SPF-5122Z SIRENZA | Alldatasheet

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Technical content

Broomfield, CO 80021 1 EDS-105470 Rev B The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for i naccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to chang e without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in lif e-support devices and/or systems. Copyright 2006 Sirenza Microdevices, Inc.. All worldwide rights reserved. 303 S. Technology Ct. Phone: (800) SMI-MMIC http://www.sirenza.com SPF-5122Z 400-3000 MHz, GaAs pHEMT Low Noise MMIC Amplifier Product Features

  • Ultra-Low Noise Figure = 0.6dB @ 900MHz
  • Gain = 19dB @ 900MHz
  • High Linearity: OIP3 = 40.5dBm @ 1900MHz
  • P1dB = 24dBm @ 1900MHz
  • Single Supply Operation: 5V @ Idq=90mA
  • Broadband Internal Matching
  • Small Package: QFN 2x2
  • RoHS/WEEE Compliant Package

Applications

  • Cellular, PCS, DCS1800, CDMA, WCDMA Receivers
  • Low noise, high linearity gain block applications Pb RoHS Compliant & Packag eGreen Product Description The SPF-5122Z is a high performance pHEMT MMIC LNA designed for operation from 400-3000 MHz. The on-chip active bias network provides stable current over temperature and process threshold voltage variations. The SPF-5122Z offers ultra-low noise figure and high linearity performance in a gain block configuration. Its single-supply operation and integrated matching networks make implementation remarkably simple. High maximum input power specification make it ideal for high dynamic range receivers. Gain and NF vs. Frequency Broadband Application Circuit 0 500 1000 1500 2000 2500 3000 Frequency (MHz) Gain (dB) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 NF (dB) Symbol Parameters Units Frequency Min. Typ. Max. 0.9 GHz 18.8 1.9 GHz 13.0 0.9 GHz 0.65 1.9 GHz 0.70 0.9 GHz 38.5 1.9 GHz 40.5 0.9 GHz 23.0 1.9 GHz 23.8 0.9 GHz -14.0 1.9 GHz -19.0 0.9 GHz -16.5 1.9 GHz -12.5 0.9 GHz -24.0 1.9 GHz -18.5 VD Device Operating Voltage V 5.0 ID Device Operating Current mA 90 Rth, j-l Thermal Resistance (junction-to-Lead) °C/W 65 Input Return Loss dB ZS = ZL = 50 Ohms, 25C, Broadband Application Circuit Test Conditions: VS = 5.0V, IDQ = 90mA, OIP3 Tone Spacing = 1MHz, Pout per tone = 0 dBm S12 Reverse Isolation dB S21 Small Signal Power Gain dB S22 Output Return Loss dB NF Noise Figure dB S11 P1dB Output Power at 1dB Compression dBm OIP3 Output Third Order Intercept Point dBm

Broomfield, CO 80021 2 EDS-105470 Rev B Advanced Information 303 S. Technology Ct. Phone: (800) SMI-MMIC http://www.sirenza.com SPF-5122Z GaAs pHEMT Low Noise MMIC Amplifier Caution: ESD sensitive Appropriate precautions in handling, packaging and testing devices must be observed. Typical RF Performance (With Broadband Application Circuit) Typical RF Performance (With Broadband Application Circuit) DCIV Over Temperature 100 120 0123456 Vs mA 25C -40C 85C Parameter Absolute Limit Max Device Current (ID) 120mA Max Device Voltage (VD) 5.5V Max RF Input Power 27dBm Max Dissipated Power 660mW Max Junction Temperature (TJ) 150C Operating Temperature Range (TL) -40 to +85C Max Storage Temp. -65 to +150C IDVD < (TJ - TL) / RTH, j-l TL=Source Lead Temperature Absolute Maximum Ratings Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: Parameter Absolute Limit ESD Rating - Human Body Model (HBM) Class 1B Moisture Sensitivity (MSL) MSL 1 Reliability & Quanification Information This product qualification report can be downloaded at: www.sirenza.com IM3 vs. Power -80 -75 -70 -65 -60 -55 -50 -45 -40 0369 1 2 1 5 Power Output Per Tone (dBm) dBc 25C -40C 85C Fc = 900MHz, 1MHz Spacing Test Conditions: VS=5.0V IDQ=90mA OIP3 Tone Spacing = 1MHz Pout per tone = 0 dBm TL = 25°C Zs = ZL = 50Ohms Frequency (GHz) OIP3 vs Frequency 0 500 1000 1500 2000 2500 3000 Frequency (MHz) dBm 25C -40C 85C Pout = 0dBm/Tone, 1MHz Spacing

Broomfield, CO 80021 3 EDS-105470 Rev B Advanced Information 303 S. Technology Ct. Phone: (800) SMI-MMIC http://www.sirenza.com SPF-5122Z GaAs pHEMT Low Noise MMIC Amplifier Typical RF Performance (Broadband Application Circuit, 5V, 90mA) |S11| vs. Frequency -30 -25 -20 -15 -10 0 500 1000 1500 2000 2500 3000 Frequency (MHz) dB -40C 25C 85C |S21| vs. Frequency 0 500 1000 1500 2000 2500 3000 Frequency (MHz) dB -40C 25C 85C |S12| vs. Frequency -30 -25 -20 -15 -10 0 500 1000 1500 2000 2500 3000 Frequency (MHz) dB -40C 25C 85C |S22| vs. Frequency -30 -25 -20 -15 -10 0 500 1000 1500 2000 2500 3000 Frequency (MHz) dB -40C 25C 85C Noise Figure vs. Frequency 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 500 1000 1500 2000 2500 3000 Frequency (MHz) dB 25C 85C P1dB vs. Frequency 0 500 1000 1500 2000 2500 3000 Frequency (MHz) dBm 25C -40C 85C

Broomfield, CO 80021 4 EDS-105470 Rev B Advanced Information 303 S. Technology Ct. Phone: (800) SMI-MMIC http://www.sirenza.com SPF-5122Z GaAs pHEMT Low Noise MMIC Amplifier Typical RF Performance De-embedded S-parameters (5V, 90mA) .05 GHz .5 GHz

1 GHz

2 GHz

3 GHz

4 GHz

6 GHz

8 GHz

10 GHz

12 GHz

.05 GHz .5 GHz S11 vs. Frequency S22 vs. Frequency Max Gain vs. Frequency 02468 1 0 1 2 Frequency (GHz) Gain (dB) Gmax S21 Gmax S21

Broomfield, CO 80021 5 EDS-105470 Rev B Advanced Information 303 S. Technology Ct. Phone: (800) SMI-MMIC http://www.sirenza.com SPF-5122Z GaAs pHEMT Low Noise MMIC Amplifier Broadband Application Circuit (400 - 3000MHz) Evaluation Board Layout RF outRF in Vs 150nH 0.1uF 100pF 100pF SPF-5122Z Epad 2 7 100pF Bill of Materials C1 1x TAJB104KLRH Rohm 0.1uF C2 1x MCH185A101JK Rohm 100pF C3 1x MCH185A101JK Rohm 100pF C4 1x MCH185A101JK Rohm 100pF L1 1x LL1608-FSR15J Toko 150nH

Broomfield, CO 80021 6 EDS-105470 Rev B Advanced Information 303 S. Technology Ct. Phone: (800) SMI-MMIC http://www.sirenza.com SPF-5122Z GaAs pHEMT Low Noise MMIC Amplifier Part Number Ordering Information Nominal Package Dimensions Dimensions in inches [millimeters] Refer to drawing posted at www.sirenza.com for tolerances. Part Identification Suggested Pad LayoutPart Number Reel Size Devices/Reel SPF-5122Z 7" 3000 Pad # Function Description 1, 4, 5, 8 N/A Ground or No Connect. Ground recommended. 2, 3 RFIN RF input pins. These pis are DC coupled and matched to 50 Ohms. An external DC block is required. 6, 7 RFOUT / Bias RF output and Bias pins. These pins are DC coupled and matched to 50 Ohms. Bias is applied through these pads. 51Z SPF Pin 1 Designation (top view) 0.0057 0.0088 0.0295 Ø0.0120 Ø0.0200 0.0337