SPP11N65C3 INFINEON | Alldatasheet
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SPP11N65C3, SPA11N65C3 SPI11N65C3 Cool MOS™ Power Transistor VDS 650 V RDS(on) 0.38 Ω ID 11 A Feature
- New revolutionary high voltage technology
- Ultra low gate charge
- Periodic avalanche rated
- Extreme dv/dt rated
- High peak current capability
- Improved transconductance P-TO262-3-1 P-TO220-3-31 P-TO220-3-1 P-TO220-3-31 1 2 3 Marking 11N65C3 11N65C3 11N65C3 Type Package Ordering Code SPP11N65C3 P-TO220-3-1 Q67040-S4557 SPA11N65C3 P-TO220-3-31 Q67040-S4554 SPI11N65C3 P-TO262-3-1 Q67040-S4561 Maximum Ratings Parameter Symbol Value Unit SPA Continuous drain current TC = 25 °C TC = 100 °C ID 111) 71) A Pulsed drain current, tp limited by Tjmax ID puls 33 33 A Avalanche energy, single pulse ID=2.5A, VDD =50V EAS 340 340 mJ Avalanche energy, repetitive tAR limited by Tjmax2) ID=4A, VDD =50V EAR 0.6 0.6 Avalanche current, repetitive tAR limited by Tjmax IAR 4 4 A Gate source voltage VGS ±20 ±20 V Gate source voltage AC (f >1Hz) VGS ±30 ±30 Power dissipation, TC = 25°C Ptot 125 33 W SPP_I Operating and storage temperature Tj , Tstg -55...+150 °C
SPP11N65C3, SPA11N65C3 SPI11N65C3 Maximum Ratings Parameter Symbol Value Unit Drain Source voltage slope VDS = 480 V, ID = 11 A, Tj = 125 °C dv/dt 50 V/ns Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Thermal resistance, junction - case RthJC - - 1 K/W Thermal resistance, junction - case, FullPAK RthJC_FP - - 3.8 Thermal resistance, junction - ambient, leaded RthJA - - 62 Thermal resistance, junction - ambient, FullPAK RthJA_FP - - 80 SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 3) RthJA Soldering temperature, 1.6 mm (0.063 in.) from case for 10s 4) Tsold - - 260 °C Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Drain-source breakdown voltage V(BR)DSS V GS =0V, ID=0.25mA 650 5) - - V Drain-Source avalanche breakdown voltage V(BR)DS V GS =0V, ID=4A - 730 - Gate threshold voltage VGS(th) ID=500µA, VGS=VDS 2.1 3 3.9 Zero gate voltage drain current IDSS V DS =600V, V GS =0V, Tj=25°C Tj=150°C 0.1 100 µA Gate-source leakage current IGSS V GS =20V, V DS =0V - - 100 nA Drain-source on-state resistance RDS(on) V GS =10V, ID=7A Tj=25°C Tj=150°C 0.34 0.92 0.38 Ω Gate input resistance R G f=1MHz, open drain - 0.86 -
SPP11N65C3, SPA11N65C3 SPI11N65C3
Electrical Characteristics
Parameter Symbol Conditions Values Unit min. typ. max. Transconductance gfs V DS ≥2*ID*RDS(on)max, ID=7A - 8.3 - S Input capacitance C iss V GS =0V, VDS =25V, f=1MHz - 1200 - pF Output capacitance C oss - 390 - Reverse transfer capacitanceC rss - 30 - Effective output capacitance,6) energy related Co(er) V GS =0V, V DS =0V to 480V - 45 - Effective output capacitance,7) time related Co(tr) - 85 - Turn-on delay time td(on) V DD =380V, VGS =0/10V, ID=11A, R G =6.8Ω - 10 - ns Rise time tr - 5 - Turn-off delay time td(off) - 44 70 Fall time tf - 5 9 Gate Charge Characteristics Gate to source charge Q gs V DD =480V, ID=11A - 5.5 - nC Gate to drain charge Q gd - 22 - Gate charge total Qg V DD =480V, ID=11A, V GS =0 to 10V - 45 60 Gate plateau voltage V(plateau) V DD =480V, ID=11A - 5.5 - V 1Limited only by maximum temperature 2Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR *f. 3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. 4Soldering temperature for TO-263: 220°C, reflow 5HTRB @ 1000h, 600V, Tjmax resp. accelerated HTRB @ 168h, 600V, Tj= 175°C according to JEDEC A108, MIL-STD 750/1038-1040, 1042 o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% VDSS. 7Co(tr) is a fixed capacitance that gives the same charging time as C oss while VDS is rising from 0 to 80% VDSS.
SPP11N65C3, SPA11N65C3 SPI11N65C3 Parameter Symbol Conditions Values Unit min. typ. max. Inverse diode continuous forward current IS TC =25°C - - 11 A Inverse diode direct current, pulsed ISM - - 33 Inverse diode forward voltage VSD V GS =0V, IF=IS - 1 1.2 V Reverse recovery time trr V R=480V, IF=IS , diF/dt=100A/µs - 400 600 ns Reverse recovery charge Q rr - 6 - µC Peak reverse recovery currentIrrm - 41 - A Peak rate of fall of reverse recovery current dirr/dt Tj=25°C - 1200 - A/µs Typical Transient Thermal Characteristics Symbol Value Unit Symbol Value Unit SPA SPA Rth1 0.015 0.15 K/W Cth1 0.0001878 0.0001878 Ws/K Rth2 0.03 0.03 Cth2 0.0007106 0.0007106 Rth3 0.056 0.056 Cth3 0.000988 0.000988 Rth4 0.197 0.194 Cth4 0.002791 0.002791 Rth5 0.216 0.413 Cth5 0.007285 0.007401 Rth6 0.083 2.522 Cth6 0.063 0.412 SPP_B SPP_B External Heatsink Tj Tcase Tamb Cth1 Cth2 Rth1 Rth,n Cth,n Ptot (t)
SPP11N65C3, SPA11N65C3 SPI11N65C3
1 Power dissipation
Ptot = f (TC ) 0 20 40 60 80 100 120 °C 160 TC 100 110 120 W 140 SPP11N65C3 Ptot
2 Power dissipation FullPAK
Ptot = f (TC ) 0 20 40 60 80 100 120 °C 160 TC W Ptot
3 Safe operating area
I D = f ( VDS ) parameter : D = 0 , TC =25°C 10 0 10 1 10 2 10 3 V VDS -2 10 -1 10 0 10 1 10 2 10 A ID tp = 0.0008 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms DC
4 Safe operating area FullPAK
ID = f (VDS ) parameter: D = 0, TC = 25°C 10 0 10 1 10 2 10 3 V VDS -2 10 -1 10 0 10 1 10 2 10 A ID tp = 0.0008 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms tp = 10 ms DC
SPP11N65C3, SPA11N65C3 SPI11N65C3
5 Transient thermal impedance FullPAK
ZthJC = f (tp) parameter: D = tp/t 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 1 s tp -4 10 -3 10 -2 10 -1 10 0 10 1 10 K/WZthJC D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse 6 Typ. output characteristic ID = f (VDS ); Tj=25°C parameter: tp = 10 µs, VGS 0 3 6 9 12 15 18 21 V 27 VDS A ID 4,5V 5,5V 6,5V 20V 10V 7 Typ. output characteristic ID = f (VDS ); Tj=150°C parameter: tp = 10 µs, VGS 0 5 10 15 V 25 VDS A ID 4.5V 5.5V 20V 7.5V 8 Typ. drain-source on resistance RDS(on)=f(ID) parameter: Tj=150°C, VGS 0 2 4 6 8 10 12 14 16 A 20 ID 0.4 0.6 0.8 1.2 1.4 1.6 Ω RDS(on) 4V 4.5V 5V 5.5V 6V 6.5V 20V
SPP11N65C3, SPA11N65C3 SPI11N65C3
9 Drain-source on-state resistance
RDS(on) = f (Tj) parameter : ID = 7 A, VGS = 10 V -60 -20 20 60 100 °C 180 Tj 0.2 0.4 0.6 0.8 1.2 1.4 1.6 1.8 Ω 2.1 SPP11N65C3 RDS(on) typ 98% 10 Typ. transfer characteristics ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max parameter: tp = 10 µs 0 2 4 6 8 10 12 V 15 VGS A ID 25°C 150°C
12 Forward characteristics of body diode
I F = f (VSD) parameter: Tj , tp = 10 µs VSD -1 10 0 10 1 10 2 10 A SPP11N65C3 IF Tj = 25 °C typ Tj = 25 °C (98%) Tj = 150 °C typ Tj = 150 °C (98%) 11 Typ. gate charge VGS = f (QGate) parameter: ID = 11 A pulsed 0 10 20 30 40 50 nC 70 QGate V SPP11N65C3 VGS 0,8 VDS max DS maxV0,2
SPP11N65C3, SPA11N65C3 SPI11N65C3 13 Typ. switching time t = f (ID), inductive load, Tj=125°C par.: VDS =380V, VGS =0/+13V, R G =6.8Ω 0 2 4 6 8 A 12 ID ns t tr td(off) td(on) tf 14 Typ. switching time t = f ( RG ), inductive load, Tj=125°C par.: VDS =380V, VGS =0/+13V, ID=11 A 0 10 20 30 40 50 Ω 70 R G 100 150 200 250 ns 350 t td(off) td(on) tr tf 15 Typ. drain current slope di/dt = f(RG ), inductive load, Tj = 125°C par.: VDS =380V, VGS =0/+13V, ID=11A 0 20 40 60 80 Ω 120 R G 500 1000 1500 2000 A/µs 3000 di/dt di/dt(on) di/dt(off) 16 Typ. drain source voltage slope dv/dt = f(R G ), inductive load, Tj = 125°C par.: VDS =380V, VGS =0/+13V, ID=11A 0 10 20 30 40 50 Ω 70 R G 100 110 120 V/ns 140 dv/dt dv/dt(off) dv/dt(on)
SPP11N65C3, SPA11N65C3 SPI11N65C3 17 Typ. switching losses E = f (ID), inductive load, Tj=125°C par.: VDS =380V, VGS =0/+13V, R G =6.8Ω 0 2 4 6 8 A 12 ID 0.005 0.01 0.015 0.02 0.025 0.03 mWs 0.04 E Eon* Eoff *) Eon includes SPD06S60 diode commutation losses 18 Typ. switching losses E = f(R G ), inductive load, Tj=125°C par.: VDS =380V, VGS =0/+13V,ID=11A 0 10 20 30 40 50 Ω 70 R G 0.04 0.08 0.12 0.16 mWs 0.24 E Eon* Eoff *) Eon includes SPD06S60 diode commutation losses
19 Avalanche SOA
IAR = f (tAR) par.: Tj ≤ 150 °C 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 4 µs tAR 0.5 1.5 2.5 A IAR Tj(Start)=25°C Tj(Start)=125°C
20 Avalanche energy
E AS = f (Tj) par.: ID = 2.5 A, VDD = 50 V 20 40 60 80 100 120 °C 160 Tj 100 150 200 250 mJ 350 EAS
SPP11N65C3, SPA11N65C3 SPI11N65C3
22 Avalanche power losses
PAR = f (f ) parameter: EAR =0.6mJ 10 4 10 5 10 6 Hz f 100 150 200 W 300 PAR
21 Drain-source breakdown voltage
V(BR)DSS = f (Tj) -60 -20 20 60 100 °C 180 Tj 585 605 625 645 665 685 705 725 745 V
785 SPP11N65C3
V(BR)DSS 23 Typ. capacitances C = f ( VDS ) parameter: VGS =0V, f=1 MHz 0 100 200 300 400 V 600 VDS 0 10 1 10 2 10 3 10 4 10 pF C C iss C oss C rss 24 Typ. C oss stored energy Eoss=f(VDS ) 0 100 200 300 400 V 600 VDS 0.5 1.5 2.5 3.5 4.5 5.5 µJ 7.5 Eoss
SPP11N65C3, SPA11N65C3 SPI11N65C3 Definition of diodes switching characteristics
SPP11N65C3, SPA11N65C3 SPI11N65C3 P-TO-220-3-1 A BA0.25 M 2.8 15.38±0.6 2.54 0.75±0.1 ±0.131.27 4.44 B 9.98±0.48 0.05 All metal surfaces tin plated, except area of cut. C ±0.2 10±0.4 3.7 C 0.5±0.1 ±0.95.23 13.5±0.5 Metal surface min. x=7.25, y=12.3 ±0.2 ±0.221.17 ±0.22.51
SPP11N65C3, SPA11N65C3 SPI11N65C3 P-TO-262-3-1 (I2-PAK) BA0.25 M Typical 2.54 3 x 0.75±0.1 1.05 1.27 B 9.25±0.2 0.05 Metal surface min. X = 7.25, Y = 6.9 C 11.6±0.3 10 ±0.2 C 2.4 0.5±0.1 ±0.24.55 13.5±0.5 All metal surfaces tin plated, except area of cut. ±0.31 8.51) 2 x 4.4 7.551) 0...0.15 0...0.3 2.4 A P-TO-220-3-31 (FullPAK) Please refer to mounting instructions (application note AN-TO220-3-31-01)
SPP11N65C3, SPA11N65C3 SPI11N65C3 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.