SPB-2026Z

SPB-2026Z SIRENZA | Alldatasheet

Document overview

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Technical content

Broomfield, CO 80021 1 EDS-105436 Rev D The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for i naccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to chang e without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in lif e-support devices and/or systems. Copyright 2006 Sirenza Microdevices, Inc.. All worldwide rights reserved. 303 S. Technology Ct. Phone: (800) SMI-MMIC http://www.sirenza.com SPB-2026Z 1.7-2.2GHz 2W InGaP Amplifier Product Features

• P1dB = 33.8dBm @ 5V, 1960 MHz
• ACP = -45dBc with 25 dBm Ch. Pwr. @ 1960 MHz
• On-chip Input Power Detector
• Low Thermal Resistance Package
• Power up/down control < 1 μs
• Robust Class 1C ESD

Applications

• Macro/Micro-Cell driver stage
• Pico-Cell output stage
• GSM, CDMA, TDSCDMA, WCDMA
• Single and Multi-Carrier applications Sirenza Microdevices’ SPB-2026Z is a high linearity single-stage class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a surface-mountable plastic encapsulated package. This HBT amplifier is made with InGaP on GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability. This product is well suited for use as a driver stage in macro/micro-cell infrastructure equipment or as the final output stage in pico-cell infrastructure equipment. It can run from a 3V to 6V supply. It is pre- matched to ~5 ohms on the input for broadband performance and ease of matching at the board level. It features an input power detector, on/off power control, ESD protection, excellent overall robustness and a hand reworkable and thermally enhanced SOF-26 package. This product is RoHS and WEEE compliant. Pb RoHS Compliant & Packag eGreen Functional Block Diagram Acti ve Bias RFIN RFOUT Pow er Detector Vbi as = 5V Pow er Up/Dow n Control Vcc = 5V SZP-2026SPB-2026 Symbol Parameters Units Frequency Min. Typ. Max. 1842 MHz 13.6 1960 MHz 12.2 13.7 15.2 2140 MHz 12.1 13.6 15.1 1842 MHz 33.9 1960 MHz 33.8 2140 MHz 31.3 32.8

1842 MHz -49

1960 MHz -42 -45

2140 MHz -48

-55dBc ACP 23 -45dBc ACP 25 -55dBc ACP 23 -45dBc ACP 25 -55dBc ACP 22 -45dBc ACP 25 S 11 dB 1960 MHz 16 21 S22 dB 1960 MHz 8 12 NF dB 1960 MHz 5.2 6.2 Vdet Range V 0.85 to 1.4 ICQ mA 395 445 485 IVPC mA 2.1 Ileak μA 10 RTH, j-l °C/W 12 Power Up Control Current (Vpc = 5V) WCDMA Channel Power tested with 64 Channels FWD S21 dB Output Return Loss Noise Figure Third Order Suppression _22 dBm per tone, 1MHz spacing Channel Power Small Signal Gain dBm Voltage Range for CW Pout=13dBm to 33dBm Quiescent Current (Vcc = 5V) 1842MHz Test Conditions: Vcc = 5V ICQ = 445mA Typ. TL = 25°C ZS = ZL = 50 Ohms 1960MHz 2140MHz dBm dBm Vcc Leakage Current (Vcc = 5V, Vpc = 0V) Thermal Resistance (junction - lead) P1dB IM3 Input Return Loss dBm dBc Output Power at 1 dB Compression

Broomfield, CO 80021 2 EDS-105436 Rev D SPB-2026Z 1.7-2.2 GHz 2W InGaP Amplifier Preliminary 303 S. Technology Ct. Phone: (800) SMI-MMIC http://www.sirenza.com Caution: ESD sensitive Appropriate precautions in handling, packaging and testing devices must be observed. Parameter Absolute Limit Max Device Current (ICE) 1500 mA *Max Device Voltage (VCC) 7 V Power Dissipation 6 W Max. RF Input Power with 50 ohm output load 28 dBm Max. RF Input Power with 10:1 VSWR output load 23 dBm Max. RF Output Power with 50 ohm output load (Continuous long term operation) 30dBm Max. Junction Temp. (TJ) +150°C Operating Temp. Range (TL) -40°C to +85°C Max. Storage Temp. +150°C IDVD < (TJ - TL) / RTH, j-l TL=TLEAD Bias Conditions should also satisfy the following expression: Absolute Maximum Ratings Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. *Note: No RF DrivePin Out Description Parameter Rating ESD Rating - Human Body Model (HBM) Class 1C Moisture Sensitivity Level MSL1 Reliability & Qualification Information This product qualification report can be downloaded at www.sirenza.com VBIAS RFIN VPC VDET RFOUT/ NC Bias GND GND VCC Simplified Device Schematic Pin # Function Description 1 VBIAS This is the supply voltage for the active bias circuit. 2 RFIN This is the RF input pin and has a DC volt age present. An external DC block is required. 3 VPC Power up/down control pin. The voltage on this pin should never exceed the voltage on pin 1 by more than 0.5V unless the supply current from pin 3 is limited < 10mA. 4 VDET This is the output port for the power detector. It samples the power at the input of the amplifier. 5 RFOUT/VCC This is the RF output pin and DC connection to the collector.

6 NC Not connected

These pins are DC connected to the backside paddle. They provide good thermal connection to the backside paddle for hand soldering and rework. Many thermal and electrical GND vias are required as shown in the recommended land pattern.

Broomfield, CO 80021 3 EDS-105436 Rev D SPB-2026Z 1.7-2.2 GHz 2W InGaP Amplifier Preliminary 303 S. Technology Ct. Phone: (800) SMI-MMIC http://www.sirenza.com Typical RF Performance (1805 - 1880MHz Application Circuit) IM3 vs. Tone Power @1842MHz -70 -60 -50 -40 -30 -20 14 16 18 20 22 24 26 28 Pout per tone (dBm) IM3 (dBc) 25C -40C 85C IM3 vs. Freq. (22dBm Output Tones) -70 -60 -50 -40 -30 -20 Frequency (GHz) IM3 (dBc) 25C -40C 85C P1dB vs. Frequency Frequency (GHz) P1dB (dBm) 25C -40C 85C Pin vs. Pout @1842MHz 0 2 4 6 8 1 01 21 41 61 82 02 22 4 Pin (dBm) Pout (dBm) 25C -40C 85C Single Carrier ACP vs. Ch. Pwr. @1842MHz -70 -60 -50 -40 -30 -20 14 16 18 20 22 24 26 Ch. Pwr. (dBm) ACP (dBc) WCDMA with 64 DPCH Source ACPR -40C - - - - - - 85C _ _ _ Dual Carrier ACP vs. Ch. Pwr. @1842MHz -70 -60 -50 -40 -30 -20 14 15 16 18 20 22 24 26 Ch. Pwr. (dBm) IM (dBc) WCDMA with 64 DPCH and 5MHz spacing Source ACPR -40C - - - - - - 85C _ _ _

Broomfield, CO 80021 4 EDS-105436 Rev D SPB-2026Z 1.7-2.2 GHz 2W InGaP Amplifier Preliminary 303 S. Technology Ct. Phone: (800) SMI-MMIC http://www.sirenza.com S-Parameters over Temperature (1805 - 1880MHz Application Circuit) Typical RF Performance (1805 - 1880MHz Application Circuit) Noise Figure vs. Frequency Frequency (GHz) NF (dB) 25C -40C 85C Vdetect vs. Pout @1842MHz 0.6 0.7 0.8 0.9 1.1 1.2 13 15 17 19 21 23 25 27 29 31 33 Pout (dBm) Vdetect (V) 25C -40C 85C |S11| over Temperature -30 -25 -20 -15 -10 Frequency (GHz) S11 (dB) S11 -40C 85C |S21| over Temperature Frequency (GHz) S21 (dB) S21 -40C 85C |S12| over Tem perature -30 -25 -20 -15 -10 Frequency (GHz) S12 (dB) S12 -40C 85C |S22| over Temperature -30 -25 -20 -15 -10 Frequency (GHz) S22 (dB) S22 -40C 85C

Broomfield, CO 80021 5 EDS-105436 Rev D SPB-2026Z 1.7-2.2 GHz 2W InGaP Amplifier Preliminary 303 S. Technology Ct. Phone: (800) SMI-MMIC http://www.sirenza.com Typical RF Performance (1930 - 1990MHz Application Circuit) IM3 vs. Freq. (22dBm Output Tones) -70 -60 -50 -40 -30 -20 Frequency (GHz) IM3 (dBc) 25C -40C 85C IM3 vs. Tone Power @1960MHz -70 -60 -50 -40 -30 -20 14 16 18 20 22 24 26 28 Pout per tone (dBm) IM3 (dBc) 25C -40C 85C P1dB vs. Frequency Frequency (GHz) P1dB (dBm) 25C -40C 85C Pin vs. Pout @1960MHz 0 2 4 6 8 1 01 21 41 61 82 02 22 4 Pin (dBm) Pout (dBm) 25C -40C 85C Single Carrier ACP vs. Ch. Pwr. @1960MHz -70 -60 -50 -40 -30 -20 14 16 18 20 22 24 26 Ch. Pwr. (dBm) ACP (dBc) WCDMA with 64 DPCH Source ACPR -40C - - - - - - 85C _ _ _ Dual Carrier ACP vs. Ch. Pwr. @1960MHz -70 -60 -50 -40 -30 -20 14 15 16 18 20 22 24 26 Ch. Pwr. (dBm) IM (dBc) WCDMA with 64 DPCH and 5MHz spacing Source ACPR -40C - - - - - - 85C _ _ _

Broomfield, CO 80021 6 EDS-105436 Rev D SPB-2026Z 1.7-2.2 GHz 2W InGaP Amplifier Preliminary 303 S. Technology Ct. Phone: (800) SMI-MMIC http://www.sirenza.com S-Parameters over Temperature (1930 - 1990MHz Application Circuit) Typical RF Performance (1930 - 1990MHz Application Circuit) Noise Figure vs. Frequency Frequency (GHz) NF (dB) 25C -40C 85C Vdetect vs. Pout @1960MHz 0.6 0.7 0.8 0.9 1.1 1.2 13 15 17 19 21 23 25 27 29 31 33 Pout (dBm) Vdetect (V) 25C -40C 85C |S11| over Temperature -30 -25 -20 -15 -10 Frequency (GHz) S11 (dB) S11 -40C 85C |S21| over Temperature Frequency (GHz) S21 (dB) S21 -40C 85C |S12| over Tem perature -30 -25 -20 -15 -10 Frequency (GHz) S12 (dB) S12 -40C 85C |S22| over Temperature -30 -25 -20 -15 -10 Frequency (GHz) S22 (dB) S22 -40C 85C

Broomfield, CO 80021 7 EDS-105436 Rev D SPB-2026Z 1.7-2.2 GHz 2W InGaP Amplifier Preliminary 303 S. Technology Ct. Phone: (800) SMI-MMIC http://www.sirenza.com Typical RF Performance (2110 - 2170MHz Application Circuit) P1dB vs. Frequency Frequency (GHz) P1dB (dBm) 25C -40C 85C Pin vs. Pout @2140MHz 0 2 4 6 8 1 01 21 41 61 82 02 22 4 Pin (dBm) Pout (dBm) 25C -40C 85C IM3 vs. Freq. (22dBm Output Tones) -70 -60 -50 -40 -30 -20 Frequency (GHz) IM3 (dBc) 25C -40C 85C IM3 vs. Tone Power @2140MHz -70 -60 -50 -40 -30 -20 14 16 18 20 22 24 26 28 Pout per tone (dBm) IM3 (dBc) 25C -40C 85C Single Carrier ACP vs. Ch. Pwr. @2140MHz -70 -60 -50 -40 -30 -20 14 16 18 20 22 24 26 Ch. Pwr. (dBm) ACP (dBc) WCDMA with 64 DPCH Source ACPR -40C - - - - - - 85C _ _ _ Dual Carrier ACP vs. Ch. Pwr. @2140MHz -70 -60 -50 -40 -30 -20 14 15 16 18 20 22 24 26 Ch. Pwr. (dBm) IM (dBc) WCDMA with 64 DPCH and 5MHz spacing Source ACPR -40C - - - - - - 85C _ _ _

Broomfield, CO 80021 8 EDS-105436 Rev D SPB-2026Z 1.7-2.2 GHz 2W InGaP Amplifier Preliminary 303 S. Technology Ct. Phone: (800) SMI-MMIC http://www.sirenza.com S-Parameters over Temperature (2110 - 2170MHz Application Circuit) Typical RF Performance (2110 - 2170MHz Application Circuit) Noise Figure vs. Frequency 3.5 4.5 5.5 6.5 Frequency (GHz) NF (dB) 25C -40C 85C Vdetect vs. Pout @2140MHz 0.6 0.7 0.8 0.9 1.1 1.2 13 15 17 19 21 23 25 27 29 31 33 Pout (dBm) Vdetect (V) 25C -40C 85C |S11| over Temperature -30 -25 -20 -15 -10 Frequency (GHz) S11 (dB) S11 -40C 85C |S21| over Temperature Frequency (GHz) S21 (dB) S21 -40C 85C |S12| over Tem perature -30 -25 -20 -15 -10 Frequency (GHz) S12 (dB) S12 -40C 85C |S22| over Temperature -30 -25 -20 -15 -10 Frequency (GHz) S22 (dB) S22 -40C 85C

Broomfield, CO 80021 9 EDS-105436 Rev D SPB-2026Z 1.7-2.2 GHz 2W InGaP Amplifier Preliminary 303 S. Technology Ct. Phone: (800) SMI-MMIC http://www.sirenza.com 1805 - 1880MHz Evaluation Board Layout (Vcc & Vpc = 5.0V) Board material GETEK, 10mil thick, Er=3.9, 2 oz. copper 1805 - 1880MHz Application Circuit (Vcc & Vpc = 5.0V) C7C6 Trim Trim VPC RF IN Recommended load range is 10K-100K range * R4 simulates external circuit loadingto ground. 0.1uF R4* 47K 1uF RF VDET OUT Vcc may be removed if VDETECT is not used 1.02K 1% 6Bias SPB-2026Z 4.02K 1% E=4.2° Zo=14.8 E=4.0° Zo=24.3 Zo=27.7 E=4.4° Zo=21.7 E=2.0° E=5.7° Zo=30.5 E=4.1° Zo=27.7 .1uF Zo=20 E=3.2° 3.3pF Zo=27.7 E=10.7° 15pF Zo=14.7 E=11.1° 15pF E=8.9° Zo=14.7 0.1uF 3.9pF 15pF Reference Plane for Electrical Lengths @ end of lead E=4.6° Zo=14.8 Note: Electrical Lengths referenced to center of Shunt components and cuts on traces Er=3.9 2oz copper GETEK ML200D 10mils TanD=.0089 Frequency=1842MHz Zo=30.5 E=12.6° 27nH

Broomfield, CO 80021 10 EDS-105436 Rev D SPB-2026Z 1.7-2.2 GHz 2W InGaP Amplifier Preliminary 303 S. Technology Ct. Phone: (800) SMI-MMIC http://www.sirenza.com 1930 - 1990MHz Evaluation Board Layout (Vcc & Vpc = 5.0V) Board material GETEK, 10mil thick, Er=3.9, 2 oz. copper 1930 - 1990MHz Application Circuit (Vcc & Vpc = 5.0V) C7C6 Trim Trim RF VDET OUT Vcc may be removed if VDETECT is not used 1.02K 1% 6Bias SPB-2026Z VPC RF IN Recommended load range is 10K-100K range * R4 simulates external circuit loadingto ground. 0.1uF R4* 47K 1uF 4.02K 1% 20nH E=4.5° Zo=14.8 E=4.3° Zo=24.3 Zo=27.7 E=4.7° Zo=21.7 E=2.2° E=12.4° Zo=30.5 E=4.4° Zo=27.7 .1uF Zo=20 E=3.4° 2.4pF Zo=27.7 E=11.4° 10pF Zo=14.7 E=10.8° 5.6pF E=9.4° Zo=14.7 0.1uF 3.9pF 10pF Reference Plane for Electrical Lengths @ end of lead E=5.0° Zo=14.8 Note: Electrical Lengths referenced to center of Shunt components and cuts on traces Er=3.9 2oz copper GETEK ML200D 10mils TanD=.0089 Frequency=1960MHz Zo=30.5 E=7.0°

Broomfield, CO 80021 11 EDS-105436 Rev D SPB-2026Z 1.7-2.2 GHz 2W InGaP Amplifier Preliminary 303 S. Technology Ct. Phone: (800) SMI-MMIC http://www.sirenza.com 2110 - 2170MHz Evaluation Board Layout (Vcc & Vpc = 5.0V) Board material GETEK, 10mil thick, Er=3.9, 2 oz. copper 2110 - 2170MHz Application Circuit (Vcc & Vpc = 5.0V) C7C6 Trim Trim VPC RF IN Recommended load range is 10K-100K range * R4 simulates external circuit loadingto ground. 0.1uF R4* 47K 1uF RF VDET OUT Vcc may be removed if VDETECT is not used 1.02K 1% 6Bias SPB-2026Z 4.02K 1% 20nH E=4.9° Zo=14.8 E=4.7° Zo=24.3 Zo=27.7 E=6.2° Zo=21.7 E=2.4°E=17.1° Zo=30.5 E=4.8° Zo=27.7 .1uF Zo=20 E=3.7° 2.2pF Zo=27.7 E=11.4° 10pF Zo=14.7 E=11.8° 5.6pF E=10.3° Zo=14.7 0.1uF 3.3pF 10pF Reference Plane for Electrical Lengths @ end of lead E=6.5° Zo=14.8 Note: Electrical Lengths referenced to center of Shunt components and cuts on traces Er=3.9 2oz copper GETEK ML200D 10mils TanD=.0089 Frequency=2140MHz Zo=30.5 E=4.1°

Broomfield, CO 80021 12 EDS-105436 Rev D SPB-2026Z 1.7-2.2 GHz 2W InGaP Amplifier Preliminary 303 S. Technology Ct. Phone: (800) SMI-MMIC http://www.sirenza.com Suggested PCB Pad Layout Dimensions in mm [inches] Nominal Package Dimensions Dimensions in millimeters (inches) Refer to package drawing posted at www.sirenza.com for tolerances Part Number Ordering Information Part Number Reel Size Devices / Reel SPB-2026Z 13" 3000