SMUN5313DW

SMUN5311DW SECOS | Alldatasheet

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Technical content

Digital Small Signal Transistors 18-Dec-2009 Rev. A Page 1 of 28 1 32 6 45 Q 1 Q 2 R 1 R 2 R 1 R 2 RoHS Compliant Product A suffix of “-C” indicates halogen-free.

DESCRIPTION

The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the SMUN5311DW series, two complementary BRT devices are housed in the SOT−363 package which is ideal for low power surface mount applications where board space is at a premium. FEATURE /rhombus3 Simplifies circuit design /rhombus3 Reduces board space /rhombus3 Reduces component count /rhombus3 Available in 8 mm, 7 inch/3000 unit tape and reel /rhombus3 The devices are Pb-Free MAXIMUM RATINGS AND THERMAL CHARACTERISTICS (TA = 25° C unless otherwise noted, common for Q1 and Q2, minus sign for Q1(PNP) omitted) PARAMETER SYMBOL VALUE UNIT Collector - Base Voltage VCBO 50 Vdc Collector - Emitter Voltage VCEO 50 Vdc Collector Currrent – Continuous IC 100 mAdc ONE JUNCTION HEATED THERMAL CHARACTERISTICS Total Device Dissipation, T A=25° C 187(1) 256(2) mW Total Device Dissipation, Derate above 25° C PD 1.5(1) 2.0(2) mW/° C Thermal Resistance, Junction to Ambient R θJA 670(1) 490(2) ° C/W BOTH JUNCTION HEATED THERMAL CHARACTERISTICS Total Device Dissipation, T A=25° C 250(1) 385(2) mW Total Device Dissipation, Derate above 25° C PD 2.0(1) 3.0(2) mW/° C Thermal Resistance, Junction to Ambient R θJA 493(1) 325(2) ° C/W Thermal Resistance, Junction to Lead R θJL 188(1) 208(2) ° C/W Junction Temperature & Storage Temperature T J,TSTG -55~150 ° C Note: 1. FR-4 @ minimum pad 2. FR-4 @ 1.0 x 1.0 inch pad SOT-363 B L F HC JD G K A E A 2.00 2.20 G 0.100 REF. B 2.15 2.45 H 0.525 REF. C 1.15 1.35 J 0.08 0.15 D 0.90 1.10 K 8° E 1.20 1.40 L 0.650 TYP. F 0.15 0.35

Digital Small Signal Transistors 18-Dec-2009 Rev. A Page 2 of 28 ELECTRICAL CHARACTERISTICS (T A = 25° C unless otherwise noted) PARAMETER SYMBOL MIN. TYP . MAX. UNIT TEST CONDITION OFF CHARACTERISTICS Collector-Base Breakdown Voltage V (BR)CBO 50 - - V I C =10 µA, I E=0 Collector-Emitter Breakdown Voltage V (BR)CEO 50 - - V I C =2mA, I B = 0 Collector-Base Cutoff Voltage I CBO - - 100 nA V CB =50V, I E=0 Collector-Emitter Cutoff Current I CEO - - 500 nA V CE =50V, I B=0 SMUN5311DW - - 0.5 SMUN5312DW - - 0.2 SMUN5313DW - - 0.1 SMUN5314DW - - 0.2 SMUN5315DW - - 0.9 SMUN5316DW - - 1.9 SMUN5330DW - - 4.3 SMUN5331DW - - 2.3 SMUN5332DW - - 1.5 SMUN5333DW - - 0.18 SMUN5334DW - - 0.13 Emitter-Base Cutoff Current SMUN5335DW IEBO - - 0.2 mA V EB =6V, IC =0 ON CHARACTERISTICS 3 SMUN5311DW - - 0.25 SMUN5312DW - - 0.25 SMUN5313DW - - 0.25 SMUN5314DW - - 0.25 SMUN5335DW - - 0.25 IC =10mA, IB=0.3mA SMUN5330DW - - 0.25 SMUN5331DW - - 0.25 IC =10mA, IB=5mA SMUN5315DW - - 0.25 SMUN5316DW - - 0.25 SMUN5332DW - - 0.25 SMUN5333DW - - 0.25 Collector-Emitter Saturation Voltage SMUN5334DW VCE(sat) - - 0.25 Vdc IC =10mA, IB=1mA SMUN5311DW 35 60 - SMUN5312DW 60 100 - SMUN5313DW 80 140 - SMUN5314DW 80 140 - SMUN5315DW 160 350 - SMUN5316DW 160 350 - SMUN5330DW 3.0 5.0 - SMUN5331DW 8.0 15 - SMUN5332DW 15 30 - SMUN5333DW 80 200 - SMUN5334DW 80 150 - DC Current Gain SMUN5335DW hFE 80 140 - V CE =10V, IC =5mA Note: 3. Pulse test: pulse width <300 µS, duty cycle<2.0%

Digital Small Signal Transistors 18-Dec-2009 Rev. A Page 3 of 28 ELECTRICAL CHARACTERISTICS (T A = 25° C unless otherwise noted)(Continued) PARAMETER SYMBOL MIN. TYP . MAX. UNIT TEST CONDITION ON CHARACTERISTICS 3 SMUN5311DW - - 0.2 SMUN5312DW - - 0.2 SMUN5314DW - - 0.2 SMUN5315DW - - 0.2 SMUN5316DW - - 0.2 SMUN5330DW - - 0.2 SMUN5331DW - - 0.2 SMUN5332DW - - 0.2 SMUN5333DW - - 0.2 SMUN5334DW - - 0.2 SMUN5335DW - - 0.2 VCC =5V, VB=2.5V, R L=1 K Ω Output Voltage(On) SMUN5313DW VOL - - 0.2 Vdc VCC =5V, VB=3.5V, R L=1 K Ω SMUN5311DW 4.9 - - SMUN5312DW 4.9 - - SMUN5313DW 4.9 - - SMUN5314DW 4.9 - - SMUN5333DW 4.9 - - SMUN5334DW 4.9 - - SMUN5335DW 4.9 - - VCC =5V, VB=0.5V, R L=1 K Ω SMUN5330DW 4.9 - - V CC =5V, VB=0.05V, R L=1 K Ω SMUN5315DW 4.9 - - SMUN5316DW 4.9 - - SMUN5331DW 4.9 - - Output Voltage(Off) SMUN5332DW VOH 4.9 - - Vdc VCC =5V, VB=0.25V, R L=1 K Ω SMUN5311DW 7.0 10 13 SMUN5312DW 15.4 22 28.6 SMUN5313DW 32.9 47 61.1 SMUN5314DW 7.0 10 13 SMUN5315DW 7.0 10 13 SMUN5316DW 3.3 4.7 6.1 SMUN5330DW 0.7 1.0 1.3 SMUN5331DW 1.5 2.2 2.9 SMUN5332DW 3.3 4.7 6.1 SMUN5333DW 3.3 4.7 6.1 SMUN5334DW 15.4 22 28.6 Input Resistor SMUN5335DW 1.54 2.2 2.86 KΩ SMUN5311DW 0.8 1.0 1.2 SMUN5312DW 0.8 1.0 1.2 SMUN5313DW 0.8 1.0 1.2 SMUN5314DW 0.17 0.21 0.25 SMUN5315DW - - - SMUN5316DW - - - SMUN5330DW 0.8 1.0 1.2 SMUN5331DW 0.8 1.0 1.2 SMUN5332DW 0.8 1.0 1.2 SMUN5333DW 0.055 0.1 0.185 SMUN5334DW 0.38 0.47 0.56 Resistor Ratio SMUN5335DW R1/R2 0.038 0.047 0.056 Note: 3. Pulse test: pulse width <300 µS, duty cycle<2.0%

Figure 1. Derating Curve

Figure 106. VCE (sat) versus IC Figure 107. DC Current Gain