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Technical content

Features

Applications

The SP3021 includes back-to-back TVS diodes fabricated in a proprietary silicon avalanche technology to provide protection for electronic equipment that may experience destructive electrostatic discharges (ESD). These robust diodes can safely absorb repetitive ESD strikes up to the maximum level specified in the IEC61000-4-2 international standard without performance degradation. The back-to- back configuration provides symmetrical ESD protection for data lines when AC signals are present.

  • ESD protection of ±8kV contact discharge, ±15kV air discharge, (IEC61000-4-2)
  • EFT , IEC61000-4-4, 40A (5/50ns)
  • Lightning protection, IEC61000-4-5, 2A p=8/20µs)
  • Low capacitance of 0.5pF @ VR=0V
  • Low leakage current of 1μA at 5V
  • 0402 small footprint available
  • USB 3.0/USB 2.0
  • MHL/MIPI/MDDI
  • HDMI, Display Port, eSATA
  • Set Top Boxes, Game Consoles
  • Smart Phones
  • External Storage
  • Ultrabooks, Notebooks
  • Tablets, eReaders Pinout Functional Block Diagram 1 2 Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. RoHS Pb GREEN USB3.0 Application Example SP3021 Series 0.5pF 8kV Bidirectional Discrete TVS USB Port USB Controller Signal Ground IC *Packages are shown as transparent SP1003 SSTX+ SSTX- SSRX+ SSRX- VBUS SP3021x6 Pin 1

©2012 Littelfuse, Inc. Specifications are subject to change without notice. Please refer to www.littelfuse.com/SPA for current information. TVS Diode Arrays (SPA™ Family of Products) Revision: June 4, 2012 SP3021 Series Low Capacitance ESD Protection - SP3021 Series SP3021 CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Absolute Maximum Ratings Symbol Parameter Value Units IPP Peak Current (tp=8/20μs) 2.0 A TOP Operating Temperature -40 to 85 °C TSTOR Storage Temperature -50 to 150 °C Thermal Information Parameter Rating Units Storage Temperature Range -65 to 150 °C Maximum Junction Temperature 150 °C Maximum Lead Temperature (Soldering 20-40s) 260 °C Electrical Characteristics (TOP=25ºC) Parameter Symbol Test Conditions Min Typ Max Units Reverse Standoff Voltage VRWM 5.0 V Reverse Breakdown Voltage VBR 1R=1mA 7. 0 V Reverse Leakage Current ILEAK VR=5V 1 µA Clamp Voltage1 VC IPP=1A, tp=8/20µs, Fwd 13.1 V IPP=2A, tp=8/20µs, Fwd 14.7 V Dynamic Resistance RDYN (VC2-VC1)/(IPP2-IPP1) 1. 6 Ω ESD Withstand Voltage1 VESD IEC61000-4-2 (Contact) ±8 kV IEC61000-4-2 (Air) ±15 kV Diode Capacitance1 CD Reverse Bias=0V 0.5 pF Note: 1 . Parameter is guaranteed by design and/or device characterization. Capacitance vs. Bias Voltage -10 -15 -20 -25 -30 -35 Attenuation (dB) Frequency (MHz) 10 100 1000 Insertion Loss (S21) I/O to GND Capacitance (pF) DC Bias (V) 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 012345 Pulse Waveform 10% 20% 30% 40% 50% 60% 70% 80% 90% 100% 110% Time (μs ) Percent of IPP T ransmission Line Pulsing(TLP) Plot TLP Voltage (V) TLP Current (A)

3©2012 Littelfuse, Inc. Specifications are subject to change without notice. Please refer to www.littelfuse.com/SPA for current information. TVS Diode Arrays (SPA™ Family of Products) Revision: June 4, 2012 SP3021 Series SP3021 Low Capacitance ESD Protection - SP3021 Series Soldering Parameters Time Temperature TP TL TS(max) TS(min) tP tL tS time to peak temperature PreheatPreheat Ramp-upRamp-up Ramp-downRamp-do Critical Zone T L to TP Critical Zone TL to TP Reflow Condition Pb – Free assembly Pre Heat - Temperature Min (Ts(min)) 150°C - Temperature Max (Ts(max)) 200°C - Time (min to max) (ts) 60 – 180 secs Average ramp up rate (Liquidus) Temp (TL) to peak 3°C/second max TS(max) to TL - Ramp-up Rate 3°C/second max Reflow - Temperature (TL) (Liquidus) 217°C - Temperature (tL) 60 – 150 seconds Peak Temperature (TP) 260+0/-5 °C Time within 5°C of actual peak Temperature (t p) 20 – 40 seconds Ramp-down Rate 6°C/second max Time 25°C to peak Temperature (TP) 8 minutes Max. Do not exceed 260°C

Ordering Information

Part Number Package Marking Min. Order Qty. SP3021-01ETG SOD882 •e 3000 Product Characteristics Lead Plating Pre-Plated Frame or Matte Tin Lead Material Copper Alloy Lead Coplanarity 0.0004 inches (0.102mm) Substitute Material Silicon Body Material Molded Epoxy Flammability UL 94 V-0 Notes : 1 . All dimensions are in millimeters 2. Dimensions include solder plating. 3. Dimensions are exclusive of mold flash & metal burr. 4. Blo is facing up for mold and facing down for trim/form, i.e. reverse trim/form. 5. Package surface matte finish VDI 11-13. Part Numbering System Part Marking System SP 3021 01 E T G Series Number of Channels Package T= Tape & Reel G= Green Silicon Protection Array (SPA TM Family of TVS Diode Arrays E: SOD882 e SOD882 Product IDPin 1 Indicator

©2012 Littelfuse, Inc. Specifications are subject to change without notice. Please refer to www.littelfuse.com/SPA for current information. TVS Diode Arrays (SPA™ Family of Products) Revision: June 4, 2012 SP3021 Series Low Capacitance ESD Protection - SP3021 Series Recommanded Soldering Pad Layout Embossed Carrier T ape & Reel Specification — SOD882 Symbol Millimeters A0 0.70+/-0.045 B0 1 .10+/-0.045 K0 0.65+/-0.045 F 3.50+/-0.05 P1 2.00+/-0.10 Notes : 1 . All dimensions are in millimeters Symbol JEDEC MO-236 Millimeters Inches Min Typ Max Min Typ Max D 0.45 0.018