SP3312T LITTELFUSE | Alldatasheet
Document overview
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Technical content
Features
- ESD, IEC 61000-4-2, ±30kV contact, ±30kV air
- EFT , IEC 61000-4-4, 40A p =5/50ns)
- Lightning, IEC 61000- 4-5 2nd Edition, 15A p =8/20µs)
- Low capacitance of 1 .3pF (TYP) per I/O
- Low leakage current of 0.01µA (TYP) at 3.3V
- Low variation in capacitance vs. bias voltage: 0.3pF Typical(V R=0 to 2.5V)
- AEC-Q101 qualified
- Moisture Sensitivity Level (MSL -1)
- 10/100/1000 Ethernet
- Integrated magnetics/ RJ45 connectors
- LAN/WAN Equipment
- Security Cameras
- Industrial Controls
- Notebook & Desktop Computers Functional Block Diagram Pin1 and 8 Pin2 and 7 Pin3 and 6 Pin4 and 5 Pinout Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. SP3312T Series 3.3V 15A Diode Array RoHS Pb GREEN Additional Information Datasheet SamplesResources
© 2016 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 09/20/16 TVS Diode Arrays (SPA® Diodes) Lightning Surge Protection- SP3312T Series SP4062 CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Absolute Maximum Ratings Symbol Parameter Value Units IPP Peak Current (tp=8/20μs) 15.0 A PPK Peak Pulse Power (tp=8/20µs) 250 W TOP Operating Temperature -40 to 125 ºC TSTOR Storage Temperature -55 to 150 °C Electrical Characteristics (TOP=25ºC) Parameter Symbol Test Conditions Min Typ Max Units Reverse Standoff Voltage VRWM 3.3 V Snap Back Voltage VSB ISB=50mA 2.8 V Reverse Leakage Current ILEAK VR=3.3V , I/O to GND 0.01 0.05 µA Clamp Voltage1 VC IPP=1A, tp=8/20µs, Fwd 6.0 V IPP=2A, tp=8/20µs, Fwd 7. 0 V IPP=10A, tp=8/20µs, Fwd 13.0 V Dynamic Resistance2 RDYN TLP , tp=100ns, I/O to GND 0.40 Ω ESD Withstand Voltage1 VESD IEC61000-4-2 (Contact) ±30 kV IEC61000-4-2 (Air) ±30 kV Variation in Capacitance with Reverse Bias Pins 1, 8 to 2, 7 and pins 3, 6 to 4, 5 VR= 0 to 2.5V , f= 1MHz 0.3 pF Diode Capacitance1 CI/O-GND Reverse Bias=0V 1. 3 pF Thermal Information Parameter Rating Units Storage Temperature Range -55 to 150 °C Maximum Junction Temperature 150 °C Maximum Lead Temperature (Soldering 20-40s) 260 °C Clamping Voltage vs IPP 0.0 5.0 10.0 15.0 20.0 0.05 .0 10.0 15.0 Clamp Voltage (VC) Peak Pulse Current-IPP (A) Note: 1 Parameter is guaranteed by design and/or device characterization. 2 Transmission Line Pulse (TLP) with 100ns width and 200ps rise time. Capacitance vs. Reverse Bias 0.0 0.3 0.6 0.9 1.2 1.5 Capacitance (pF) Bias Voltage (V)
© 2016 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 09/20/16 TVS Diode Arrays (SPA® Diodes) Lightning Surge Protection- SP3312T Series SP3312T T ransmission Line Pulsing (TLP) Plot 02468 10 12 14 16 TLP Voltage (V) TLP Current (A) 8/20 µs Pulse Waveform 10% 20% 30% 40% 50% 60% 70% 80% 90% 100% 110% Time (/uni03BCs) Percent of IPP Time Temperature TP TL TS(max) TS(min) tP tL tS time to peak temperature PreheatPreheat Ramp-upRamp-up Ramp-downRamp-do Critical Zone TL to TP Critical Zone TL to TP Reflow Condition Pb – Free assembly Pre Heat - Temperature Min (Ts(min)) 150°C - Temperature Max (Ts(max)) 200°C - Time (min to max) (ts) 60 – 180 secs Average ramp up rate (Liquidus) Temp (TL) to peak 3°C/second max TS(max) to TL - Ramp-up Rate 3°C/second max Reflow - Temperature (TL) (Liquidus) 217°C - Temperature (tL) 60 – 150 seconds Peak Temperature (TP) 260+0/-5 °C Time within 5°C of actual peak Temperature (tp) 20 – 40 seconds Ramp-down Rate 6°C/second max Time 25°C to peak Temperature (TP) 8 minutes Max. Do not exceed 260°C Soldering Parameters
Ordering Information
Part Number Package Marking Min. Order Qty. SP3312TUTG µDFN-08 33H 3000 Product Characteristics Lead Plating Pre-Plated Frame Lead Material Copper Alloy Lead Coplanarity 0.0004 inches (0.102mm) Substrate material Silicon Body Material Molded Epoxy Flammability UL 94 V-0 Notes : 1 . All dimensions are in millimeters 2. Dimensions include solder plating. 3. Dimensions are exclusive of mold flash & metal burr. 4. Blo is facing up for mold and facing down for trim/form, i.e. reverse trim/form. 5. Package surface matte finish VDI 11-13.
© 2016 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 09/20/16 TVS Diode Arrays (SPA® Diodes) Lightning Surge Protection- SP3312T Series Package Dimensions — µDFN-08 Package µDFN-08 (2.0x1 .0mm) JEDEC MO-229 Symbol Millimeters Inches Min Max Min Max A 0.45 0.55 0.018 0.022 A1 0 0.05 0.000 0.002 A3 Cancel Cancel b 0.2 0.3 0.008 0.012 D 1. 9 2.1 0.075 0.083 E 0.9 1. 1 0.035 0.043 R 0.1 BSC 0.004 BSC e 0.5 BSC 0.020 BSC L 0.3 0.4 0.012 0.016 Side View Top View Bottom View Embossed Carrier T ape & Reel Specification — µDFN-08 Part Numbering System Part Marking System SP 3312T U T G Series Package U= µDFN-08 T= Tape & Reel G= GreenTVS Diode Arrays (SPA Diodes 33 * Product Series 33 = SP3312T Assembly Site