IPA60R125CP INFINEON | Alldatasheet

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Technical content

Features

  • Worldwide best RDS,on in TO220 Fullpak
  • Ultra low gate charge
  • Extreme dv/dt rated
  • High peak current capability
  • Qualified according to JEDEC1) for target applications
  • Pb-free lead plating; RoHS compliant CoolMOS CP is specially designed for:
  • Hard switching SMPS topologies Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Unit Continuous drain current2) I D T C=25 °C A T C=100 °C Pulsed drain current3) I D,pulse T C=25 °C Avalanche energy, single pulse E AS I D=11 A, V DD=50 V 708 mJ Avalanche energy, repetitive t AR 3),4) E AR I D=11 A, V DD=50 V Avalanche current, repetitive t AR 3),4) I AR A MOSFET dv /dt ruggedness d v /dt V DS=0...480 V V/ns Gate source voltage V GS static V AC (f >1 Hz) Power dissipation P tot T C=25 °C W Operating and storage temperature T j, T stg °C Mounting torque M2.5 screws 50 Ncm ±30 -55 ... 150 1.1 ±20 Value V DS @ Tj,max 650 V R DS(on),max 0.125 Ω Q g,typ 53 nC Product Summary Type Package Ordering Code Marking IPA60R125CP PG-TO220-3-31 SP000095275 6R125P PG-TO220-3-31 Rev. 1.3 page 1 2005-12-22

Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Unit Continuous diode forward current2) I S A Diode pulse current3) I S,pulse 82 Reverse diode dv /dt 5) dv /dt 15 V/ns Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, junction - case R thJC - - 3.6 K/W R thJA leaded - - 80 Soldering temperature, wavesoldering only allowed at leads T sold 1.6 mm (0.063 in.) from case for 10 s - - 260 °C Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=250 µA 600 - - V Gate threshold voltage V GS(th) V DS=V GS, I D=1.1 mA 2.5 3 3.5 Zero gate voltage drain current I DSS V DS=600 V, V GS=0 V, T j=25 °C --2 µ A V DS=600 V, V GS=0 V, T j=150 °C -2 0- Gate-source leakage current I GSS V GS=20 V, V DS=0 V - - 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=16 A, T j=25 °C - 0.11 0.125 Ω V GS=10 V, I D=16 A, Gate resistance R G f =1 MHz, open drain - 2.1 - Ω Value T C=25 °C Values Thermal resistance, junction - ambient Rev. 1.3 page 2 2005-12-22

Parameter Symbol Conditions Unit min. typ. max. Dynamic characteristics Input capacitance C iss - 2500 - pF Output capacitance C oss - 120 - Effective output capacitance, energy related6) C o(er) - 110 - Effective output capacitance, time related7) C o(tr) - 300 - Turn-on delay time t d(on) -1 5- n s Rise time t r -5- Turn-off delay time t d(off) -5 0- Fall time t f -5- Gate Charge Characteristics Gate to source charge Q gs -1 2- n C Gate to drain charge Q gd -1 8- Gate charge total Q g -5 3 7 0 Gate plateau voltage V plateau - 5.0 - V Reverse Diode Diode forward voltage V SD V GS=0 V, I F=16 A, T j=25 °C - 0.9 1.2 V Reverse recovery time t rr - 430 - ns Reverse recovery charge Q rr -9- µ C Peak reverse recovery current I rrm -4 2- A 1) J-STD20 and JESD22 2) Limited only by maximum temperature 3) Pulse width t p limited by T j,max 4) Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f. 5) ISD<=ID, di/dt<=200A/µs, VDClink=400V, Vpeak<V(BR)DSS, Tj<Tjmax, identical low-side and high side switch. 6) Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS. 7) Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. V R=400 V, I F=I S, di F/dt =100 A/µs Values V GS=0 V, V DS=100 V, f =1 MHz V DD=400 V, V GS=10 V, I D=16 A, R G=3.3 Ω V DD=400 V, I D=16 A, V GS=0 to 10 V V GS=0 V, V DS=0 V to 480 V Rev. 1.3 page 3 2005-12-22

1 Power dissipation 2 Safe operating area

P tot=f(T C) I D=f(V DS); T C=25 °C; D =0 parameter: t p 3 Max. transient thermal impedance 4 Typ. output characteristics I D=f(V DS); T j=25 °C I D=f(V DS); T j=25 °C parameter: D=t p/T parameter: V GS 0 40 80 120 160 T C [°C] P tot [W] 1 µs 10 µs 100 µs 1 ms 10 ms DC 103102101100 102 101 100 10-1 V DS [V] I D [A] single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10110010-110-210-310-410-5 101 100 10-1 10-2 t p [s] Z thJC [K/W] 4.5 V 5 V 5.5 V 6 V 7 V 8 V 10 V 20 V 105 120 0 5 10 15 20 V DS [V] I D [A] limited by on-state resistance Rev. 1.3 page 4 2005-12-22

5 Typ. output characteristics 6 Typ. drain-source on-state resistance I D=f(V DS); T j=150 °C R DS(on)=f(I D); T j=150 °C parameter: V GS parameter: V GS 7 Drain-source on-state resistance 8 Typ. transfer characteristics R DS(on)=f(T j); I D=16 A; V GS=10 V I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j typ 98 % 0.05 0.1 0.15 0.2 0.25 0.3 -60 -20 20 60 100 140 180 T j [°C] R DS(on) [Ω] C °25 C °150 120 02468 1 0 V GS [V] I D [A] 4.5 V 5 V 5.5 V 6 V 7 V 8 V 10 V 20 V 0 5 10 15 20 V DS [V] I D [A] 5 V 5.5 V 6 V 6.5 V 7 V 20 V 0.1 0.2 0.3 0.4 0.5 0 1 02 03 04 05 0 I D [A] R DS(on) [Ω] Rev. 1.3 page 5 2005-12-22

9 Typ. gate charge 10 Forward characteristics of reverse diode V GS=f(Q gate); I D=16 A pulsed I F=f(V SD) parameter: V DD parameter: T j

11 Avalanche energy 12 Drain-source breakdown voltage

E AS=f(T j); I D=11 A; V DD=50 V V BR(DSS)=f(T j); I D=0.25 mA 25 °C 150 °C 25 °C, 98% 150 °C, 98% 102 101 100 10-1 0 0.5 1 1.5 2 V SD [V] I F [A] 120 V 400 V 0 1 02 03 04 05 06 0 Q gate [nC] V GS [V] 540 580 620 660 700 -60 -20 20 60 100 140 180 T j [°C] V BR(DSS) [V] 250 500 750 20 60 100 140 180 T j [°C] E AS [mJ] Rev. 1.3 page 6 2005-12-22

13 Typ. capacitances 14 Typ. Coss stored energy C =f(V DS); V GS=0 V; f =1 MHz E oss= f(V DS) 0 100 200 300 400 500 600 V DS [V] E oss [µJ] Ciss Coss Crss 105 104 103 102 101 100 0 50 100 150 200 V DS [V] C [pF] Rev. 1.3 page 7 2005-12-22

Definition of diode switching characteristics Rev. 1.3 page 8 2005-12-22

PG-TO220-3-31: Outline/ Fully isolated package (2500VAC; 1 minute) Dimensions in mm/inches Rev. 1.3 page 9 2005-12-22

St.-Martin-Straße 53 D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices, please contact your nearest Infineon Technologies office in Germany or our Infineon Technologies representatives worldwide (see address list). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact your nearest Infineon Technologies office. Infineon Technologies' components may only be used in life-support devices or systems with the expressed written approval of Infineon Technologies if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.3 page 10 2005-12-22