SMUN5314DW1T1G

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Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 34

Technical content

Features

• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• Available in 8 mm, 7 inch/3000 Unit Tape and Reel
• S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant* MAXIMUM RATINGS (TA = 25°C unless otherwise noted, common for Q1 and Q2, − minus sign for Q1 (PNP) omitted) Rating Symbol Value Unit Collector-Base Voltage VCBO 50 Vdc Collector-Emitter Voltage VCEO 50 Vdc Collector Current IC 100 mAdc Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. SOT−363 CASE 419B STYLE 1 MARKING DIAGRAM ORDERING AND DEVICE MARKING INFORMATION See detailed ordering, shipping, and specific marking information in the table on page 2 of this data sheet. R2R1 (1)(2)(3) (4) (5) (6) http://onsemi.com http://onsemi.com xx M /C0071 /C0071 (Note: Microdot may be in either location) *Date Code orientation and/or position may vary depending upon manufacturing location. xx = Device Code M = Date Code* /C0071 = Pb−Free Package

MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series http://onsemi.com THERMAL CHARACTERISTICS Characteristic (One Junction Heated) Symbol Max Unit Total Device Dissipation TA = 25°C Derate above 25°C PD 187 (Note 1) 256 (Note 2) 1.5 (Note 1) 2.0 (Note 2) mW mW/°C Thermal Resistance − Junction-to-Ambient R/C0113JA 670 (Note 1) 490 (Note 2) °C/W Characteristic (Both Junctions Heated) Symbol Max Unit Total Device Dissipation TA = 25°C Derate above 25°C PD 250 (Note 1) 385 (Note 2) 2.0 (Note 1) 3.0 (Note 2) mW mW/°C Thermal Resistance − Junction-to-Ambient R/C0113JA 493 (Note 1) 325 (Note 2) °C/W Thermal Resistance − Junction-to-Lead R/C0113JL 188 (Note 1) 208 (Note 2) °C/W Junction and Storage Temperature TJ, Tstg −55 to +150 °C 1. FR −4 @ Minimum Pad 2. FR −4 @ 1.0 x 1.0 inch Pad ORDERING, SHIPPING, DEVICE MARKING AND RESISTOR VALUES Device Package Marking R1 (K) R2 (K) Shipping† MUN5311DW1T1G, SMUN5311DW1T1G, SMUN5311DW1T2G SOT−363 (Pb−Free) 11 10 10 3,000 / Tape & Reel MUN5312DW1T1G, SMUN5312DW1T1G SOT−363 (Pb−Free) 12 22 22 3,000 / Tape & Reel MUN5313DW1T1G, SMUN5313DW1T1G SOT−363 (Pb−Free) 13 47 47 3,000 / Tape & Reel MUN5314DW1T1G, SMUN5314DW1T1G SOT−363 (Pb−Free) 14 10 47 3,000 / Tape & Reel MUN5315DW1T1G, SMUN5315DW1T1G SOT−363 (Pb−Free) 15 10 ∞ 3,000 / Tape & Reel MUN5316DW1T1G SOT−363 (Pb−Free) 16 4.7 ∞ 3,000 / Tape & Reel MUN5330DW1T1G, SMUN5330DW1T1G SOT−363 (Pb−Free) 30 1.0 1.0 3,000 / Tape & Reel MUN5331DW1T1G SOT−363 (Pb−Free) 31 2.2 2.2 3,000 / Tape & Reel MUN5332DW1T1G, NSVMUN5332DW1T1G SOT−363 (Pb−Free) 32 4.7 4.7 3,000 / Tape & Reel MUN5333DW1T1G, NSVMUN5333DW1T1G SOT−363 (Pb−Free) 33 4.7 47 3,000 / Tape & Reel MUN5334DW1T1G, NSVMUN5334DW1T1G SOT−363 (Pb−Free) 34 22 47 3,000 / Tape & Reel MUN5335DW1T1G, SMUN5335DW1T1G, SMUN5335DW1T2G SOT−363 (Pb−Free) 35 2.2 47 3,000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.

MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series http://onsemi.com

ELECTRICAL CHARACTERISTICS

(TA = 25°C unless otherwise noted, common for Q1 and Q2, − minus sign for Q1 (PNP) omitted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector-Base Cutoff Current (VCB = 50 V, IE = 0) ICBO − − 100 nAdc Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO − − 500 nAdc Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0) MUN5311DW1T1G, SMUN5311DW1T1G MUN5312DW1T1G, SMUN5312DW1T1G MUN5313DW1T1G, SMUN5313DW1T1G MUN5314DW1T1G, SMUN5314DW1T1G MUN5315DW1T1G, SMUN5315DW1T1G MUN5316DW1T1G MUN5330DW1T1G, SMUN5330DW1T1G MUN5331DW1T1 G MUN5332DW1T1G, NSVMUN5332DW1T1G MUN5333DW1T1G, NSVMUN5333DW1T1G MUN5334DW1T1G, NSVMUN5334DW1T1G MUN5335DW1T1G, SMUN5335DW1T1G IEBO 0.5 0.2 0.1 0.2 0.9 1.9 4.3 2.3 1.5 0.18 0.13 0.2 mAdc Collector-Base Breakdown Voltage (IC = 10 /C0109A, IE = 0) V(BR)CBO 50 − − Vdc Collector-Emitter Breakdown Voltage (Note 3) (IC = 2.0 mA, IB = 0) V(BR)CEO 50 − − Vdc ON CHARACTERISTICS (Note 3) DC Current Gain (VCE = 10 V, IC = 5.0 mA) MUN5311DW1T1G, SMUN5311DW1T1G MUN5312DW1T1G, SMUN5312DW1T1G MUN5313DW1T1G, SMUN5313DW1T1G MUN5314DW1T1G, SMUN5314DW1T1G MUN5315DW1T1G, SMUN5315DW1T1G MUN5316DW1T1G MUN5330DW1T1G, SMUN5330DW1T1G MUN5331DW1T1G MUN5332DW1T1G, NSVMUN5332DW1T1G MUN5333DW1T1G, NSVMUN5333DW1T1G MUN5334DW1T1G, NSVMUN5334DW1T1G MUN5335DW1T1G, SMUN5335DW1T1G hFE 160 160 3.0 8.0 100 140 140 350 350 5.0 200 150 140 Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) MUN5311DW1T1G, SMUN5311DW1T1G MUN5312DW1T1G, SMUN5312DW1T1G MUN5313DW1T1G, SMUN5313DW1T1G MUN5314DW1T1G, SMUN5314DW1T1G MUN5335DW1T1G, SMUN5335DW1T1G C = 10 mA, IB = 5 mA) MUN5330DW1T1G, SMUN5330DW1T1G MUN5331DW1T1G (IC = 10 mA, IB = 1 mA) MUN5315DW1T1G, SMUN5315DW1T1G MUN5316DW1T1G MUN5332DW1T1G, NSVMUN5332DW1T1G MUN5333DW1T1G, NSVMUN5333DW1T1G MUN5334DW1T1G, NSVMUN5334DW1T1G VCE(sat) 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 Vdc

MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series http://onsemi.com Characteristic UnitMaxTypMinSymbol ON CHARACTERISTICS (Note 3) Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k/C0087) MUN5311DW1T1G, SMUN5311DW1T1G MUN5312DW1T1G, SMUN5312DW1T1G MUN5314DW1T1G, SMUN5314DW1T1G MUN5315DW1T1G, SMUN5315DW1T1G MUN5316DW1T1G MUN5330DW1T1G, SMUN5330DW1T1G MUN5331DW1T1G MUN5332DW1T1G, NSVMUN5332DW1T1G MUN5333DW1T1G, NSVMUN5333DW1T1G MUN5334DW1T1G, NSVMUN5334DW1T1G MUN5335DW1T1G, SMUN5335DW1T1G CC = 5.0 V, VB = 3.5 V, RL = 1.0 k/C0087) MUN5313DW1T1G, SMUN5313DW1T1G VOL 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 Vdc Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 k/C0087) MUN5311DW1T1G, SMUN5311DW1T1G MUN5312DW1T1G, SMUN5312DW1T1G MUN5313DW1T1G, SMUN5313DW1T1G MUN5314DW1T1G, SMUN5314DW1T1G MUN5333DW1T1G, NSVMUN5333DW1T1G MUN5334DW1T1G, NSVMUN5334DW1T1G MUN5335DW1T1G, SMUN5335DW1T1G CC = 5.0 V, VB = 0.050 V, RL = 1.0 k/C0087) MUN5330DW1T1G, SMUN5330DW1T1G (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 k/C0087) MUN5315DW1T1G, SMUN5315DW1T1G MUN5316DW1T1G MUN5331DW1T1G MUN5332DW1T1G, NSVMUN5332DW1T1G VOH 4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 Vdc Input Resistor MUN5311DW1T1G, SMUN5311DW1T1G MUN5312DW1T1G, SMUN5312DW1T1G MUN5313DW1T1G, SMUN5313DW1T1G MUN5314DW1T1G, SMUN5314DW1T1G MUN5315DW1T1G, SMUN5315DW1T1G MUN5316DW1T1G MUN5330DW1T1G, SMUN5330DW1T1G MUN5331DW1T1G MUN5332DW1T1G, NSVMUN5332DW1T1G MUN5333DW1T1G, NSVMUN5333DW1T1G MUN5334DW1T1G, NSVMUN5334DW1T1G MUN5335DW1T1G, SMUN5335DW1T1G 7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 15.4 1.54 4.7 1.0 2.2 4.7 4.7 2.2 28.6 61.1 6.1 1.3 2.9 6.1 6.1 28.6 2.86 k /C0087 Resistor Ratio MUN5311DW1T1G/SMUN5311DW1T1G/MUN5312DW1T1G/ SMUN5312DW1T1G/MUN5313DW1T1G/SMUN5313DW1T1G MUN5314DW1T1G/SMUN5314DW1T1G MUN5315DW1T1G/SMUN5315DW1T1G/MUN5316DW1T1G MUN5330DW1T1G/SMUN5330DW1T1G/MUN5331DW1T1G/ MUN5332DW1T1G/NSVMUN5332DW1T1G MUN5333DW1T1G/NSVMUN5333DW1T1G MUN5334DW1T1G/NSVMUN5334DW1T1G MUN5335DW1T1G/SMUN5335DW1T1G R1/R2 0.8 0.17 0.8 0.055 0.38 0.038 1.0 0.21 1.0 0.1 0.47 0.047 1.2 0.25 1.2 0.185 0.56 0.056 3. Pulse Test: Pulse Width < 300 /C0109s, Duty Cycle < 2.0%

Figure 1. Derating Curve

Figure 106. VCE(sat) versus IC Figure 107. DC Current Gain

MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series http://onsemi.com PACKAGE DIMENSIONS NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419B −01 OBSOLETE, NEW STANDARD 419B−02. E0.2 (0.008) MM 123 D e A C L 654 −E− b 6 PL SC−88/SC70−6/SOT−363 CASE 419B−02 ISSUE W DIM MIN NOM MAX MILLIMETERS A 0.80 0.95 1.10 A1 0.00 0.05 0.10 b 0.10 0.21 0.30 C 0.10 0.14 0.25 D 1.80 2.00 2.20 0.031 0.037 0.043 0.000 0.002 0.004 0.004 0.008 0.012 0.004 0.005 0.010 0.070 0.078 0.086 MIN NOM MAX INCHES 0.20 REF 0.008 REF HE HE E 1.15 1.25 1.35 e 0.65 BSC L 0.10 0.20 0.30 2.00 2.10 2.20 0.045 0.049 0.053

0.026 BSC

0.004 0.008 0.012 0.078 0.082 0.086 STYLE 1: PIN 1. EMITTER 2 2. BASE 2 3. COLLECTOR 1 4. EMITTER 1 5. BASE 1 6. COLLECTOR 2 /C0466mm inches/C0467SCALE 20:1 0.65 0.025 0.65 0.025 0.50 0.0197 0.40 0.0157 1.9 0.0748 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. SOLDERING FOOTPRINT* SC−88/SC70−6/SOT−363 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 MUN5311DW1T1/D LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative