SP12-01WTG-C-HV

SPXX LITTELFUSE | Alldatasheet

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SPxx Series 100W Discrete Bidirectional TVS Diode Pinout Functional Block Diagram Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. 1 2

• LED Lighting Modules
• Portable Instrumentation
• General Purpose I/O
• Mobile & Handhelds
• RS232 / RS485
• CAN bus
• ESD, IEC 61000-4-2, ±30kV contact, ±30kV air
• EFT , IEC 61000-4-4, 40A (5/50ns)
• IEC 61000-4-5, 2nd Edition: 8/20 Surge, 8A Surge Immunity. SP12- 01WTG-C-HV .
• Low clamping voltage
• Low leakage current
• Halogen free, Lead free and RoHS compliant RoHS Pb GREEN Additional Information Datasheet SamplesResources

© 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 05/02/17 TVS Diode Arrays (SPA® Diodes)TVS Diode Arrays (SPA® Diodes) General Purpose ESD Protection - SPxx-01WTG-C-HV Series Notes: CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the component. This is a stress only rating and operation of the component at these or any other conditions above those indicated in the operational sections of this specification is not implied. Absolute Maximum Ratings Symbol Parameter Value Units Ppk Peak Pulse Power (tp=8/20μs) 100 W TOP Operating Temperature -40 to 125 °C TSTOR Storage Temperature -55 to 150 °C Thermal Information Parameter Rating Units Maximum Junction Temperature 150 °C Maximum Lead Temperature (Soldering 20-40s) 260 °C Parameter Symbol T est Conditions Min Ty p Max Units Reverse Standoff Voltage VRWM IR≤1μA, 1 pin to GND 12.0 V Reverse Breakdown Voltage VBR IR=1mA, 1 pin to GND 13.3 V Leakage Current ILEAK VR=12V , 1 pin to GND 0.1 μA Clamp Voltage1 VC IPP=1A, tp=8/20µs, Fwd 16 V IPP=8A, tP=8/20μs, Fwd 19 V Dynamic Resistance2 RDYN TLP , tp=100ns, 1 pin to GND 0.4 Ω Peak Pulse Current Ipp tp=8/20µs 8.0 A ESD Withstand Voltage1 VESD IEC61000-4-2 (Contact Discharge) ±30 kV IEC61000-4-2 (Air Discharge) ±30 kV Diode Capacitance1 CD-GND Reverse Bias=0V , f=1MHz 26 30 pF Parameter Symbol T est Conditions Min Ty p Max Units Reverse Standoff Voltage VRWM IR≤1μA, 1 pin to GND 15.0 V Reverse Breakdown Voltage VBR IR=1mA, 1 pin to GND 16.7 V Leakage Current ILEAK VR=15V , 1 pin to GND 0.1 μA Clamp Voltage1 VC IPP=1A, tp=8/20µs, Fwd 21 V IPP=5A, tp=8/20µs, Fwd 27 V Dynamic Resistance2 RDYN TLP , tp=100ns, 1 pin to GND 0.43 Ω Peak Pulse Current Ipp tp=8/20µs 5.0 A ESD Withstand Voltage1 VESD IEC61000-4-2 (Contact Discharge) ±30 kV IEC61000-4-2 (Air Discharge) ±30 kV Diode Capacitance1 CI/O-GND Reverse Bias=0V , f=1MHz 21 24 pF Note: 1 Parameter is guaranteed by design and/or component characterization. 2 Transmission Line Pulse (TLP) test setting : Std.TDR(50Ω),tp=100ns, tr=0.2ns ITLP and VTLP averaging window: start t1=70ns to end t2=80ns Note: 1 Parameter is guaranteed by design and/or component characterization. 2 Transmission Line Pulse (TLP) test setting : Std.TDR(50Ω),tp=100ns, tr=0.2ns ITLP and VTLP averaging window: start t1=70ns to end t2=80ns

© 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 05/02/17 TVS Diode Arrays (SPA® Diodes)TVS Diode Arrays (SPA® Diodes) General Purpose ESD Protection - SPxx-01WTG-C-HV Series Parameter Symbol T est Conditions Min Ty p Max Units Reverse Standoff Voltage VRWM IR≤1μA, 1 pin to GND 24.0 V Reverse Breakdown Voltage VBR IR=1mA, 1 pin to GND 26.7 V Leakage Current ILEAK VR=24V , 1 pin to GND 0.1 μA Clamp Voltage1 VC IPP=1A, tp=8/20µs, Fwd 32 V IPP=3.0A, tp=8/20µs, Fwd 40 V Dynamic Resistance2 RDYN TLP , tp=100ns, 1 pin to GND 0.7 Ω Peak Pulse Current Ipp tp=8/20µs 3.0 A ESD Withstand Voltage1 VESD IEC61000-4-2 (Contact Discharge) ±18 kV IEC61000-4-2 (Air Discharge) ±24 kV Diode Capacitance1 CI/O-GND Reverse Bias=0V , f=1MHz 13 17 pF Parameter Symbol T est Conditions Min Ty p Max Units Reverse Standoff Voltage VRWM IR≤1μA, 1 pin to GND 36.0 V Reverse Breakdown Voltage VBR IR=1mA, 1 pin to GND 40.0 V Leakage Current ILEAK VR=36V , 1 pin to GND 0.1 μA Clamp Voltage1 VC IPP=1A, tp=8/20µs, Fwd 48 V Dynamic Resistance2 RDYN TLP , tp=100ns, 1 pin to GND 1. 4 Ω Peak Pulse Current Ipp tp=8/20µs 1. 5 A ESD Withstand Voltage1 VESD IEC61000-4-2 (Contact Discharge) ±10 kV IEC61000-4-2 (Air Discharge) ±15 kV Diode Capacitance1 CI/O-GND Reverse Bias=0V , f=1MHz 10 13 pF Power Derating Curve 100 110 02 55 07 51 00 1251 50 Ambient Temperature - TA (oC) % of Rated Power I PP Note: 1 Parameter is guaranteed by design and/or component characterization. 2 Transmission Line Pulse (TLP) test setting : Std.TDR(50Ω),tp=100ns, tr=0.2ns ITLP and VTLP averaging window: start t1=70ns to end t2=80ns Note: 1 Parameter is guaranteed by design and/or component characterization. 2 Transmission Line Pulse (TLP) test setting : Std.TDR(50Ω),tp=100ns, tr=0.2ns ITLP and VTLP averaging window: start t1=70ns to end t2=80ns

© 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 05/02/17 TVS Diode Arrays (SPA® Diodes)TVS Diode Arrays (SPA® Diodes) General Purpose ESD Protection - SPxx-01WTG-C-HV Series 0 10 20 30 40 50 60 TLP Current (A) TLP Volts (V) SP15-01WTG-C-HV T ransmission Line Pulsing(TLP) Plot 01 02 03 04 05 0 TLP Current (A) TLP Volts (V) SP12-01WTG-C-HV T ransmission Line Pulsing(TLP) Plot Pulse Waveform 10% 20% 30% 40% 50% 60% 70% 80% 90% 100% 110% Time (/uni03BCs) Percent of IPP 02 04 06 08 01 00 120 TLP Current (A) TLP Volts (V) SP36-01WTG-C-HV T ransmission Line Pulsing(TLP) Plot 01 02 03 04 05 06 07 08 0 TLP Current (A) TLP Volts (V) SP24-01WTG-C-HV T ransmission Line Pulsing(TLP) Plot

© 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 05/02/17 TVS Diode Arrays (SPA® Diodes)TVS Diode Arrays (SPA® Diodes) General Purpose ESD Protection - SPxx-01WTG-C-HV Series Time Temperature TP TL TS(max) TS(min) tP tL tS time to peak temperature PreheatPreheat Ramp-upRamp-up Ramp-downRamp-do Critical Zone TL to TP Critical Zone TL to TP Reflow Condition Pb – Free assembly Pre Heat - Temperature Min (Ts(min)) 150°C - Temperature Max (Ts(max)) 200°C - Time (min to max) (ts) 60 – 180 secs Average ramp up rate (Liquidus) Temp (TL) to peak 3°C/second max TS(max) to TL - Ramp-up Rate 3°C/second max Reflow - Temperature (TL) (Liquidus) 217°C - Temperature (tL) 60 – 150 seconds Peak Temperature (TP) 260+0/-5 °C Time within 5°C of actual peak Temperature (t p) 20 – 40 seconds Ramp-down Rate 6°C/second max Time 25°C to peak Temperature (TP) 8 minutes Max. Do not exceed 260°C Soldering Parameters Ordering InformationProduct Characteristics Lead Plating Pre-Plated Frame Lead Material Copper Alloy Lead Coplanarity 0.0004 inches (0.102mm) Substitute Material Silicon Body Material Molded Epoxy Flammability UL 94 V-0 Notes : 1 . All dimensions are in millimeters 2. Dimensions include solder plating. 3. Dimensions are exclusive of mold flash & metal burr. 4. Blo is facing up for mold and facing down for trim/form, i.e. reverse trim/form. 5. Package surface matte finish VDI 11-13. Part Number Package Marking Min. Order Qty. SP12-01WTG-C-HV FLIPCHIP 2 10000 SP15-01WTG-C-HV FLIPCHIP 5 10000 SP24-01WTG-C-HV FLIPCHIP 4 10000 SP36-01WTG-C-HV FLIPCHIP 6 10000 Part Numbering SystemPart Marking System SP** T G Voltage Package T= Tape & Reel G= Green TVS Diode Arrays (SPA Diodes W:Flipchip W –C Bidirectional –HV High Voltage -01 Number of Channels 2: SP12-01WTG-C-HV 5: SP15-01WTG-C-HV 4: SP24-01WTG-C-HV 6: SP36-01WTG-C-HV

© 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 05/02/17 TVS Diode Arrays (SPA® Diodes)TVS Diode Arrays (SPA® Diodes) General Purpose ESD Protection - SPxx-01WTG-C-HV Series Package Dimensions — FLIPCHIP Symbol Package FLIPCHIP JEDEC MO-236 Millimeters Inches Min Typ Max Min Typ Max D2 0.400 REF 0.016 REF Embossed Carrier T ape & Reel Specification — FLIPCHIP A0 K0 B0 T P2P1 D E FW Symbol Millimeters A0 0.41+/-0.03 B0 0.70+/-0.03 D ø 1 .50 + 0.10 D1 ø 0.20 +/- 0.05 E 1 .75+/-0.10 F 3.50+/-0.05 K0 0.38+/-0.03 P0 4.00+/-0.10 P1 2.00+/-0.05 P2 2.00+/-0.05 T 0.23+/-0.02