SPA-1118 SIRENZA | Alldatasheet

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Technical content

The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for i naccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to chang e without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in lif e-support devices and/or systems. Copyright 2002 Sirenza Microdevices, Inc. All worldwide rights reserved. Product Description EDS-101427 Rev I Phone: (800) SMI-MMIC http://www.sirenza.com303 S. Technology Court, Broomfield, CO 80021 SPA-1118 SPA-1118Z Pb RoHS Compliant & Packag eGreen

850 MHz 1 Watt Power Amplifier

  • Now available in Lead Free, RoHS Compliant, & Green Packaging
  • High Linearity Performance: +21 dBm IS-95 Channel Power at -55 dBc ACP +48 dBm OIP3 Typ.
  • On-chip Active Bias Control
  • Patented High Reliability GaAs HBT Technology
  • Surface-Mountable Plastic Package

Applications

  • Multi-Carrier Applications
  • AMPS, ISM Applications Sirenza Microdevices’ SPA-1118 is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot. This product is specifically designed for use as a driver amplifier for infrastructure equipment in the 850 MHz band. Its high linearity makes it an ideal choice for wireless data and digital applications. The matte tin finish on Sirenza’s lead-free package utilizes a post annealing process to mitigate tin whisker formation and is RoHS compliant per EU Directive 2002/95. This package is also manufactured with green molding compounds that contain no antimony trioxide nor halogenated fire retardants. Symbol Parameters: Test Conditions: Z0 = 50 Ohms, V CC = 5V, Temp = 25ºC Uni ts Min. Typ. Max. f0 Frequency of Operation MHz 810 960 P1dB Output Power at 1dB Compression dBm 29.5 ACP Adjacent Channel Power I S-95 @ 880 MHz, ±885 KHz, P OUT = 21 dBm dBc -57.0 -54.0 S21 Small Signal Gain, 880 MHz dB 16.2 17.2 18.2 VSWR I nput VSWR - 1.5:1 OI P3 Output Third Order I ntercept Point Power out per tone = +14 dBm dBm 48.0 NF Noise Figure dB 7.5 ICC Dev ice Current mA 275 310 330 VCC Device Voltage V 4.75 5.0 5.25 Rth,j-l Thermal Resistance (junction - lead) , T L=85ºC ºC/W 35 VCC VBIAS RFIN N/C RFOUT/ VCC Active Bias Input Match N/C N/C N/C

SPA-1118 850 MHz 1 Watt Power Amp. EDS-101427 Rev I Phone: (800) SMI-MMIC http://www.sirenza.com303 S. Technology Court, Broomfield, CO 80021 25C 85C -40C 25C 85C -40C -40 -35 -30 -25 -20 -15 -10 S11 S12 S22 -75 -70 -65 -60 -55 -50 -45 17 18 19 20 21 22 23 24 -40C 85C 25C P1dB vs. Frequency GHz dBm 850-950 MHz Application Circuit Data, ICC=320 mA, VCC=5V IS-95 @ 880 MHz Adj. Channel Pwr. vs. Channel Output Pwr. dBm dBc GHz Gain vs. Frequency dB Input/Output Return Loss, Isolation vs. Frequency, T=25 °C GHz dB 100 150 200 250 300 350 400 450 012345 25C -40C 85C Device Current vs. Source Voltage Vcc (V) Device Current (mA)

SPA-1118 850 MHz 1 Watt Power Amp.

3 EDS-101427 Rev I

Phone: (800) SMI-MMIC http://www.sirenza.com303 S. Technology Court, Broomfield, CO 80021 VCC 5.6 pF 100 nH 43pF 10uF, Tantalum 22pF22pF Z=50Ω, 17° 360Ω 1000pF 850 - 950 MHz Schematic 850 - 950 MHz Evaluation Board Layout Vpc Vcc SOIC-8 PA ECB-101161 Rev. C Eval Board C1 C6R1 Note: Pins 4, 5, 7, 8 are not connected internally Sirenza Microdevices Ref. Des. Value Part Number C1, C6 22pF, 5% Rohm MCH18 series C2 10uF, 10% AVX TAJB106K020R C3 1000pF, 5% Rohm MCH18 series C4 43pF, 5% Rohm MCH18 series C5 5.6pF, ±0.5pF Rohm MCH18 series L1 100nH, 5% Coilcraft 1008HQ series R1 360 Ohm, 5% Rohm MCR03 series

SPA-1118 850 MHz 1 Watt Power Amp. EDS-101427 Rev I Phone: (800) SMI-MMIC http://www.sirenza.com303 S. Technology Court, Broomfield, CO 80021 Pin # Function Description Device Schematic 1 Vcc VCC is the supply voltage for the active bias network. Bypassing in the appropriate location as shown on application schematic is required for optimum RF performance. 2 Vbias Vbias is the bias control pin for the active bias network. Device current is set by the current into this pin. Recommended configuration is shown in the Application Schematic. Bypassing in the appropriate location as shown on application schematic is required for optimum RF performance. 3 RF In RF input pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency of operation. 4, 5 N/C No connection 6 RF Out/Vcc RF output and bias pin. Bias should be supplied to this pin through an external RF choke. Because DC biasing is present on this pin, a DC blocking capacitor should be used in most applications (see application schematic). The supply side of the bias network should be well bypassed. An output matching network is necessary for optimum performance. 7, 8 N/C No connection EPAD Gnd Exposed area on the bottom side of the package needs to be soldered to the ground plane of the board for thermal and RF performance. Several vias should be located under the EPAD as shown in the recommended land pattern (page 5). 6ACTIVE BIAS NETWORK 4,5,7,8 N/C Absolute Maximum Ratings Parameter (Ta = 25ºC) Absolute Limit Max. Supply Current (ICC) at VCC typ. 750 mA Max. Device Voltage (VCC) at ICC typ. 6.0 V Max. RF Input Power 24 dBm Max. Junction T emp. (T J) +160 ºC Max. Storage T emp. +150 ºC Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: ICCVCC (max) < (TJ - TL)/Rth,j-l Caution: ESD sensitive Appropriate precautions in handling, packaging and testing devices must be The Moisture Sensitivity Level rating for this device is level 1 (MSL-1) based on the JEDEC 22-A113 standard classification. No special moisture packaging/handling is required during storage, shipment, or installation of the devices.

SPA-1118 850 MHz 1 Watt Power Amp.

5 EDS-101427 Rev I

Phone: (800) SMI-MMIC http://www.sirenza.com303 S. Technology Court, Broomfield, CO 80021 Part Number Ordering Information Package Outline Drawing (See SMDI MPO-101644 for tolerances, available on our website) Recommended Land Pattern Note: DIMENSIONS ARE IN INCHES [MM] DETAIL A .061 [1.549] .155 [3.937] .025 .013 [.33] x 45° .008 .003 [.076] SEATING PLANE BOTTOM VIEW .058 [1.473] TOP VIEW SIDE VIEW END VIEW PARTING LINE .008 [.203] .194 [4.93] .194 [4.928] SEE DETAIL A EXPOSED PAD .045 [1.143] .035 [.889] 13 24 876 5 Beveled Edge 0.020 [0.51] 0.140 [3.56] 0.080 [2.03] 0.050 [1.27] 0.150 [3.81] 0.300 [7.62] Plated-Thru Holes (0.015" Dia, 0.030" Pitch) Machine Screws Lot ID SPA 1118 Part Number Reel Size Devices/Reel SPA-1118 7" 500 SPA-1118Z 7" 500 Part Identification Marking Lot ID SPA-1118Z Lot ID SPA-1118