SP1005 LITTELFUSE | Alldatasheet

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Features

t&4% *&$ ±30kV contact, ±30kV air t&'5 *&$ (5/50ns) t-JHIUOJOH *&$ 10A (tP=8/20μs) t-PXDBQBDJUBODFPGQ' (@ VR=0V) t-PXMFBLBHFDVSSFOUPG 0.1μA at 5V t*OEVTUSJFTTNBMMFTU&4% footprint available (0201) t.PCJMFQIPOFT t4NBSUQIPOFT t$BNDPSEFST t1%" t%JHJUBMDBNFSBT t.11.1 t1PSUBCMFOBWJHBUJPO devices t1PSUBCMFNFEJDBM t1PJOUPGTBMFUFSNJOBMT Pinout Functional Block Diagram 1 2 HF Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. Note: Drawing not to scale.

Revised: May 17, 2010 ©2010 Littelfuse, Inc. Specifications are subject to change without notice. Please refer to http://www.littelfuse.com for current information. SPA™ Silicon Protection Array Products 30pF Bi-Directional 0201 TVS Diode for ESD Protection SP1005 Lead-Free/Green Series CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Absolute Maximum Ratings Symbol Parameter Value Units IPP Peak Current (tp=8/20μs) 10.0 A TOP Operating Temperature -40 to 85 °C TSTOR Storage Temperature -65 to 150 °C Electrical Characteristics (TOP=25ºC) Parameter Symbol Test Conditions Min Typ Max Units Reverse Standoff Voltage V 38. 6.0 V Voltage Drop V D IR=1mA 8.5 9.5 V Leakage Current I LEAK VR=5V with 1 pin at GND 0.1 0.5 μA Clamp Voltage1 VC IPP=1A, tp 'XE 9.3 V IPP=2A, tp 'XE 10.0 V IPP=10A, tP çT 'XE 15.6 V Dynamic Resistance R DYN (VC2 - VC1) / (IPP2 - IPP1) 0.7 Ω ESD Withstand Voltage1 VESD IEC61000-4-2 (Contact Discharge) ±30 kV IEC61000-4-2 (Air Discharge) ±30 kV Diode Capacitance1 CD Reverse Bias=0V 30 Q' Reverse Bias=2.5V 23 Q' NOTES: 1Parameter is guaranteed by design and/or device characterization. Thermal Information Parameter Rating Units Storage Temperature Range -65 to 150 °C .BYJNVN+VODUJPO5FNQFSBUVSF 150 °C .BYJNVN-FBE5FNQFSBUVSF 4PMEFSJOHT 260 °C

41©2010 Littelfuse, Inc. Revised: May 17, 2010 SPA™ Silicon Protection Array Products Specifications are subject to change without notice. Please refer to http://www.littelfuse.com for current information. 30pF Bi-Directional 0201 TVS Diode for ESD Protection SP1005 Lead-Free/Green Series Lead-Free/Green SP1005 Pulse WaveformCapacitance vs. Reverse Bias Clamping Voltage vs. IPP 0.0 5.0 10.0 15.0 20.0 25.0 30.0 35.0 40.0 Bias Voltage (V) Capacitance (pF) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 Peak Pulse Current-IPP (A) Clamp Voltage (VC) 10% 20% 30% 40% 50% 60% 70% 80% 90% 100% 110% Insertion Loss (S21) I/O to GND -35 -30 -25 -20 -15 -10 1 10 100 1000 10000 Frequency (MHz) Attenuation (dB)

Revised: May 17, 2010 ©2010 Littelfuse, Inc. Specifications are subject to change without notice. Please refer to http://www.littelfuse.com for current information. SPA™ Silicon Protection Array Products 30pF Bi-Directional 0201 TVS Diode for ESD Protection SP1005 Lead-Free/Green Series Application Example Reflow Condition 1Co'SFFBTTFNCMZ Pre Heat - Temperature Min (Ts(min)) 150°C - Temperature Max (Ts(max)) 200°C - Time (min to max) (ts) 60 – 180 secs Average ramp up rate (Liquidus) Temp (TL) to peak 3°C/second max TS(max) to TL - Ramp-up Rate 3°C/second max Reflow - Temperature (TL) (Liquidus) 217°C - Temperature (tL) 60 – 150 seconds Peak Temperature (TP) 250+0/-5 °C Time within 5°C of actual peak Temperature (tp) 20 – 40 seconds Ramp-down Rate 6°C/second max Time 25°C to peak Temperature (TP) NJOVUFT.BY Do not exceed 260°C Soldering Parameters I/O Controller Outside World GND Keypads ICP3 SP1005 (x4)

43©2010 Littelfuse, Inc. Revised: May 17, 2010 SPA™ Silicon Protection Array Products Specifications are subject to change without notice. Please refer to http://www.littelfuse.com for current information. 30pF Bi-Directional 0201 TVS Diode for ESD Protection SP1005 Lead-Free/Green Series Lead-Free/Green SP1005 Package Dimensions - 0201 Flipchip Symbol

0201 Flipchip

A B D E D F C G

Ordering Information

Part Number Package Marking Min. Order Qty. SP1005-01WTG 'MJQDIJQ t 10000 Product Characteristics Lead Plating Sn Lead Material Copper Lead Coplanarity 6 um (max) Subsitute Material Silicon Body Material Silicon Notes : 1 . All dimensions are in millimeters 2. Dimensions include solder plating. 3. Dimensions are exclusive of mold flash & metal burr. "MMTQFDJmDBUJPOTDPNQMZUP+&%&$41&$.0*TTVF" 5. Blo is facing up for mold and facing down for trim/form, i.e. reverse trim/form. 6. Package surface matte finish VDI 11-13. Part Numbering System Part Marking System SP 1005 01 W T G Silicon Protection Array Series Number of Channels Package W: 0201 Flipchip T= Tape & Reel G= Green

Revised: May 17, 2010 ©2010 Littelfuse, Inc. Specifications are subject to change without notice. Please refer to http://www.littelfuse.com for current information. SPA™ Silicon Protection Array Products 30pF Bi-Directional 0201 TVS Diode for ESD Protection SP1005 Lead-Free/Green Series Embossed Carrier T ape & Reel Specification – 0201 Flipchip 0.28 0.30 0.75 0.19 Recommended Solder Pad Footprint A0 K0 B0 T P0P1 P2 D E FW *Sizes in mm Symbol Millimeters A0 0.41+/-0.03 B0 0.70+/-0.03 D ø 1 .50 + 0.10 D1 ø 0.20 +/- 0.05 E 1 .75+/-0.10 F 3.50+/-0.05 K0 0.38+/-0.03 P0 2.00+/-0.05 P1 2.00+/-0.05 P2 4.00+/-0.10 T 0.23+/-0.02