SPA-2318 SIRENZA | Alldatasheet

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Technical content

The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for i naccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to chang e without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in lif e-support devices and/or systems. Copyright 2002 Sirenza Microdevices, Inc. All worldwide rights reserved. Product Description EDS-101432 Rev H Phone: (800) SMI-MMIC http://www.sirenza.com303 S. Technology Court, Broomfield, CO 80021 Preliminary SPA-2318 SPA-2318Z Pb RoHS Compliant & Packag eGreen 1700-2200 MHz 1 Watt Power Amp with Active Bias Product Features

  • Now available in Lead Free, RoHS Compliant, & Green Packaging
  • High Linearity Performance: +21 dBm IS-95 Channel Pwr at -55 dBc ACP +20.7 dBm W-CDMA Channel Pwr at -50dBc ACP +47 dBm Typ. OIP3
  • On-chip Active Bias Control
  • High Gain: 24 dB Typ. at 1960 MHz
  • Patented High Reliability GaAsHBT Technology
  • Surface-Mountable Plastic Package

Applications

  • W-CDMA Systems
  • PCS Systems
  • Multi-Carrier Applications Sirenza Microdevices’ SPA-2318 is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot. This product is specifically designed for use as a driver amplifier for infrastructure equipment in the 1960 and 2140 MHz bands. Its high linearity makes it an ideal choice for multi-carrier and digital applications. The matte tin finish on Sirenza’s lead-free package utilizes a post annealing process to mitigate tin whisker formation and is RoHS compliant per EU Directive 2002/95. This package is also manu- factured with green molding compounds that contain no antimony trioxide nor halogenated fire retardants. Symbol Parameters: Test Conditions: Z0 = 50 Ohms Temp = 25 ºC, Vcc = 5.0V Units Min. Typ. Max. f0 Frequency of Operation MHz 1700 2200 P1dB Output Power at 1dB Compression [1] f = 1960 MHz f = 2140 MHz dBm 29.5 29.5 ACP Adjacent Channel Power [1] IS -9 5 @ POUT = 21.0 dBm W-CDMA @ P OUT = 20.7 dBm f = 1960 MHz f = 2140 MHz dBc -55.0 -50.0 -47.0 S21 Small Signal Gain [1,2] f = 1960 MHz f = 2140 MHz dB 22.5 24.0 23.5 25.0 VSWR I nput VSWR [1,2] f = 1960 MHz f = 2140 MHz 1.6:1 1.6:1 OIP3 Output Third Order Intercept Point [2] Power out per tone = +14dBm f = 1960 MHz f = 2140 MHz dBm 46.5 47.0 NF Noise Figure [1,2] f = 1960 MHz f = 2140 MHz dB 5.5 5.5 ICC Device Current [1,2] Ib ias = 10 mA I c1 = 70 mA Ic2 = 320 mA mA 360 400 425 VCC Device Voltage [1,2] V 4.75 5.0 5.25 Rth j-l Thermal Resistance (junction - lead), T L = 85ºC ºC/W 31 VC1 VBIAS RFIN VPC2 RFOUT/ VC2 Active Bias [1] Optimal ACP tune [2] Optimal IP3 tune

2 EDS-101432 Rev H

Phone: (800) SMI-MMIC http://www.sirenza.com303 S. Technology Court, Broomfield, CO 80021 SPA-2318 1700-2200 MHz 1 Watt Power Amp. -75 -70 -65 -60 -55 -50 -45 -40 16 18 20 22 24 25C -40C 85C

1960 MHz Adjacent Channel Power

vs. Channel Output Power ACP Optimized 1960 MHz Application Circuit Data, Icc=400mA, Vcc=5V IS-95, 9 Channels Forward dBc IS-95 CDMA at 1960 MHz 23.75 24 dBm 21 dBm 17 dBm 13 dBm T=25oC dBm

3 EDS-101432 Rev H

Phone: (800) SMI-MMIC http://www.sirenza.com303 S. Technology Court, Broomfield, CO 80021 SPA-2318 1700-2200 MHz 1 Watt Power Amp. -40 -35 -30 -25 -20 -15 -10 S11 S12 S22 25C 85C -40C 25C 85C -40C 100 200 300 400 500 600 0123456 25C -40C 85C ACP Optimized 1960 MHz Application Circuit Data, Icc=400mA, Vcc=5V Input/Output Return Loss, Isolation vs Frequency, T=25 °°°°°C dB GHz P1dB vs Frequency GHz dBm Gain vs. Frequency GHz dB Device Current vs. Source Voltage Vcc (V) Device Current (mA)

4 EDS-101432 Rev H

Phone: (800) SMI-MMIC http://www.sirenza.com303 S. Technology Court, Broomfield, CO 80021 SPA-2318 1700-2200 MHz 1 Watt Power Amp. 1930 - 1990 MHz Schematic 1930 - 1990 MHz Evaluation Board Layout Vpc Eval Board ECB-101161 Rev. C SOIC-8 PA Vcc Short L1 C6 R2 Tune for optimal ACP performance Sirenza Microdevices Vcc 2.2pF 20 nH 8.2pF 10uF Tantalum 20pF 1.5pF(IP3) 2.2pF(ACP) 1.2nH 1000pF 68pF 18nH 6.8K 300 Ohm 1200pF Z=63 Ω, 7.3° Z=50 Ω, 13.2° Tune for optimal ACP performance 1.0pF Ic2 Ic1 Ibias Vpc External Connection Ref. Des. Value Part Number C1 1.5pF, ±0.25pF (IP3) 2.2pF, ±0.25pF (ACP) Rohm MCH18 series C2 1200pF, 5% Rohm MCH18 series C3 1.0pF, ±0.25pF Rohm MCH18 series C4 68pF, 5% Rohm MCH18 series C5 10uF , 10% AVX T AJB106K020R C6 1000pF, 5% Rohm MCH18 series C7 8.2pF, ±0.5pF Rohm MCH18 series C8 2.2pF, ±0.25pF Rohm MCH18 series C9 20pF, 5% Rohm MCH18 series L1 1.2nH, ±0.3nH T oko LL1608-FS series L2 18nH, 5% T oko LL1608-FS series L3 20nH, 5% Coilcraft HQ 0805 series R1 6.8K Ohm, 5% Rohm MCR03 series R2 300 Ohm, 5% Rohm MCR03 series

5 EDS-101432 Rev H

Phone: (800) SMI-MMIC http://www.sirenza.com303 S. Technology Court, Broomfield, CO 80021 SPA-2318 1700-2200 MHz 1 Watt Power Amp. -70 -65 -60 -55 -50 -45 -40 16 17 18 19 20 21 22 25C -40C 85C W-CDMA at 2.14 GHz dBm dBc W-CDMA at 2.14 GHz Adjacent Channel Power vs. Channel Output Power ACP Optimized 2140 MHz Application Circuit Data, Icc=400mA, Vcc=5V W-CDMA setup is PCCPCH+PSCH+SSCH+CPICH+PICH+64 DPCH, 10.5 dB peak to average @ 0.001% probability 21.6 T=25oC

6 EDS-101432 Rev H

Phone: (800) SMI-MMIC http://www.sirenza.com303 S. Technology Court, Broomfield, CO 80021 SPA-2318 1700-2200 MHz 1 Watt Power Amp. 25C 85C -40C 25C 85C -40C -40 -35 -30 -25 -20 -15 -10 S11 S12 S22 100 200 300 400 500 600 0123456 25C -40C 85C ACP Optimized 2140 MHz Application Circuit Data, Icc=400mA, Vcc=5V Device Current vs. Source Voltage Vcc (V) Device Current (mA) Input/Output Return Loss, Isolation vs Frequency, T=25 °°°°°C dB GHz GHz Gain vs. FrequencyP1dB vs Frequency GHz dBm dB

7 EDS-101432 Rev H

Phone: (800) SMI-MMIC http://www.sirenza.com303 S. Technology Court, Broomfield, CO 80021 SPA-2318 1700-2200 MHz 1 Watt Power Amp. Vcc 1.8pF 18 nH 5.6pF 10uF Tantalum 39pF 1.5pF (IP3) 2.2pF (ACP) 2.7nH 1000pF 56pF 5.6nH 6.8K Ω 300 Ω 1800pF 0.1uF Tantalum Z=63 Ω, 21.7° Z=50 Ω, 11.6° Tune for optimal ACP performance Ic2 Ic1 Ibias Vpc External Connection 2110 - 2170 MHz Schematic 2110 - 2170 MHz Evaluation Board Layout Vpc Eval Board ECB-101161 Rev. C SOIC-8 PA Vcc Short R2 Tune for optimal ACP performance Note: All inductors are Toko LL1608-FS unless noted otherwise Sirenza Microdevices Ref. Des. Value Part Number C1 1.5pF, ±0.25pF (IP3) 2.2pF , ±0.25pF (ACP) Rohm MCH18 series C2 56pF , 5% Rohm MCH18 series C3 10uF, 10% AVX TAJB106K020R C4 1000pF, 5% Rohm MCH18 series C5 5.6pF , ±0.5pF Rohm MCH18 series C6 1.8pF , ±0.25pF Rohm MCH18 series C7 1800pF, 5% Rohm MCH18 series C8 0.1uF, 10% Matsuo 267M3502104K C9 39pF , 5% Rohm MCH18 series L1 2.7nH, ±0.3nH T oko LL1608-FS series L2 5.6nH, ±0.3nH T oko LL1608-FS series L3 18nH, 5% T oko LL1608-FS series R1 6.8K Ohm, 5% Rohm MCR03 series R2 300 Ohm, 5% Rohm MCR03 series

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Phone: (800) SMI-MMIC http://www.sirenza.com303 S. Technology Court, Broomfield, CO 80021 SPA-2318 1700-2200 MHz 1 Watt Power Amp. Pin # Function Description 1 VC1 VC1 is the supply voltage for the first stage transistor. The configuration as shown on application schematic is required for optimum RF performance. 2 Vbias Vbias is the bias control pin for the active bias network. Recommended configuration is shown in the Application Schematic. 3 RF In RF input pin. This pin requires the use of an external DC blocking capacitor as shown in the Application Schematic. 4 VPC2 VPC2 is the bias control pin for the active bias network for the second stage. The recommended configuration is shown in the Application Schematic. 5, 6, 7, 8 RF Out/VC2 RF output and bias pins. Bias should be supplied to this pin through an external RF choke. Because DC biasing is present on this pin, a DC blocking capacitor should be used in most applications (see application schematic). The supply side of the bias network should be well bypassed. An output matching network is necessary for optimum performance. EPAD Gnd Exposed area on the bottom side of the package needs to be soldered to the ground plane of the board for thermal and RF performance. Several vias should be located under the EPAD as shown in the recommended land pattern (page 9). 5-8 ACTIVE BIAS NETWORK ACTIVE BIAS NETWORK Simplified Device Schematic Caution: ESD sensitive Appropriate precautions in handling, packag- ing and testing devices must be observed. Absolute Maximum Ratings Parameter (Ta = 25ºC) Absolute Limit Max. Supply Current (IC1) at VCC typ. 150 mA Max. Supply Current (IC2) at VCC typ. 750 mA Max. Device Voltage (VCC) at Icc typ. 6.0 V Max. RF Input Power 16 dBm Max. Junction Temp. (TJ) +160 ºC Max. Storage T emp. +150 ºC Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: ICCVCC (max) < (TJ - TL)/Rth,j-l The Moisture Sensitivity Level rating for this device is level 1 (MSL-1) based on the JEDEC 22-A113 standard classification. No special moisture packaging/handling is required during storage, shipment, or installation of the devices.

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Phone: (800) SMI-MMIC http://www.sirenza.com303 S. Technology Court, Broomfield, CO 80021 SPA-2318 1700-2200 MHz 1 Watt Power Amp. Part Number Ordering Information Package Outline Drawing (See SMDI MPO-101644 for tolerances, available on our website) Recommended Land Pattern Note: DIMENSIONS ARE IN INCHES [MM] Lot ID SPA-2318 DETAIL A .061 [1.549] .155 [3.937] .025 .013 [.33] x 45° .008 .003 [.076] SEATING PLANE BOTTOM VIEW .058 [1.473] TOP VIEW SIDE VIEW END VIEW PARTING LINE .008 [.203] .194 [4.93] .194 [4.928] SEE DETAIL A EXPOSED PAD .045 [1.143] .035 [.889] 13 24 876 5 Beveled Edge 0.020 [0.51] 0.140 [3.56] 0.080 [2.03] 0.050 [1.27] 0.150 [3.81] 0.300 [7.62] Plated-Thru Holes (0.015" Dia, 0.030" Pitch) Machine Screws Part Number Reel Size Devices/Reel SPA-2318 7" 500 SPA-2318Z 7" 500 Lot ID SPA-2318Z Part Identification Marking