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Technical content

Features

  • ESD, IEC61 000-4-2, ±30kV contact, ±30kV air
  • EFT , IEC61 000-4-4, 40A (tp=5/50ns)
  • Lightning, IEC61 000-4-5, 20A (tp=8/20µs)
  • Lo w capacitance of 3.5pF (TYP) per I/O
  • Lo w leakage current of 1µA (MAX) at 3.3V
  • 10/100/1000 Ethernet Interfaces
  • Customer Premise Equipment (CPE)
  • VoIP Phones
  • Set Top Boxes
  • PBX Systems Functional Block Diagram GND13 Pinout 13 5 7 9 GND Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. Application Example RJ-45 Connector *Package is shown as transparent Ethernet PHY Tx+ Tx- Rx- Rx+ SP3304N PHY SP3304N Series 3.3V 20A Diode Array RoHS Pb GREEN

©2012 Littelfuse, Inc. Specifications are subject to change without notice. Please refer to http://www.littelfuse.com for current information. TVS Diode Arrays (SPA™ Family of Products) Revision: August 14, 2012 TVS Diode Arrays (SPA™ Family of Products) Revision: August 14, 2012 Lightning Surge Protection - SP3304N Series SP3304N Series SP4062 CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Absolute Maximum Ratings Symbol Parameter Value Units IPP Peak Current (tp=8/20μs) 20.0 A PPK Peak Pulse Power (tp=8/20µs) 300 W TOP Operating Temperature -40 to 85 ºC TSTOR Storage Temperature -50 to 150 °C Electrical Characteristics (TOP=25ºC) Parameter Symbol Test Conditions Min Typ Max Units Reverse Standoff Voltage VRWM 3.3 V Snap Back Voltage VSB ISB=50mA 2.8 V Reverse Leakage Current ILEAK VR=2.5V , I/O to GND 0.5 1. 0 µA Clamp Voltage1 VC IPP=1A, tp=8/20µs, Fwd 6.0 V IPP=5A, tp=8/20µs, Fwd 7. 0 V IPP=10A, tp=8/20µs, Fwd 8.0 V IPP=20A, tp=8/20µs, Fwd 11. 5 V Dynamic Resistance R DYN (VC2-VC1)/(IPP2-IPP1) 0.25 Ω ESD Withstand Voltage1 VESD IEC61000-4-2 (Contact) ±30 kV IEC61000-4-2 (Air) ±30 kV Diode Capacitance1 CI/O-GND Reverse Bias=0V 3.5 5.0 pF Diode Capacitance1 CI/O-I/O Reverse Bias=0V 2.0 pF Note: 1. Parameter is guaranteed by design and/or device characterization. Thermal Information Parameter Rating Units Storage Temperature Range -65 to 150 °C Maximum Junction Temperature 150 °C Maximum Lead Temperature (Soldering 20-40s) 260 °C Clamping Voltage vs. IPPPulse Waveform 10% 20% 30% 40% 50% 60% 70% 80% 90% 100% 110% Time (/uni03BCs) Percent of IPP 0 5 10 15 20 Peak Pulse Current-IPP (A) 0.0 2.0 4.0 6.0 10.0 12.0 Clamp Voltage (VC) 8.0

3©2012 Littelfuse, Inc. Specifications are subject to change without notice. Please refer to www.littelfuse.com for current information. TVS Diode Arrays (SPA™ Family of Products) Revision: August 14, 2012 TVS Diode Arrays (SPA™ Family of Products) Revision: August 14, 2012 Lightning Surge Protection - SP3304N Series SP3304N SP3304N Capacitance vs. Bias Bias Voltage (V) Capacitance (pF) 0.0 1.0 2.0 3.0 4.0 5.0 Time Temperature TP TL TS(max) TS(min) tP tL tS time to peak temperature PreheatPreheat Ramp-upRamp-up Ramp-downRamp-do Critical Zone T L to TP Critical Zone TL to TP Reflow Condition Pb – Free assembly Pre Heat - Temperature Min (Ts(min)) 150°C - Temperature Max (Ts(max)) 200°C - Time (min to max) (ts) 60 – 180 secs Average ramp up rate (Liquidus) Temp (TL) to peak 3°C/second max TS(max) to TL - Ramp-up Rate 3°C/second max Reflow - Temperature (TL) (Liquidus) 217°C - Temperature (tL) 60 – 150 seconds Peak Temperature (TP) 260+0/-5 °C Time within 5°C of actual peak Temperature (t p) 20 – 40 seconds Ramp-down Rate 6°C/second max Time 25°C to peak Temperature (TP) 8 minutes Max. Do not exceed 260°C Soldering Parameters

Ordering Information

Part Number Package Marking Min. Order Qty. SP3304NUTG µDFN-10 UH4 3000 Part Numbering System Part Marking System SP 3304N U T G Series Package U= µDFN-10 T= Tape & Reel G= GreenSilicon Protection Array (SPA TM Family of TVS Diode Arrays U * 4 Product Series U = SP3304N Assembly Site Number of Channels Product Characteristics Lead Plating Pre-Plated Frame Lead Material Copper Alloy Lead Coplanarity 0.0004 inches (0.102mm) Substitute Material Silicon Body Material Molded Epoxy Flammability UL 94 V-0 Notes : 1 . All dimensions are in millimeters 2. Dimensions include solder plating. 3. Dimensions are exclusive of mold flash & metal burr. 4. Blo is facing up for mold and facing down for trim/form, i.e. reverse trim/form. 5. Package surface matte finish VDI 11-13.

©2012 Littelfuse, Inc. Specifications are subject to change without notice. Please refer to http://www.littelfuse.com for current information. TVS Diode Arrays (SPA™ Family of Products) Revision: August 14, 2012 TVS Diode Arrays (SPA™ Family of Products) Revision: August 14, 2012 Lightning Surge Protection - SP3304N Series SP3304N Series Package Dimensions — µDFN-10 Package µDFN-10 (2.6x2.6mm) JEDEC MO-229 Symbol Millimeters Inches Min Nom Max Min Nom Max A3 0.130 Ref 0.005 Ref e 0.50 BSC 0.020 BSC D E B Top View A A Bottom View 0.10 C b C Seating Plane Side View

0.10 C BM A

0.05 C e C Embossed Carrier T ape & Reel Specification — µDFN-10 (2.6x2.6mm) T B0K0 P2 D0 E F W 5º MAX A0 5º MAX User Feeding Direction Pin 1 Location Symbol Millimeters A0 2.82 +/- 0.05 B0 2.82 +/- 0.05 D0 Ø1 .50 + 0.10 D1 Ø 0.50 + 0.05 E 1 .75 +/- 0.10 F 3.50 +/- 0.05 K0 0.76 +/- 0.05 P0 4.00 +/- 0.10 P1 4.00 +/- 0.10 P2 2.00 +/- 0.05 T 0.25 +/- 0.02 Recommended Solder Pads µDFN-10L 2.6x2.6mm B C F XP G Z Y Dimension Symbol Millimeters Inches B 2.30 0.091 C 2.20 0.087 F 1 .41 0.056 G 1 .65 0.065 P 0.50 0.020 X 0.37 0.015 Y 0.55 0.022 Z 2.75 0.108