SP1103C

SP1103C LITTELFUSE | Alldatasheet

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Technical content

TVS Diode Arrays Datasheet © 2022 Littelfuse, Inc. Specifications are subject to change without notice. Revised: GD. 01/03/22 SP1103C 80A Discrete Bidirectional TVS Diode

Description

Applications

The SP1103C includes TVS diodes fabricated in a proprietary silicon avalanche technology protect each I/O pin to provide a high level of protection for electronic equipment that may experience destructive electrostatic discharges (ESD). These robust diodes can safely absorb repetitive ESD strikes at ±30kV (contact discharge, IEC 61000-4-2) without performance degradation. Additionally, each diode can safely dissipate 80A of 8/20μs surge current (IEC 61000-4-5, 2nd edition) with very low clamping voltages. Features and Benefits ■ ESD, IEC 61000-4-2, ±30kV contact, ±30kV air ■ EFT , IEC 61000-4-4, 40A (5/50ns) ■ Lightning, IEC 61000-4-5 2nd edition, 80A (tP=8/20μs) ■ Low clamping voltage ■ Low leakage current ■ AEC-Q101 qualified ■ Moisture Sensitivity Level(MSL -1) ■ Halogen free, Lead free and RoHS compliant ■ Switches / Buttons ■ Test Equipment / Instrumentation ■ Point-of-Sale Terminals ■ Medical Equipment ■ Notebooks / Desktops / Servers ■ Computer Peripherals ■ Automotive Electronics Pinout and Functional Block Diagram Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. RoHS Pb PIN 1 PIN 2

TVS Diode Arrays Datasheet © 2022 Littelfuse, Inc. Specifications are subject to change without notice. Revised: GD. 01/03/22 SP1103C 80A Discrete Bidirectional TVS Diode Absolute Maximum Ratings Symbol Parameter Value Units Ppk Peak Pulse Power (tp=8/20μs) 720 W TOP Operating Temperature -40 to 125 °C TSTOR Storage Temperature -55 to 150 °C Parameter Symbol T est Conditions Min Ty p Max Units Reverse Standoff Voltage VRWM - - - 3.3 V Breakdown Voltage VBR IR=1mA 3.4 3.8 5.0 V Reverse Leakage Current ILEAK VR=3.3V - - 1. 0 μA Clamp Voltage1 VC IPP=40A, tp=8/20µs, Fwd - 6 - V IPP=80A, tP=8/20μs, Fwd - 9 - V Dynamic Resistance2 RDYN TLP , tP=100ns, I/O to GND - 0.01 - Ω Peak Pulse Current Ipp tp=8/20µs - - 80 A ESD Withstand Voltage1 VESD IEC 61000-4-2 (Contact Discharge) ±30 - - kV IEC 61000-4-2 (Air Discharge) ±30 - - kV Diode Capacitance1 CD Reverse Bias=0V , f=1MHz - 130 - pF Note: 1. Parameter is guaranteed by design and/or component characterization. 2.Transmission Line Pulse (TLP) with 100ns width, 2ns rise time, and average window t1=70ns to t2= 90ns I-V Curve Characteristics VR Stand-off Voltage -- Maximum voltage that can be applied to the TVS without operation VBR Breakdown Voltage -- Maximum voltage that flows though the TVS at a specified test current (IT) VC Clamping Voltage -- Peak voltage measured across the TVS at a specified Ippm (peak impulse current) IR Reverse Leakage Current -- Current measured at VRVc VBR VR IR IT Ipp V VcVBRVR Ipp IR IT Bi-directional I Caution: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the component. This is a stress only rating and operation of the component at these or any other conditions above those indicated in the operational sections of this specification is not implied.

TVS Diode Arrays Datasheet © 2022 Littelfuse, Inc. Specifications are subject to change without notice. Revised: GD. 01/03/22 SP1103C 80A Discrete Bidirectional TVS Diode 8/20μs Pulse Waveform 10% 20% 30% 40% 50% 60% 70% 80% 90% 100% 110% Time (/uni03BCs) Percent of IPP Clamping Voltage vs IPP Clamp Voltage (VC) 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 20 25 30 35 40 45 50 55 60 65 70 75 80 Peak Pulse Current - IPP(A) Non-Repetitive Peak Pulse Power vs. Pulse Time Pulse Duration - tp (µs) Peak Pulse Power - Ppk (kW) 0.01 0.1 0.11 10 100 1000 Power Derating Curve 100 110 02 55 07 51 00 1251 50 Ambient Temperature - TA(ºC) % of Rated Power IPP Positive T ransmission Line Pulsing (TLP) Plot 0 2 4 6 8 TLP Voltage (V) TLP Current (A) Negative T ransmission Line Pulsing (TLP) Plot -25 -20 -15 -10 -8 -6 -4 -2 0 TLP Voltage (V) TLP Current (A)

TVS Diode Arrays Datasheet © 2022 Littelfuse, Inc. Specifications are subject to change without notice. Revised: GD. 01/03/22 SP1103C 80A Discrete Bidirectional TVS Diode Part Numbering SystemPart Marking System 1103C 01 T G Series Number of Channels Package T= Tape & Reel G= Green U: 1.6x1.0mm DFN USP TVS Diode Arrays (SPA Diodes) AFK x Date Code Assembly SitePart Code PIN1

Ordering Information

Part Number Package Marking Min. Order Qty. SP1103C-01UTG 1 .6x1 .0mm DFN AFKx 3000 Time Temperature TP TL TS(max) TS(min) tP tL tS time to peak temperature PreheatPreheat Ramp-upRamp-up Ramp-downRamp-dow Critical Zone TL to TP Critical Zone TL to TP Reflow Condition Pb – Free assembly Pre Heat - T emperature Min (Ts(min)) 150°C - T emperature Max (Ts(max)) 200°C - Time (min to max) (ts) 60 – 120 secs Average ramp up rate (Liquidus) T emp (TL) to peak 3°C/second max TS(max) to TL - Ramp-up Rate 3°C/second max Reflow - T emperature (TL) (Liquidus) 217°C - T emperature (tL) 60 – 150 seconds Peak T emperature (TP) 260+0/-5 °C Time within 5°C of actual peak T emperature (tp) 30 seconds Ramp-down Rate 6°C/second max Time 25°C to peak T emperature (TP) 8 minutes Max. Do not exceed 260°C Soldering Parameters IEC 61000−4−2 +8 kV Contact ESD Clamping Voltage IEC 61000−4−2 -8 kV Contact ESD Clamping Voltage

TVS Diode Arrays Datasheet © 2022 Littelfuse, Inc. Specifications are subject to change without notice. Revised: GD. 01/03/22 SP1103C 80A Discrete Bidirectional TVS Diode Embossed Carrier T ape & Reel Specification W AO P1 0.50 ±0.05 Do 1.50 0.10 0.00 2.00 0.05(I) PO 4.00 0.1(II) F(III) 1.75 0.1 Y Y X X BO KO T 0.20 0.02 SECTION Y-Y REF 3° SECTION X-X User Feeding Direction Pin 1 Location Symbol Millimeters A0 1 .14 +/- 0.03 B0 1 .75 +/- 0.03 K0 0.67 +/- 0.05 F 3.50 +/- 0.05 P1 2.00 +/- 0.10 W 8.00 +/- 0.10 Package Dimensions D E L e b h h A Top View Bottom View Side View 1 2 1 2 Pin1 Recommended Soldering pad layout (mm) 1.00 0.58 1.70 0.58 Symbol 1.6x1.0mm DFN Millimeters Min Nor Max A 0.45 0.50 0.55 A1 - 0.02 0.05 D 1 .55 1 .60 1 .65 E 0.95 1 .00 1 .05 b 0.75 0.80 0.85 L 0.35 0.40 0.45 e 1 .10 BSC h 0.15 0.20 0.25 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at: www.littelfuse.com/disclaimer-electronics.