sensitron.com • Page 3 SPM4007010 Under Voltage Lockout VCCUV+ VCCUV- 7.4 8.9 8.2 9.8 9.0 V Input-to-Output Turn On Delay Output Turn On Rise Time Input-to-Output Turn Off Delay Output Turn Off Fall Time @ VCC=50V, ID=4A, T C = 25 tond tr toffd tf 680 100 150 820 170 220 nsec Dead Time 400 520 650 nsec DC Bus Current Sensor Shunt Resistor Value - - .0165 - Ohm Average Switching Current vs. Frequency for each bridge, with both bridges switching, at Tc=100C, Vin=50Vdc. Typical Current vs Freq. 0.1 0 1 02 03 04 05 06 07 08 09 0 1 0 0 1 1 0 Freq. (Khz) Current (A)

Datasheet 5030, Preliminary

  • 221 West Industry Court Deer Park, NY 11729 (631) 586 7600 FAX (631) 242 9798 •
  • World Wide Web Site - http://www.sensitron.com • E-mail Address - sales@sensitron.com • Page 4 SPM4007010

Datasheet 5030, Preliminary

  • 221 West Industry Court Deer Park, NY 11729 (631) 586 7600 FAX (631) 242 9798 •
  • World Wide Web Site - http://www.sensitron.com • E-mail Address - sales@sensitron.com • Page 5 SPM4007010 PIN OUT Pin # Name Description 1 (16) +DC_BUS Positive Power Supply Bus 2 (15) DRV_A Logic Level Drive for Side A 3 (14) OUT_B Output of Bridge, Side B 4 (13) +15_VCC Bias Supply Voltage for Internal Drivers 5 (12) ISEN Current Sense Resistor Output 6 (11) DRV_B Logic level Drive for Side B 7 (10) OUT_A Output of Bridge, Side A 8 (9) GND Drive and Power Ground Return () Pin numbers in parenthasis are for the second H-Bridge DISCLAIMER: 1- The information given herein, including the specifications and dimens ions, is subject to change wi thout prior notice to impr ove product characteristics. Before ordering, purchas ers are advised to contact the Sensitron Semiconductor sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliabilit y is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall Sensitron Semiconducto r be liable for any damages that may result from an accident or any other cause duri ng operation of the user’s units according to the datas heet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall Sensitron Semiconduc tor be liable for any failure in a semic onductor device or any secondary damage result ing from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor. 6- The datasheet(s) may not be reproduced or duplicated, in any fo rm, in whole or part, without the expressed written permissio n of Sensitron Semiconductor. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations.