KMY10 INFINEON | Alldatasheet
Document overview
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Technical content
Features
- High sensitivity
- Low power consumption
- High reliability
- Small size
- Light weight
- Low cost is made and secured during production and to ensure the correct operation of the device itmust not be tampered with! 2. Only the pads marked 1; 2; 3, are predetermined solder pads and only these pads should be used to connect the device. Soldering or otherwise interfering with any other parts of the AF-circuit board will immediately invalidate any warranty on the device! 3. The KMY 10 is classified as an Electrostatic Discharge Sensitive Device. Handling precautions for such devices must be adhered to! 4. Regulations on the use of High frequency devices. The use of high frequency devices is regulated in most countries and certain frequencies can be subject to restrictions. The use of the KMY 10 should be clarified with the respective authorities in each country to ensure compliance with the prevalent legislation.
Parameter Symbol Value Unit Supply voltage VIN 15 V Output current IOUT 5m A Operating temperature rangeTA – 20 … + 60 °C Storage temperature rangeTstg – 50 … + 125 °C
Electrical Characteristics
atTA = 25°C and VIN = 12 V, unless otherwise specified. Parameter Symbol Limit Values Unit min. typ. max. Supply voltage VIN 81 2 1 5 V Operating current IIN –2 5 –m A Power atf0 EIRP 1 – 0 + 2 dBm Frequency f0 9.33 9.35 9.37 GHz Output voltage signal Vout,0-peak –5 0 1) 1) Person at 5 m distance –m V DC output voltage (offset)V0 – 2.5 – V Output noise voltage2) 2) With no object detected V N,0-peak –1 0 2 0 m V Frequency drift vs. temperature 3) 3) Defined over – 20°C … + 60°C dfT – ± 6 – MHz Frequency drift vs. operating voltage dfV – ± 0.1 – MHz Preamp voltage gain G – 920 – Preamp bandwidth B – 2 - 750 – Hz Time between power on until first detection tp –4–s
Note: The influence of fluorescent light interference (100 Hz carrier) has to be reduced by the installation of an additional 100 Hz notch filter. EHA07094 6 - 1M Ω LM 3.3µF 150 pF Ωk33 LM 3 + CCV INPUT OUTPUT Pre-Amp A B + 9 V 100 nF + 5 V CCV 78L05 1 1 358 358 V CCV CC M Ω1 M Ω1M Ω1 M Ω1 3.3µF Ω33 k 150 pF 3.3µF EHA07092 Outp. GND + 12 V Microwave Sensor 3.3µF 1M Ω ΩM1 A LM 358 150 pF kΩ330 Ωk33 3.3µ F kΩ1 100 Ωk kΩ10 1 Ωk 10 Ωk BCR 133 1N4148 10 Ωk 20 Ωk Setting of Detection Threshold (e.g. = 6.5 V) Preamplifier (G V = 10) 100 kΩ 2M Ω Fµ4.7 10 nF DIS TRG THR CTR RES Q GND 1k Ω LED 555 V +8 358LM B VCC KMY = 0.5 sec. - 10 sec.)pf(Monoflop INV 10 2 + 12 V + 12 V + 12 V + 12 V + 12 V + 12 V
Package outlines for tubes, trays etc. are contained in our Data Book “Package Information”. Dimensions in mm M8 x 0.5 1.6 3.4 3.4 1.5 1.6 EHA07098 ±0.1 34±0.1 Ø3.8 ±0.1 SIEMENS 1.51.5 +%- Pre-Amp Input GND +V Pre-Amp Output approx. 25 approx. 17 Weight approx. 40 g Special Package