SPF-2000 SIRENZA | Alldatasheet

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Technical content

1 EDS-103295 Rev A

The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for i naccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at t he user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party . Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc. All worldwide rights reserved. http://www.sirenza.comPhone: (800) SMI-MMIC303 South Technology Court Broomfield, CO 80021 Preliminary Sirenza Microdevices’ SPF-2000 is a high linearity, low noise 0.25µm pHEMT. This 300µm device is ideally biased at 3V,20mA for lowest noise performance. At 5V,40mA the device delivers excellent output TOI of 32 dBm. It provides ideal performance as driver stages in many commercial, industrial and military LNA applications. Product Description SPF-2000 Low Noise High Linearity pHEMT GaAs FET 0.1 - 12 GHz Operation Product Features

  • 15 dB Gmax at 12GHz
  • 1.25 dB FMIN at 12 GHz
  • +32 dBm Output IP3 at 12GHz
  • +20 dBm Output Power at 1dB Compression

Applications

  • High IP3 LNA for VSAT, LMDS, Cellular Systems and Instrumentation
  • Broadband Amplifiers Typical Gain Performance 0 5 10 15 20 25 30 Frequency (GHz) Gain, Gmax (dB) 3V, 20mA 5V, 40mA Gmax Gain Symbol Devi ce Characteri st i cs: Test Condi t i ons, Vds = 3V, Ids = 20mA , T = 25°C ( unl ess ot herwi se not ed) Test Frequency Uni t s Mi n. Typ. Max. Gmax Max i mu m Av ai l abl e Gai n [2 ] Z S = Z S *, Z L = Z L *1 . 9 G H z 4. 0 GHz

12.0 GHz

Ins e rtio n G a in [2 ] Z S = Z L = 50 Ohms 1. 9 GHz dB 16 18 20 NF MI N Mi n i mu m Noi se Fi gu r e Z S = Gamma- opt , Z L = Z L *2 . 0 G H z 4. 0 GHz

  1. 5 0. 6 1.2 P 1dB Ou t pu t 1dB Compr essi on Poi n t V DS = 5V, I DS = 40 mA V DS = 3V, I DS = 20 mA V DS = 5V, I DS = 40 mA V DS = 3V, I DS = 20 mA 2. 0 GHz 2. 0 GHz

20.0 15. 0 G 1dB Gain at 1dB Compression Point V DS = 5V, I DS = 40 mA V DS = 3V, I DS = 20 mA V DS = 5V, I DS = 40 mA V DS = 3V, I DS = 20 mA 2. 0 GHz 2. 0 GHz

  1. 7 17. 0 13. 0 11.0 OI P 3 Out put Third Order I nt ercept Point V DS = 5V, I DS = 40 mA V DS = 3V, I DS = 20 mA V DS = 5V, I DS = 40 mA V DS = 3V, I DS = 20 mA 2. 0 GHz 2. 0 GHz

S aturated D rain C urrent [2 ] mA 30 85 140 V P Pinchof f Vol t age [1 ] V DS = 2V, I DS = 0. 150 mA V -1. 5 -1. 0 -0. 5 G M Transconductance V GS = -0. 25V mS - 112 - BV GS Gat e t o Source Breakdown Vol t age [1 ] IGS = 0. 3mA, drain open V - -17 -8 BV GD Gat e t o Drain Breakdown Vol t age [1] IGD = 0.3mA, V GS = -3.0V V - -17 -8 R TH Thermal Resistance C/ W 1 10 V DS Operat ing Vol t age [3 ] Drain-source V 5.5 IDQ Operat ing Current [3 ] Drain-source, quiescent mA 55 P DI SS Power Dissipation [3 ] W0 . 2 [1] 100% tested - DC parameters tested on wafer. [2] Sample tested - Samples pullled from each wafer lot. Sample test specifications are based on statistical data from sample test measurements. [3] VDS * IDQ < PDISS is recommended for continuous reliable operation.

http://www.sirenza.comPhone: (800) SMI-MMIC

2 EDS-103295 Rev A

303 South Technology Court, Broomfield, CO 80021

SPF-2000 Low Noise High Linearity FET Preliminary Operation of this device beyond any one of these parameters may cause permanent damage. MTTF is inversely proportional to the device junction temperature. For junction temperature and MTTF considerations the operating conditions should also satisfy the following experssions: P DC - POUT < (TJ - TL) / RTH where: PDC = IDS * VDS (W) POUT = RF Output Power (W) TJ = Junction Temperature (°C) TL = Lead Temperature (pin 4) (°C) RTH = Thermal Resistance (°C/W) Absolute Maximum Ratings retemaraPl obmySe ulaVt inU niarDt nerruCI SD I SSD Am etaGdrawroFt nerruCI FSG 3.0A m tnerruCetaGesreveRI RSG 3.0A m ecruoS-ot-niarDe gatloVV SD 7+V niarD-ot-etaGe gatloVV DG 8-V ecruoS-ot-etaGe gatloVV SG 0>ro5-<V rewoPtupnIFRP NI 001W m erutarepmeTgnitarepOT PO 58+ot04-C ° egnaRerutarepmeTegarotST rots 051+ot04-C ° noitapissiDrewoPP SIDS 006W m erutarepmeTlennahCT J +051C ° Assembly Instructions: The recommended die attach is conductive epoxy or AuSn (80/20) solder with limited exposure to temperatures at or above 300C. The preferred wirebond method is thermo-compression wedge bond using 0.7 mil gold wire with a maximum stage temperature of 200C. Aluminum wire should not be used. Design Data: Complete design data including S-parameters, noise parameters, and large signal model are available upon request by contacting applications support at baredie-apps@sirenza.com

http://www.sirenza.comPhone: (800) SMI-MMIC

3 EDS-103295 Rev A

SPF-2000 Low Noise High Linearity FET Preliminary Part Number Ordering InformationCaution: ESD sensitive Appropriate precautions in handling, packaging and testing devices must be observed. Mechanical Drawing Part Number Reel Size Devices/Pack SPF-2000 Gel Pak 100