SMV2019 ALPHA | Alldatasheet

Document overview

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Technical content

Features

I High Q for Low Loss Resonators I Low Leakage Current I High Tuning Ratio for Wideband VCOs I SPICE Model Parameters I Small Footprint Chip Design

Description

Alpha Industries’ product line of silicon hyperabrupt junction varactor diode chips are processed using established ion-implantation technology resulting in low R S wide tuning ratio devices with high Q values. These planar chips have a small outline size (12 x 12 mils SMV2019 to SMV2023 Electrical Specifications at 25°C CJ @ 0 V C J @ 4 V C J @ 20 V Q @ 4 V 1 GHz I R @17.6 V Contact Part Number (pF) 1 (pF) (pF) 50 MHz 2 RS @ 4 V (ΩΩ) (nA) 3 Diam. (mils)4 nominal) and are fully passivated resulting in low leakage current and high reliability.These varactor chips are intended for assembly in hybrid integrated circuit resonators used in VCOs and analog tuned filters. 1. All capacitance values specified at 1 MHz. 2. 50 MHz Q calculated from 1 GHz RS and 1 MHz CJ. 3. VB at 10 µA specified at 22 V Min. 4. Outline drawing 149-801. Characteristic Value Reverse Voltage (VR) 22 V Forward Current (IF) 100 mA Power Dissipation at 25°C (PD) 250 mW Operating Temperature (TOP) -55°C to +150°C Storage Temperature (TST) -65°C to +200°C Absolute Maximum Ratings 0.010 (0.254 mm) MIN. 0.014 (0.356 mm) MAX. SQ. ANODE METALIZED GOLD DOT 0.002 (0.051 mm) DIA. MIN. CATHODE METALIZED BACK CONTACT - GOLD SILICON 0.004 (0.127 mm) MIN. 0.006 (0.152 mm) MAX. Outline Drawing 149-801

Silicon Hyperabrupt Varactor Diode Chips SMV2109 to SMV2023 2 Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email sales@alphaind.com • www.alphaind.com Specifications subject to change without notice. 8/01A DIODE Varactor_Diode AREA = 1 MODEL = Diode_Model MODE = nonlinear RES R S R = RS PORT P_anode port = 1 PORT P_Cathode port = 2 DIODEM Diode_Model I S = 1.00e-14 RS = RS N = 1, 2 T T = 0 CJO = CJO M = M V J = VJ EG = 1.11 XTI = 3 KF =0 AF =1 FC = 0.5 BV = 22 IBV = 1e-5 ISR = 0 NR = 2 IKF = 0 NBV = 1 IBVL = 0 NBVL = 1 TBV1 = 0 TNOM = 27 FFE = 1 Capacitance (pF) Reverse Voltage (V) Capacitance vs. Reverse Voltage 0 5 10 15 20 SMV2019-000 SMV2020-000 SMV2021-000 SMV2022-000 SMV2023-000 Series Resistance (Ω) Reverse Voltage (V) Series Resistance vs. Voltage @ 1 GHz 08 4 1 21 62 0 SMV2019-000 SMV2020-000 SMV2021-000 SMV2022-000 SMV2023-000 Typical Performance Data SPICE Model Part C JO VJ MR S Number (pF) (V) ( ΩΩ) SMV2019 2.3 3.5 1.40 4.8 SMV2020 3.3 3.6 1.30 4.1 SMV2021 4.5 3.9 1.34 2.8 SMV2022 7.1 4.0 1.40 2.2 SMV2023 10.8 4.6 1.45 1.4 Typical Capacitance Values SMV2019 SMV2020 SMV2021 SMV2022 SMV2023 VR (V) C J (pF) C J (pF) C J (pF) C J (pF) C J (pF) SPICE model parameters extracted from measured characteristics may not reflect exact physical or electronic properties. See application note APN1004. CV = + C P CJ0 MVR VJ