SPA-2118

SPA-2118 SIRENZA | Alldatasheet

Document overview

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Technical content

The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2002 Sirenza Microdevices, Inc. All worldwide rights reserved. Product Description EDS-102012 Rev F Phone: (800) SMI-MMIC http://www.sirenza.com522 Almanor Ave., Sunnyvale, CA 94085 SPA-2118

850 MHz 1 Watt Power Amplifier

• High Linearity Performance: +20.7 dBm IS-95 CDMA Channel Power at -55 dBc ACP +47 dBm typ. OIP3
• On-chip Active Bias Control
• High Gain: 33 dB Typ.
• Patented High Reliability GaAsHBT Technology
• Surface-Mountable Plastic Package

Applications

• Multi-Carrier Applications
• AMPS, ISM Applications Sirenza Microdevices’ SPA-2118 is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot. This product is specifically designed for use as a driver amplifier for infrastructure equipment in the 850 MHz band. Its high linearity makes it an ideal choice for multi-carrier and digital applications. l o b m y S : s n o i t i d n o C t s e T : s r e t e m a r a P Z0 5 2 = p m e T s m h O 0 5 =º V , CC C V 0 . 5 = s t i n U . n i M . p y T . x a M f0 n o i t a r e p O f o y c n e u q e rFz HM0 180 090 6 9 P B d 1 n o i s s e r p m o C B d 1 t a r e w o P t u p t uOm Bd0 . 9 2 P C A r e w o P l e n n a h C t n e c a j d A P , t e s f f o z H K 5 8 8 ± , z H M 0 8 8 @ 5 9 - S IT U O m B d 7 . 0 2 =c Bd0 . 5 5-0 . 2 5 - S 1 2 z H M 0 8 8 , n i a G l a n g i S l l a mSB d5 . 130 . 335 . 4 3 R W SVR W S V t u p nI- 1 : 5 . 1 P I O3 t n i o P t p e c r e t n I r e d r O d r i h T t u p t u O m B d 4 1 + = e n o t r e p t u o r e w o Pm Bd0 . 7 4 FNe r u g i F e s i oNB d0 . 5 I C C t n e r r u C e c i v e D I S A I B , A m 0 1 =I 1 C , A m 0 7 =I 2 C A m 0 2 3 = Am0 630 045 2 4 V C C e g a t l o V e c i v eDV 5 7 .40 .55 2 . 5 R l - j h t T , ) d a e l - n o i t c n u j ( e c n a t s i s e R l a m r e h TL C º 5 8=W / Cº1 3 VC1 VBIAS RFIN VPC2 RFOUT/ VC2 Active Bias

2 EDS-102012 Rev F

Phone: (800) SMI-MMIC http://www.sirenza.com522 Almanor Ave., Sunnyvale, CA 94085 Preliminary SPA-2118 850 MHz 1 Watt Power Amp. IS-95 CDMA at 880 MHz Channel Output Power (dBm) dBc 850-950 MHz Application Circuit Data, Icc=400mA, Vcc=5V, IS-95, 9 Channels Forward 880 MHz Adjacent Channel Power vs. Channel Output Power +24 dBm +20 dBm +16 dBm +10 dBm -85.0 -80.0 -75.0 -70.0 -65.0 -60.0 -55.0 -50.0 -45.0 -40.0 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 -40C 25C 85C T=+25C dBm

3 EDS-102012 Rev F

Phone: (800) SMI-MMIC http://www.sirenza.com522 Almanor Ave., Sunnyvale, CA 94085 Preliminary SPA-2118 850 MHz 1 Watt Power Amp. 0.8 0.85 0.9 0.95 1 0.8 0.85 0.9 0.95 1 -50 -40 -30 -20 -10 0.8 0.85 0.9 0.95 1 P1dB vs Frequency GHz dB 850-950 MHz Application Circuit Data, ICC=400mA, VCC=5V Input/Output Return Loss, Isolation vs Frequency GHz dBm GHz Gain vs. Frequency dB S11 S12 S22 -40C 25C 85C -40C 25C 85C T=+25°C 100 200 300 400 500 600 0123456 25C -40C 85C Device Current vs. Source Voltage Vcc (V) Device Current (mA)

4 EDS-102012 Rev F

Phone: (800) SMI-MMIC http://www.sirenza.com522 Almanor Ave., Sunnyvale, CA 94085 Preliminary SPA-2118 850 MHz 1 Watt Power Amp. 850 - 950 MHz Schematic 850 - 950 MHz Evaluation Board Layout Vcc 6.8pF 33 nH39pF 10uF Tantalum 100pF 15pF 2.2nH 1000pF 82pF 6.8K

330 Ohm

Z=63 Ω , 9.5° Z=50 Ω , 15.1° IC2 IC1 IBIAS Vpc External Connection Vpc Eval Board ECB-101161 Rev. C SOIC-8 PA Vcc C1 L2 C5L1 2012 Sirenza Microdevices .seD.feRe ulaVr ebmuNtraP 1C% 5,Fp51s eires81HCMmhoR 2C% 5,Fp28s eires81HCMmhoR 3C% 01,Fu01R 020K601BJATXVA 4C% 5,Fp0001s eires81HCMmhoR 5C% 5,Fp93s eires81HCMmhoR 6C% 5,Fp0021s eires81HCMmhoR 7CF p5.0±,Fp8.6s eires81HCMmhoR 8C% 5,Fp001s eires81HCMmhoR 1LH n3.0±,Hn2.2s eiresSF-8061LLokoT 2L% 5,Hn33s eiresQH8001tfarclioC 1R% 5,mhOK8.6s eires30RCMmhoR 2R% 5,mhO033s eires30RCMmhoR

5 EDS-102012 Rev F

Phone: (800) SMI-MMIC http://www.sirenza.com522 Almanor Ave., Sunnyvale, CA 94085 Preliminary SPA-2118 850 MHz 1 Watt Power Amp. #niPn oitcnuFn oitpircseD 1 1cV sanoitarugifnocehT.rotsisnartegatstsrifehtrofegatlovylppusehtsi1CV .ecnamrofrepFRmumitporofderiuqersicitamehcsnoitacilppanonwohs 2 saibV dednemmoceR.krowtensaibevitcaehtrofniplortnocsaibehtsisaibV .citamehcSnoitacilppAehtninwohssinoitarugifnoc 3 nIFR saroticapacgnikcolbCDlanretxenafoesuehtseriuqernipsihT.niptupniFR .citamehcSnoitacilppAehtninwohs 4 2cpV .egatsdnocesehtrofkrowtensaibevitcaehtrofniplortnocsaibehtsi2cpV .citamehcSnoitacilppAehtninwohssinoitarugifnocdednemmocerehT 8,7,6,5 2cV/tuOFR lanretxenahguorhtnipsihtotdeilppusebdluohssaiB.nipsaibdnatuptuoFR roticapacgnikcolbCDa,nipsihtnotneserpsignisaibCDesuaceB.ekohcFR ylppusehT.)citamehcsnoitacilppaees(snoitacilppatsomnidesuebdluohs sikrowtengnihctamtuptuonA.dessapybllewebdluohskrowtensaibehtfoedis .ecnamrofrepmumitporofyrassecen DAPE dnG ehtotderedlosebotsdeenegakcapehtfoedismottobehtnoaeradesopxE dluohssaivlareveS.ecnamrofrepFRdnalamrehtrofdraobehtfoenalpdnuorg .)6egap(nrettapdnaldednemmocerehtninwohssaDAPEehtrednudetacoleb 5-8 ACTIVE BIAS NETWORK ACTIVE BIAS NETWORK Simplified Device Schematic Caution: ESD sensitive Appropriate precautions in handling, packag- ing and testing devices must be observed. Absolute Maximum Ratings )Cº52=aT(retemaraP etulosbA timiL I(tnerruCylppuS.xaM 1C Vta) CC .pytA m051 I(tnerruCylppuS.xaM 2C Vta) CC .pytA m057 V(egatloVeciveD.xaM CC Ita) cc .pytV 0.6 rewoPtupnIFR.xaMm Bd01 T(.pmeTnoitcnuJ.xaM J)C º061+ .pmeTegarotS.xaMC º051+ stimilesehtfoenoynadnoyebecivedsihtfonoitarepO suounitnocelbailerroF.egamadtnenamrepesuacyam deecxetontsumtnerrucdnaegatlovecivedeht,noitarepo noelbatehtnideificepsseulavgnitarepomumixameht .enoegap gniwollofehtyfsitasosladluohssnoitidnoCsaiB :noisserpxe I CC V CC T(<)xam( J T- L R/) ht l-j, The Moisture Sensitivity Level rating for this device is level 1 (MSL-1) based on the JEDEC 22-A113 standard classifica- tion. No special moisture packaging/handling is required during storage, shipment, or installation of the devices.

6 EDS-102012 Rev F

Phone: (800) SMI-MMIC http://www.sirenza.com522 Almanor Ave., Sunnyvale, CA 94085 Preliminary SPA-2118 850 MHz 1 Watt Power Amp. rebmuNtraPl eeRrePseciveDe ziSleeR 8112-APS0 05" 7 Part Number Ordering Information Recommended Land Pattern Lot ID SPA 2118 DETAIL A .061 [1.549] .155 [3.937] .025 .013 [.33] x 45° .008 .003 [.076] SEATING PLANE BOTTOM VIEW .058 [1.473] TOP VIEW SIDE VIEW END VIEW PARTING LINE .008 [.203] .194 [4.93] .194 [4.928] SEE DETAIL A EXPOSED PAD .045 [1.143] .035 [.889] 13 24 876 5 Beveled Edge Note: DIMENSIONS ARE IN INCHES [MM] Package Outline Drawing (See SMDI MPO-101644 for tolerances, available on our website) 0.020 [0.51] 0.140 [3.56] 0.080 [2.03] 0.050 [1.27] 0.150 [3.81] 0.300 [7.62] Plated-Thru Holes (0.015" Dia, 0.030" Pitch) Machine Screws