ISP752T INFINEON | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 16

Technical content

Features

  • Overload protection
  • Current limitation
  • Short circuit protection
  • Thermal shutdown with restart
  • ESD - Protection
  • Overvoltage protection (including load dump)
  • Fast demagnetization of inductive loads
  • Reverse battery protection with external resistor
  • CMOS compatible input
  • Loss of GND and loss of Vbb protection
  • Very low standby current PG-DSO-8 Application
  • All types of resistive, inductive and capacitive loads
  • µC compatible power switch for 12 V, 24 V and 42 V DC industrial applications
  • Replaces electromechanical relays and discrete circuits General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions.

+ Vbb IN Signal GND ESD miniPROFET  OUT GND Logic Voltage source Charge pump Level shifter Temperature sensorRectifier Limit for unclamped ind. loads Gate protection Current limit Load GND Load V Logic Overvoltage protection Pin Symbol Function

1 GND Logic ground

2 IN Input, activates the power switch in case of logic high signal

3 OUT Output to the load

4 NC not connected

5 Vbb Positive power supply voltage

6 Vbb Positive power supply voltage

7 Vbb Positive power supply voltage

8 Vbb Positive power supply voltage

GND 1• 8 Vbb IN 2 7 Vbb OUT 3 6 Vbb NC 4 5 Vbb Top view

Maximum Ratings at Tj = 25 °C, unless otherwise specified Parameter Symbol Value Unit Supply voltage Vbb 52 V Supply voltage for full short circuit protection Vbb(SC) 50 Continuous input voltage VIN -10 ... +16 Load current (Short - circuit current, see page 5) IL self limited A Current through input pin (DC) IIN ± 5 mA Junction temperature Tj 150 °C Operating temperature Ta -30...+85 Storage temperature Tstg -40 ... +105 Power dissipation 1) Ptot 1.5 W Inductive load switch-off energy dissipation1)2) single pulse, (see page 8) Tj =150 °C, IL = 1 A EAS 125 mJ Load dump protection2) VLoadDump3)= VA + VS RI=2Ω , td=400ms, VIN= low or high, VA=13,5V RL = 13.5 Ω RL = 27 Ω VLoaddump 73.5 83.5 V Electrostatic discharge voltage (Human Body Model) according to ANSI EOS/ESD - S5.1 - 1993 ESD STM5.1 - 1998 Input pin all other pins VESD ± 1 ± 5 kV Thermal Characteristics Thermal resistance @ min. footprint Rth(JA) - 95 - K/W Thermal resistance @ 6 cm2 cooling area 1) Rth(JA) - 70 83 1Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain connection. PCB is vertical without blown air. (see page 16) 2not subject to production test, specified by design 3VLoaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 . Supply voltages higher than Vbb(AZ) require an external current limit for the GND pin, e.g. with a 150Ω resistor in GND connection. A resistor for the protection of the input is integrated.

Electrical Characteristics

Parameter and Conditions Symbol Values Unit Load Switching Capabilities and Characteristics On-state resistance Tj = 25 °C, IL = 1 A, Vbb = 9...52 V Tj = 150 °C RON 150 270 200 380 mΩ Nominal load current; Device on PCB 1) TC = 85 °C, Tj ≤ 150 °C IL(nom) 1.3 1.7 - A Turn-on time to 90% VOUT RL = 47 Ω ton - 80 180 µs Turn-off time to 10% VOUT RL = 47 Ω toff - 80 200 Slew rate on 10 to 30% VOUT, RL = 47 Ω , Vbb = 13.5 V dV/dton - 0.7 2 V/µs Slew rate off 70 to 40% VOUT, RL = 47 Ω , Vbb = 13.5 V -dV/dtoff - 0.9 2 Operating Parameters Operating voltage Vbb(on) 6 - 52 V Undervoltage shutdown of charge pump Tj = -40...+85 °C Tj = 150 °C Vbb(under) 5.5 Undervoltage restart of charge pump Vbb(u cp) - 4 5.5 Standby current Tj = -40...+85 °C, VIN = low Tj = +150 °C2) , VIN = low Ibb(off) µA Leakage output current (included in Ibb(off)) VIN = low IL(off) - - 5 Operating current V IN = high IGND - 0.8 2 mA 1Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain connection. PCB is vertical without blown air. (see page 16) 2higher current due temperature sensor

Parameter and Conditions Symbol Values Unit Protection Functions1) Initial peak short circuit current limit (pin 5 to 3) Tj = -40 °C, Vbb = 20 V, tm = 150 µs Tj = 25 °C Tj = 150 °C Tj = -40...+150 °C, Vbb > 40 V , ( see page 11 ) IL(SCp) 6.5 52) A Repetitive short circuit current limit T j = Tjt (see timing diagrams) Vbb < 40 V Vbb > 40 V IL(SCr) 4.5 Output clamp (inductive load switch off) at VOUT = Vbb - VON(CL), Ibb = 4 mA VON(CL) 59 63 - V Overvoltage protection 3) Ibb = 4 mA Vbb(AZ) 62 - - Thermal overload trip temperature Tjt 150 - - °C Thermal hysteresis ∆Tjt - 10 - K Reverse Battery Reverse battery4) -Vbb - - 52 V Drain-source diode voltage (VOUT > Vbb) Tj = 150 °C -VON - 600 - mV 1Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation . 2not subject to production test, specified by design 3 see also VON(CL) in circuit diagram on page 7 4Requires a 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source diode has to be limited by the connected load. Power dissipation is higher compared to normal operating conditions due to the voltage drop across the drain-source diode. The temperature protection is not active during reverse current operation! Input current has to be limited (see max. ratings page 3).

Parameter and Conditions Symbol Values Unit Input Input turn-on threshold voltage VIN(T+) - - 2.2 V Input turn-off threshold voltage VIN(T-) 0.8 - - Input threshold hysteresis ∆VIN(T) - 0.4 - Off state input current VIN = 0.7 V IIN(off) 1 - 25 µA On state input current V IN = 5 V IIN(on) 3 - 25 Input resistance (see page 7) RI 2 3.5 5 kΩ

Terms Inductive and overvoltage output clamp PROFET V IN OUT GND bb VIN IIN Vbb Ibb IL VOUTIGND VON RGND + Vbb OUT GND VZ VON VON clamped to 59V min. Overvoltage protection of logic partInput circuit (ESD protection) + Vbb IN GND GNDR Signal GND Logic V Z2 IR V Z1 IN GND IR ZD IIIESD- The use of ESD zener diodes as voltage clamp at DC conditions is not recommended VZ1=6.1V typ., VZ2=Vbb(AZ)=62V min., RI=3.5 kΩ typ., RGND=150Ω Reverse battery protection Internal output pull down GND Logic IN OUT LR Power GND GNDR Signal GND Power Inverse IR Vbb- Diode V OUT Signal GND R O V bb RGND=150Ω , RI=3.5kΩ typ., Temperature protection is not active during inverse current RO = 200 kΩ typ.

Vbb disconnect with charged inductive load PROFET V IN OUT GND bb Vbb high GND disconnect PROFET V IN OUT GND bb Vbb VIN VGND Inductive Load switch-off energy dissipation PROFET V IN OUT GND bb E E E EAS bb L R ELoad RL L {LZ GND disconnect with GND pull up PROFET V IN OUT GND bb Vbb VGND VIN Energy stored in load inductance: EL = ½ * L * IL2 While demagnetizing load inductance, the enérgy dissipated in PROFET is EAS = Ebb + EL - ER = VON(CL) * iL(t) dt, with an approximate solution for RL > 0Ω : E IL R VV IR V AS L L bb OUT CL LL OUT CL =+ + * || )() | ()2 1

Typ. transient thermal impedance ZthJA=f(tp) @ 6cm2 heatsink area Parameter: D=tp/T 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 4 s tp -2 10 -1 10 0 10 1 10 2 10 K/WZthJA D=0 D=0.01 D=0.02 D=0.05 D=0.1 D=0.2 D=0.5 Typ. transient thermal impedance ZthJC=f(tp) @ min. footprint Parameter: D=tp/T 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 4 s tp -2 10 -1 10 0 10 1 10 2 10 K/WZthJA D=0 D=0.01 D=0.02 D=0.05 D=0.1 D=0.2 D=0.5 Typ. on-state resistance RON = f(Tj) ; Vbb = 13,5V ; Vin = high -40 -20 0 20 40 60 80 100 120 °C 160 Tj 100 150 200 mΩ 300 RON Typ. on-state resistance RON = f(Vbb); IL = 1 A ; Vin = high 0 5 10 15 20 25 30 35 40 V 50 Vbb 100 150 200 250 300 mΩ 400 RON -40°C 25°C 150°C

Typ. turn off time toff = f(Tj); RL = 47Ω -40 -20 0 20 40 60 80 100 120 °C 160 Tj 100 120 µs 160 toff 9...42V Typ. turn on time ton = f(Tj); RL = 47Ω -40 -20 0 20 40 60 80 100 120 °C 160 Tj 100 120 µs 160 ton 13.5V 42V Typ. slew rate on dV/dton = f(Tj) ; RL = 47 Ω -40 -20 0 20 40 60 80 100 120 °C 160 Tj 0.2 0.4 0.6 0.8 1.2 1.4 1.6 V/µs dV dton 13.5V 42V Typ. slew rate off dV/dtoff = f(Tj); RL = 47 Ω -40 -20 0 20 40 60 80 100 120 °C 160 Tj 0.5 1.5 2.5 V/µs 3.5 -dV dtoff 13.5V 42V

Typ. leakage current IL(off) = f(Tj) ; Vbb = 42V ; VIN = low -40 -20 0 20 40 60 80 100 120 °C 160 Tj 0.5 1.5 µA 2.5 IL(off) Typ. standby current Ibb(off) = f(Tj) ; Vbb = 42V ; VIN = low -40 -20 0 20 40 60 80 100 120 °C 160 Tj µA Ibb(off) Typ. initial short circuit shutdown time toff(SC) = f(Tj,start) ; Vbb = 20V -40 -20 0 20 40 60 80 100 120 °C 160 Tj 0.5 1.5 2.5 ms toff(SC) Typ. initial peak short circuit current limit IL(SCp) = f(Vbb) 0 10 20 30 40 V 60 Vbb A IL(SCp) -40°C 25°C 150°C

Typ. input current IIN(on/off) = f(Tj); Vbb = 13,5V; VIN = low/high VINlow ≤ 0,7V; VINhigh = 5V -40 -20 0 20 40 60 80 100 120 °C 160 Tj µA IIN on off Typ. input current IIN = f(VIN); Vbb = 13.5V 0 1 2 3 4 5 6 V 8 VIN µA IIN -40...25°C 150°C Typ. input threshold voltage VIN(th) = f(Tj) ; Vbb = 13,5V -40 -20 0 20 40 60 80 100 120 °C 160 Tj 0.2 0.4 0.6 0.8 1.2 1.4 1.6 V VIN(th) on off Typ. input threshold voltage VIN(th) = f(Vbb) ; Tj = 25°C 0 10 20 30 V 50 Vbb 0.2 0.4 0.6 0.8 1.2 1.4 1.6 V VIN(th) on off

Maximum allowable load inductance for a single switch off L = f(IL); Tjstart=150°C, RL=0Ω 0 0.25 0.5 0.75 1 A 1.5 IL 200 400 600 800 1000 1200 1400 1600 mH 2000 L 42V 13,5V Maximum allowable inductive switch-off energy, single pulse EAS = f(IL); Tjstart = 150°C, Vbb = 13,5V 0 0.25 0.5 0.75 1 A 1.5 IL 200 400 600 800 1000 1200 1400 mJ 1800 EAS

Package: Ordering code: PG-DSO-8 SP000211730 Printed circuit board (FR4, 1.5mm thick, one layer 70µm, 6cm2 active heatsink area ) as a reference for max. power dissipation Ptot nominal load current IL(nom) and thermal resistance Rthja Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81669 München © Infineon Technologies AG 2001 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.