SP4337 LITTELFUSE | Alldatasheet
Document overview
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- PDF pages: 5
Technical content
Features
- ESD, IEC 61000-4-2, ±15kV contact , ±15kV Air
- EFT , IEC 61000-4-4, 40A (5/50ns)
- Lightning, 7A (8/20 as defined in IEC 61000-4-5 2nd edition)
- Low capacitance of 0.18pF (Typ @ VR=0V)
- Space efficient 0201
- Halogen free, lead free and RoHS compliant
- USB 4.0
- HDMI
- DisplayPort
- Thunderbolt
- S-ATA
- 2.5G/5G/10G Ethernet Pinout Functional Block Diagram 1 2 Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. RoHS Pb GREEN
0201 Flipchip
SP4337 0.18pF 15KV Bidirectional TVS
©2020 Littelfuse, Inc. Specifications are subject to change without notice. TVS Diode Arrays (SPA ® Diodes) Revision: 03/17/21 Low Capacitance ESD Protection - SP4337 CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the component. This is a stress only rating and operation of the component at these or any other conditions above those indicated in the operational sections of this specification is not implied. Absolute Maximum Ratings Symbol Parameter Value Units IPP Peak Current (tp=8/20μs) 7. 0 A TOP Operating Temperature -40 to 125 °C TSTOR Storage Temperature -55 to 150 °C Electrical Characteristics (TOP=25ºC) Note: 1 . Parameter is guaranteed by design and/or component characterization. 2.Transmission Line Pulse (TLP) with 100ns width, 0.2ns rise time, and average window t1=70ns to t2= 90ns Parameter Symbol Test Conditions Min Typ Max Units Reverse Standoff Voltage VRWM IR=1μA 5 V Breakdown Voltage VBR IR=1mA 7. 8 V Reverse Leakage Current ILEAK VR=5V 1 100 nA Holding Voltage VHOLD I/O to GND 2.3 V Clamp Voltage1 VC IPP=7A, tp=8/20μs, I/O to GND 5 7 V Dynamic Resistance2 RDYN TLP , tP=100ns, I/O to GND 0.23 Ω ESD Withstand Voltage1 VESD IEC 61000-4-2 (Contact Discharge) ±15 kV IEC 61000-4-2 (Air Discharge) ±15 kV Diode Capacitance1 CIO-GND Reverse Bias=0V , f= 1 MHz 0.18 pF Clamping Voltage vs IPP 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 1 234567 Clamp Voltage (VC) Peak Pulse Current- IPP(A) Capacitance vs Reverse Bias 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 012345 Capacitance (pF) Bias Voltage (V)
©2020 Littelfuse, Inc. Specifications are subject to change without notice. TVS Diode Arrays (SPA ® Diodes) Revision: 03/17/21 Low Capacitance ESD Protection - SP4337 Positive T ransmission Line Pulsing (TLP) Plot 05 10 15 20 TLP Current (A) TLP Voltage (V) Negative T ransmission Line Pulsing (TLP) Plot TLP Voltage (V) TLP Current (A) -24 -22 -20 -18 -16 -14 -12 -10 -20- 15 -10- 50 8/20μs Pulse Waveform 10% 20% 30% 40% 50% 60% 70% 80% 90% 100% 110% Time (/uni03BCs) Percent of IPP IEC 61000-4-2 +8 kV Contact ESD Clamping Voltage IEC 61000-4-2 -8 kV Contact ESD Clamping Voltage
©2020 Littelfuse, Inc. Specifications are subject to change without notice. TVS Diode Arrays (SPA ® Diodes) Revision: 03/17/21 Low Capacitance ESD Protection - SP4337 Part Numbering SystemPart Marking System SP 4337 01 T G Series Number of Channels Package W: Flipchip T= Tape & Reel G= Green TVS Diode Arrays (SPA Diodes) W D
Ordering Information
Part Number Package Min. Order Qty. SP4337-01WTG Flipchip 10000 Product Characteristics Time Temperature TP TL TS(max) TS(min) tP tL tS time to peak temperature PreheatPreheat Ramp-upRamp-up Ramp-downRamp-do Critical Zone TL to TP Critical Zone TL to TP Reflow Condition Pb – Free assembly Pre Heat - Temperature Min (Ts(min)) 150°C - Temperature Max (Ts(max)) 200°C - Time (min to max) (ts) 60 – 180 secs Average ramp up rate (Liquidus) Temp (TL) to peak 3°C/second max TS(max) to TL - Ramp-up Rate 3°C/second max Reflow - Temperature (TL) (Liquidus) 217°C - Temperature (tL) 60 – 150 seconds Peak Temperature (TP) 260+0/-5 °C Time within 5°C of actual peak Temperature (tp) 20 – 40 seconds Ramp-down Rate 6°C/second max Time 25°C to peak Temperature (TP) 8 minutes Max. Do not exceed 260°C Soldering Parameters Lead Plating Tin plating Lead Material Copper bump Substrate Material Silicon Flammability UL Recognized compound meeting flammability rating V-0
©2020 Littelfuse, Inc. Specifications are subject to change without notice. TVS Diode Arrays (SPA ® Diodes) Revision: 03/17/21 Low Capacitance ESD Protection - SP4337 Package Dimensions — FLIPCHIP Embossed Carrier T ape & Reel Specification — FLIPCHIP A0 K0 B0 T P2P1 D E FW Symbol Millimeters A0 0.41+/-0.03 B0 0.70+/-0.03 D ø 1 .50 + 0.10 D1 ø 0.20 +/- 0.05 E 1 .75+/-0.10 F 3.50+/-0.05 K0 0.38+/-0.03 P0 4.00+/-0.10 P1 2.00+/-0.05 P2 2.00+/-0.05 W 8.00+0.30/-0.10 T 0.23+/-0.02 Recommended Soldering Pad Layout (mm) 0.195 0.325 0.595 0.400 0.298 Symbol D 0.605 0.655 0.0238 0.0258 E 0.305 0.355 0.0120 0.0140 D1 0.145 0.155 0.0057 0.0061 E1 0.245 0.255 0.0096 0.0100 D2 0.400 BSC 0.0157 BSC A 0.273 0.329 0.0107 0.0130 A2 0.265 0.315 0.0104 0.0124 A1 0.008 0.014 0.0003 0.0006 Product Disclaimer: Littelfuse products are not designed for, and shall not be used for, any purpose (including, without limitation, automotive, military, aerospace, medical, life-saving, life-sustaining or nuclear facility applications, devices intended for surgical implant into the body, or any other application in which the failure or lack of desired operation of the product may result in personal injury, death, or property damage) other than those expressly set forth in applicable Littelfuse product documentation. Warranties granted by Littelfuse shall be deemed void for products used for any purpose not expressly set forth in applicable Littelfuse documentation. Littelfuse shall not be liable for any claims or damages arising out of products used in applications not expressly intended by Littelfuse as set forth in applicable Littelfuse documentation. The sale and use of Littelfuse products is subject to Littelfuse Terms and Conditions of Sale, unless otherwise agreed by Littelfuse. “Littelfuse” includes Littelfuse, Inc., and all of its affiliate entities. http://www.littelfuse.com/disclaimer-electronics.