SP8008 LITTELFUSE | Alldatasheet

Document overview

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Technical content

Features

  • ESD, IEC 61000-4-2, +30kV/-23kV contact, +30kV/-23kV air
  • EFT , IEC 61000-4-4, 40A (tP=5/50ns)
  • Lightning, IEC 61000-4-5 2nd edition, 4A (tP=8/20μs)
  • Low capacitance of 0.3pF @0V , 3GHz (TYP) per I/O
  • 5634 N Menard Ave,
  • Low leakage current of 0.5μA (MAX) at 5V
  • Small form factor μDFN packages (JEDEC MO- 229) saves board space and supports straight- through routing of the data lines.
  • Halogen free, Lead free and RoHS compliant
  • UL Recognized compound meeting flammability rating V-0
  • AEC-Q101 qualified
  • LCD/PDP TVs
  • LCD/LED Monitors
  • Notebook Computers
  • Ultrabooks
  • Automotive Displays
  • Flat Panel Displays
  • Digital Signage
  • HD Cameras/Projectors
  • USB and HDMI interfaces Pinout I/O 2 I/O 4 I/O 6 I/O 8 I/O 5I/O 3I/O 1GND Functional Block Diagram I/O I/O GND I/O I/O GND I/O I/O GND I/O I/O GND GND GND Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. SP8008 Series Diode Array RoHS Pb GREEN

TVS Diode Array (SPA ® Diodes) General Purpose ESD Protection - SP8008 Series © 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 09/23/19 CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the component. This is a stress only rating and operation of the component at these or any other conditions above those indicated in the operational sections of this specification is not implied. Absolute Maximum Ratings Symbol Parameter Value Units IPP Peak Current (tp=8/20μs) 4.0 A TOP Operating Temperature -40 to 125 °C TSTOR Storage Temperature -55 to 150 °C Electrical Characteristics (TOP=25ºC) Parameter Symbol T est Conditions Min Ty p Max Units Reverse Standoff Voltage VRWM IR≤1μA 5 V Breakdown Voltage VBR IR=1mA 6 V Reverse Leakage Current ILEAK VR=5V , I/O to GND 0.5 µA Clamp Voltage1 VC IPP=1A, tP=8/20µA, Fwd 9.39 V IPP=2A, tP=8/20µA, Fwd 10.38 V IPP=4A, tP=8/20µA, Fwd 12.45 V Dynamic Resistance1 RDYN TLP , tP=100ns, I/O to GND 0.4 Ω ESD Withstand Voltage1 VESD IEC 61000-4-2 (Contact) +30 / -23 kV IEC 61000-4-2 (Air) +30 / -23 kV Diode Capacitance1 CI/O-GND Reverse Bias=0V , f=3 GHz 0.3 pF Note: 1. Parameter is guaranteed by design and/or component characterization. 10% 20% 30% 40% 50% 60% 70% 80% 90% 100% 110% Time (/uni03BCs) Pe rcen t of IPP Clamping Voltage vs. IPP 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 1234 5 Clamp Voltage (VC) Peak Pulse Current-IPP (A) 8/20μs Pulse Waveform Positive T ransmission Line Pulsing (TLP) Plot 02468 10 12 14 16 18 20 22 24 TLP Voltage (V) TLP Current (A) NegativeT ransmission Line Pulsing (TLP) Plot -40 -35 -30 -25 -20 -15 -10 TLP Voltage (V) TLP Current (A)

TVS Diode Array (SPA ® Diodes) General Purpose ESD Protection - SP8008 Series © 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 09/23/19 Time Temperature TP TL TS(max) TS(min) tP tL tS time to peak temperature PreheatPreheat Ramp-upRamp-up Ramp-downRamp-dow Critical Zone TL to TP Critical Zone TL to TP Soldering Parameters IEC 61000−4−2 +8 kV Contact ESD Clamping Voltage IEC 61000−4−2 -8 kV Contact ESD Clamping Voltage Eye diagram 5Gbps, 2.5 GHz w/SP8008-08UTG Insertion Loss Diagram Frequency (Hz) 1.E+09 -20.0 S21 Insertion Loss (dB) -10.0 -5.0 -15.0 -25.0 -30.0 Product Characteristics Lead Plating Pre-Plated Frame Lead Material Copper Alloy Substrate Material Silicon Body Material Molded Compound Flammability UL Recognized compound meeting flammabilit y rating V-0. Reflow Condition Pb – Free assembly Pre Heat - T emperature Min (Ts(min)) 150°C - T emperature Max (Ts(max)) 200°C - Time (min to max) (ts) 60 – 180 secs Average ramp up rate (Liquidus) T emp (TL) to peak 3°C/second max TS(max) to TL - Ramp-up Rate 3°C/second max Reflow - T emperature (TL) (Liquidus) 217°C - T emperature (tL) 60 – 150 seconds Peak T emperature (TP) 260+0/-5 °C Time within 5°C of actual peak T emperature (tp) 20 – 40 seconds Ramp-down Rate 6°C/second max Time 25°C to peak T emperature (TP) 8 minutes Max. Do not exceed 260°C

TVS Diode Array (SPA ® Diodes) General Purpose ESD Protection - SP8008 Series © 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 09/23/19 Part Number Package Min. Order Qty. SP8008-08UTG µDFN-14 3000

Ordering Information

Part Marking SystemPart Numbering System SP 8008 08 U T G Series Number of Channels Package T= Tape & Reel G= Green TVS Diode Arrays (SPA Diodes) U=/uni03BCDFN-14 (5.5x1.5mm) Package Dimensions µDFN-14(5.5x1.5x0.5mm) JEDEC MO-229 Symbol Millimeters Inches Min Nom Max Min Nom Max NdA 5.00 BSC 0.197 BSC eA 0.50 BSC 0.020 BSC eB 1 .50 BSC 0.059 BSC NdB 3.00 BSC 0.118 BSC D E E2L NdB eB D2 b eA NdA Top View Bottom View Side View 111 11 1 14 12 c A Pin1 h Recommended soldering pad layout 1 11 0.56mm (3X) 1.80mm 0.43mm (6X)0.50mm (14X)e=0.50mm0.26mm (14X) 0.62mm (3X) Package Outline

TVS Diode Array (SPA ® Diodes) General Purpose ESD Protection - SP8008 Series © 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 09/23/19 Embossed Carrier T ape & Reel Specification — µDFN-14 Symbol Millimeters A0 1 .75 +/- 0.10 B0 5.75 +/- 0.10 D1 Ø 1 .0 min E 1 .75 +/- 0.10 F 5.50 +/- 0.05 K0 0.70 +/- 0.10 P0 2.00 +/- 0.05 P1 4.00 +/- 0.10 P2 4.00 +/- 0.10 T 0.30 +/- 0.05 P0 D0 E F W T B0K0 User Feeding Direction Pin 1 Location Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at http://www.littelfuse.com/disclaimer-electronics.