SP3012-06UTG

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Document overview

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Technical content

Features

• ESD, IEC61000-4-2, ±12kV contact, ±25kV air
• EFT , IEC61000-4-4, 40A P=5/50ns)
• Lightning, IEC61000-4-5, 4A (t P=8/20μs)
• Low capacitance of 0.5pF (TYP) per I/O
• Low leakage current of 1 .5μA (MAX) at 5V
• Small form factor μDFN (JEDEC MO- 229) package provides flow through routing to simplify PCB layout
• LCD/PDP TVs
• External Storages
• DVD/Blu-ray Players
• Desktops
• MP3/PMP
• Set Top Boxes
• Smartphones
• Ultrabooks/Notebooks
• Digital Cameras Pinout 5 4 3 2 1 6 7 8 9 10 *Pins 6, 7 , 9, 10 are not internally connected but should be connected to the trace. Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. RoHS Pb GREEN *Pins 1, 2, 3, 4, 5, 6, 7 are not internally connected but should be connected to the opposite pin with the PCB trace. SP3012-06UTG SP3012-04UTG SP3012 Series 0.5pF Diode Array Functional Block Diagram GND (Pins 3,8) Pin 5 Pin 2 Pin 1 Pin 4 GND (Pins 3,8) Pin 5 Pin 2 Pin 1 Pin 4 SP3012-04UTG SP3012-06UTG Signal GND USB ControllerUSB Port VBUS SSTX+ SSTX- SSRX+ SSRX- GND SP3012-06UTG ICAdditional Information Datasheet Resources Samples

© 2013 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 04/24/13 TVS Diode Arrays (SPA® Diodes) Low Capacitance ESD Protection - SP3012 Series SP3012 CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Absolute Maximum Ratings Symbol Parameter Value Units IPP Peak Current (tp=8/20μs) 4.0 A TOP Operating Temperature –40 to 125 °C TSTOR Storage Temperature –55 to 150 °C Electrical Characteristics (TOP=25ºC) Parameter Symbol Test Conditions Min Typ Max Units Reverse Standoff Voltage VRWM IR ≤ 1µA 5.0 V Reverse Leakage Current ILEAK VR=5V , Any I/O to GND 1. 5 µA Clamp Voltage1 VC IPP=1A, tp=8/20µs, Fwd 6.6 V IPP=2A, tp=8/20µs, Fwd 7. 0 V Dynamic Resistance RDYN (VC2 - VC1) / (IPP2 - IPP1) 0.4 Ω ESD Withstand Voltage1 VESD IEC61000-4-2 (Contact) ±12 kV IEC61000-4-2 (Air) ±25 kV Diode Capacitance1 CI/O-GND Reverse Bias=0V , f=1 MHz 0.5 pF Diode Capacitance1 CI/O-/O Reverse Bias=0V , f=1 MHz 0.3 pF Note: 1 Parameter is guaranteed by design and/or device characterization. Insertion Loss (S21) I/O to GNDCapacitance vs. Bias Voltage Clamping Voltage vs. IPP Bias Voltage (V) Capacitance (pF) 0.0 0.2 0.4 2.03 .0 4.05 .0 0.6 0.8 1.0 0.0 2.0 4.0 6.0 8.0 10.0 1234 Clamp Voltage (V) Current (A) -30 -18 -15 -12 Attenuation (dB) -21 -24 -27 100 1000Frequency (MHz) 0 1 2 3 4 5 6 7 8 9 10 11 TLP Voltage (V) TLP Cur rent (A) T ransmission Line Pulsing(TLP) Plot

© 2013 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 04/24/13 TVS Diode Arrays (SPA® Diodes) Low Capacitance ESD Protection - SP3012 Series Time Temperature TP TL TS(max) TS(min) tP tL tS time to peak temperature PreheatPreheat Ramp-upRamp-up Ramp-downRamp-do Critical Zone TL to TP Critical Zone TL to TP Reflow Condition Pb – Free assembly Pre Heat - Temperature Min (Ts(min)) 150°C - Temperature Max (Ts(max)) 200°C - Time (min to max) (ts) 60 – 180 secs Average ramp up rate (Liquidus) Temp (TL) to peak 3°C/second max TS(max) to TL - Ramp-up Rate 3°C/second max Reflow - Temperature (TL) (Liquidus) 217°C - Temperature (tL) 60 – 150 seconds Peak Temperature (TP) 260+0/-5 °C Time within 5°C of actual peak Temperature (t p) 20 – 40 seconds Ramp-down Rate 6°C/second max Time 25°C to peak Temperature (TP) 8 minutes Max. Do not exceed 260°C Soldering Parameters Product Characteristics Lead Plating Pre-Plated Frame Lead Material Copper Alloy Lead Coplanarity 0.0004 inches (0.102mm) Substitute Material Silicon Body Material Molded Epoxy Flammability UL 94 V-0 Notes : 1 . All dimensions are in millimeters 2. Dimensions include solder plating. 3. Dimensions are exclusive of mold flash & metal burr. 4. Blo is facing up for mold and facing down for trim/form, i.e. reverse trim/form. 5. Package surface matte finish VDI 11-13. Part Numbering System Part Marking System SP 3012 xx U T G Series Package µDFN-10 (2.5x1.0mm) T= Tape & Reel G= Green Number of Channels TVS Diode Arrays (SPA Diodes) µDFN-14 (3.5x1.35mm) 04 = 4 channel 06 = 6 channel V * * Product Series V = SP3012 Assembly Site Number of Channels 4 = 4 channel 6 = 6 channel Part Number Package Marking Min. Order Qty. SP3012-04UTG µDFN-10 V*4 3000 SP3012-06UTG µDFN-14 V*6 3000

Ordering Information

Pulse Waveform Power Derating Curve 10% 20% 30% 40% 50% 60% 70% 80% 90% 100% 110% Time (μs ) Percent of IPP 100 110 02 55 07 51 00 1251 50 Ambient Temperature-TA (oC) % of Rated Power or IPP

© 2013 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 04/24/13 TVS Diode Arrays (SPA® Diodes) Low Capacitance ESD Protection - SP3012 Series Package Dimensions— µDFN-10 (2.5x1.0x0.5mm) Package µDFN-10 (2.5x1.0x0.5mm) JEDEC MO-229 Symbol Millimeters Inches Min Nom Max Min Nom Max A1 0.00 -- 0.05 0.000 0.022 A3 0.125 Ref 0.005 Ref e 0.50 BSC 0.020 BSC D E B Top View A A Bottom View 0.05 C b C Seating Plane Side View

0.10 C AM B

0.05 CM L e 2xR0.075mm (7x) R0.125 0.05 C X P Z (C) G Y (Y1) Soldering Pad Layout Recomended D E B Top View A A Bottom View 0.05 C b C Seating Plane Side View 0.05 CM L e 2xR0.075mm (7x) R0.125 0.05 C X P Z (C) G Y (Y1) Soldering Pad Layout RecomendedSoldering Pad Layout Dimensions Inch Millimeter C (0.034) (0.875) G 0.008 0.20 P 0.020 0.50 P1 0.039 1. 0 0 X 0.008 0.20 X1 0.016 0.40 Y 0.027 0.675 Y1 (0.061) (1 .55) Z 0.061 1 .55 X P Z (C) G Y (Y1) Soldering Pad Layou t Alternative Embossed Carrier T ape & Reel Specification— µDFN-10 Package µDFN-10 (2.5x1.0x0.5mm) Symbol Millimeters A0 1 .30 ± 0.10 B0 2.83 ± 0.10 D0 Ø 1 .50 + 0.10 D1 Ø 1 .00 + 0.25 E 1 .75 ± 0.10 F 3.50 ± 0.05 K0 0.65 ± 0.10 P0 4.00 ± 0.10 P1 4.00 ± 0.10 P2 2.00 ± 0.05 T 0.254 ± 0.02 T F E W 5º Max 5º Max User Feeding Direction Pin 1 Location

© 2013 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 04/24/13 TVS Diode Arrays (SPA® Diodes) Low Capacitance ESD Protection - SP3012 Series Package Dimensions — µDFN-14 (3.5x1.35x0.5mm) µDFN-14 (3.5x1.35x0.5mm) JEDEC MO-229 Symbol Millimeters Inches Min Nom Max Min Nom Max A2 0.203 Ref 0.008 Ref D2 - - - - - - E1 - - - - - - e 0.500 BSC 0.020 BSC D E B Top View A Bottom View Side View PIN 1 Index Area 1 2 3 4 A C b A1 A2 Seating Plane Pin 1 Identification Chamfer 0.10X45º Notes: 1 . Dimension and tolerancing comform to ASME Y14.5M-1994. 2. Controlling dimensions: Millimeter. Converted Inch dimensions are not necessarily exact. Soldering Pad Layout Recomended Symbol Millimeter Inches Soldering Pad Layout Dimensions Symbol Millimeters Inches Min Nom Max Min Nom Max e 0.50 typ 0.020 typ Embossed Carrier T ape & Reel Specification — µDFN-14 Symbol Millimeters A0 1 .58 ± 0.10 B0 3.73 ± 0.10 D0 0.60 + 0.05 D1 Ø 0.60 + 0.05 E 1 .75 ± 0.10 F 5.50 ± 0.05 K0 0.68 ± 0.10 P0 2.00 ± 0.05 P1 4.00 ± 0.10 P2 4.00 ± 0.10 T 0.28 ± 0.02 P0 D0 E F W T B0K0 User Feeding Direction Pin 1 Location