SP3042 LITTELFUSE | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 4

Technical content

Features

Applications

The SP3042 includes back-to-back TVS diodes fabricated in a proprietary silicon avalanche technology to provide protection for electronic equipment that may experience destructive electrostatic discharges (ESD). These robust diodes can safely absorb repetitive ESD strikes up to the maximum level specified in the IEC 61000-4-2 international standard (±30kV contact discharge) without performance degradation. The back-to-back configuration provides symmetrical ESD protection for data lines when AC signals are present and the low loading capacitance makes it ideal for protecting high speed data lines such as HDMI,USB2.0, USB3.0 and eSATA.

  • ESD protection of ±30kV contact discharge, ±30kV air discharge, (IEC 61000-4-2)
  • EFT , IEC 61000-4-4, 40A (5/50ns)
  • Lightning, IEC 61000- 4-5 2nd edition, 2A p=8/20µs)
  • Low capacitance of 0.35pF @ VR=0V (TYP)
  • Low leakage current of 100nA at 5.3V (MAX)
  • Space efficient 01005 footprint
  • Lead free and RoHS compliant
  • USB 3.0/USB 2.0/MHL
  • MIPI Camera and Display
  • HDMI 2.0, DisplayPort 1 .3, eSATA
  • IoT Modules
  • Smart Phones
  • External Storage
  • Ultrabooks, Notebooks
  • Tablets, eReaders
  • Security Modules Functional Block Diagram 1 2 Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. RoHS Pb GREENSP3042 Series 0.35pF 30kV Bidirectional Discrete TVS Pinout

0201 Flipchip

©2016 Littelfuse, Inc. Specifications are subject to change without notice. TVS Diode Arrays (SPA ® Diodes) Revision: 10/26/16 TVS Diode Arrays (SPA® Diodes) Low Capacitance ESD Protection - SP3042 Series SP3021 CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Absolute Maximum Ratings Symbol Parameter Value Units PPK Peak Pulse Power (tP=8/20µs) 20 W IPP Peak Current (tp=8/20μs) 2.0 A TOP Operating Temperature -40 to 125 °C Thermal Information Parameter Rating Units Storage Temperature Range -55 to 150 °C Maximum Junction Temperature 150 °C Maximum Lead Temperature (Soldering 20-40s) 260 °C Electrical Characteristics (TOP=25ºC) Parameter Symbol Test Conditions Min Typ Max Units Reverse Standoff Voltage VRWM 5.3 V Reverse Breakdown Voltage VBR 1R=1mA 7. 8 V Reverse Leakage Current ILEAK VR=5.3V 100 nA Clamp Voltage1 VC IPP=1A, tp=8/20µs, Fwd 12.5 V Dynamic Resistance2 RDYN TLP , tp=100ns, I/O to GND 0.5 Ω ESD Withstand Voltage1 VESD IEC 61000-4-2 (Contact) ±30 kV IEC 61000-4-2 (Air) ±30 kV Diode Capacitance1 CD Reverse Bias=0V 0.35 0.5 pF 8/20μS Pulse Waveform 10% 20% 30% 40% 50% 60% 70% 80% 90% 100% 110% Time (/uni03BCs) Pe rcen t of IPP Note: 1 Parameter is guaranteed by design and/or device characterization.

2 Transmission Line Pulse (TLP) with 100ns width, 2ns rise time, and average window t1=70ns to t2= 90ns

Capacitance vs Reverse Bias 0.0 0.1 0.2 0.3 0.4 0.5 012345 Capacitance (pF) Bias Voltage (V)

©2016 Littelfuse, Inc. Specifications are subject to change without notice. TVS Diode Arrays (SPA ® Diodes) Revision: 10/26/16 TVS Diode Arrays (SPA® Diodes) Low Capacitance ESD Protection - SP3042 Series Soldering Parameters Time Temperature TP TL TS(max) TS(min) tP tL tS time to peak temperature PreheatPreheat Ramp-upRamp-up Ramp-downRamp-do Critical Zone T L to TP Critical Zone TL to TP Reflow Condition Pb – Free assembly Pre Heat - Temperature Min (Ts(min)) 150°C - Temperature Max (Ts(max)) 200°C - Time (min to max) (ts) 60 – 180 secs Average ramp up rate (Liquidus) Temp (TL) to peak 3°C/second max TS(max) to TL - Ramp-up Rate 3°C/second max Reflow - Temperature (TL) (Liquidus) 217°C - Temperature (tL) 60 – 150 seconds Peak Temperature (TP) 260+0/-5 °C Time within 5°C of actual peak Temperature (tp) 20 – 40 seconds Ramp-down Rate 6°C/second max Time 25°C to peak Temperature (TP) 8 minutes Max. Do not exceed 260°C Notes : 1 . All dimensions are in millimeters 2. Dimensions include solder plating. 3. Dimensions are exclusive of mold flash & metal burr. 4. Blo is facing up for mold and facing down for trim/form, i.e. reverse trim/form. 5. Package surface matte finish VDI 11-13. Product Characteristics of 01005 Flipchip Lead Plating Sn Lead Material Copper Lead Coplanarity 6µm(max) Substrate material Silicon Body Material Silicon 05 10 15 20 25 30 TLP Voltage (V) TLP Current (A) Part Number Package Marking Min. Order Qty. Packaging Option P0/P1 Packaging Specification SP3042-01WTG 01005 Flipchip + 15000 Tape & Reel – 8mm tape/7” reel 4mm/2mm EIA RS-481

Ordering Information

-40 -35 -30 -25 -20 -15 -10 TLP Voltage (V) TLP Current (A) Positive T ransmission Line Pulsing (TLP) Plot Negative T ransmission Line Pulsing (TLP) Plot

©2016 Littelfuse, Inc. Specifications are subject to change without notice. TVS Diode Arrays (SPA ® Diodes) Revision: 10/26/16 TVS Diode Arrays (SPA® Diodes) Low Capacitance ESD Protection - SP3042 Series Embossed Carrier T ape & Reel Specification — 01005 Flipchip Symbol Millimeters A0 0.30+/-0.03 B0 0.51+/-0.03 K0 0.20 + 0.03 F 3.50 +/- 0.05 P1 2.00+/-0.10 W 8.00+/-0.10 Package Dimensions — 01005 Flipchip Symbol

01005 Flipchip

e 0.280 BSC 0.011 BSC F G e P A E D Top View Bottom View Side View Pin 1 0.15mm 0.23mm 0.30mm 0.15mm 0.23mm 0.30mm 0.15mm Recommended soldering pad layout Stencil apertures Part Numbering System SP 3042 01 W T G Series Number of Channels Package T= Tape & Reel G= Green TVS Diode Arrays (SPA Diodes) W: 01005 Flipchip Part Marking System