SPI20N60C3 ISC | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 3
Technical content
iscwebsite：www.iscsemi.cn isc & iscsemi isregisteredtrademark1 IscN-ChannelMOSFETTransistor SPI20N60C3
- FEATURES
- WithTO-262(I2PAK)package
- Lowinputcapacitanceandgate charge
- Highpeak current capability
- Improvedtransconductance
- 100% avalanchetested
- MinimumLot-to-Lotvariations forrobustdevice performanceandreliable operation
- APPLICATIONS
- Switching applications
- ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-SourceVoltage 600 V VGSS Gate-SourceVoltage ±30 V ID DrainCurrent-Continuous@TC=25℃ TC=100℃ 20.7 13.1 A IDM DrainCurrent-SinglePulsed 62.1 A PD TotalDissipation 208 W Tj OperatingJunctionTemperature -55~150 ℃ Tstg StorageTemperature -55~150 ℃
- THERMALCHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(ch-c) Channel-to-casethermalresistance 0.6 ℃/W Rth(ch-a) Channel-to-ambientthermalresistance 62 ℃/W
iscwebsite：www.iscsemi.cn isc & iscsemi isregisteredtrademark2 IscN-ChannelMOSFETTransistor SPI20N60C3 ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-SourceBreakdownVoltage VGS=0V;ID=0.25mA 600 V VGS(th) GateThresholdVoltage VDS=±30V;ID=1mA 3 3.9 V RDS(on) Drain-SourceOn-Resistance VGS=10V;ID=13.1A 160 190 mΩ IGSS Gate-SourceLeakageCurrent VGS= ±30V;VDS=0V ±0.1 μA IDSS Drain-SourceLeakageCurrent VDS=600V;VGS=0V；TJ=25℃ TJ=125℃ 100 μA VSDF Diodeforwardvoltage ISD=20.7A,VGS =0V 1.2 V
iscwebsite：www.iscsemi.cn isc & iscsemi isregisteredtrademark3 IscN-ChannelMOSFETTransistor SPI20N60C3 DIMENSIONALDRAWING