SMUN5214DW

SMUN5211DW SECOS | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 8

Technical content

°C/W Characteristic (Both Junctions Heated) Total Device Dissipation T A = 25°C Derate above 25°C P D 250 385 2.0 3.0 mW mW/°C Thermal Resistance – Junction-to-Ambient R qJA 493 325 °C/W Thermal Resistance – Junction-to-Lead R qJL 188 208 °C/W Junction and Storage Temperature T J , T stg –55 to +150 °C Symbol Max UnitNote 1 Note 2 Characteristic (One Junction Heated) Symbol Max UnitNote 1 Note 2 Collector-Base Voltage V CBO 50 Vdc Collector-Emitter Voltage V CEO 50 Vdc Collector Current I C 100 mAdc 256 1.5 2.0 Total Device Dissipation P D 187 mW T A = 25°C Derate above 25°C mW/°C Thermal Resistance – R JA 670Junction-to-Ambient 490 1 32 6 45 Q 1 Q 2 R 1 R 2 R 1 R 2 MARKING DIAGRAM 13 2 6 45 7X = Device Marking MAXIMUM RATINGS (TA = 25°C unless otherwise noted, common for Q 1 and Q 2 ) THERMAL CHARACTERISTICS 1. FR–4 @ Minimum Pad 2. FR–4 @ 1.0 x 1.0 inch Pad The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the SMUN5211DW series, two BRT devices are housed in the SOT–363 package which is ideal for low power surface mount applications where board space is at a premium.  Simplifies Circuit Design  Reduces Board Space  Reduces Component Count  Pb-Free Package is available Any changing of specification will not be informed individual SMUN52XXDW NPN Multi-Chip Built-in Resistors Transistor http://www.SeCoSGmbH.com Elektronische Bauelemente 22-Jun-2007 Rev. A Page 1 of 8 SOT-363 Dimensions in inches and (millimeters) .014(0.35) .006(0.15) .087(2.20) .079(2.00) .055(1.40) .047(1.20) .026TYP (0.65TYP) .096(2.45) .085(2.15) .021REF (0.525)REF .018(0.46) .010(0.26) .006(0.15) .003(0.08) .053(1.35) .045(1.15) .043(1.10) .035(0.90) .039(1.00) .035(0.90) .004(0.10) .000(0.00) o o

DEVICE MARKING , RESISTOR VALUES AND ORDERING INFORMATION Device Package Marking R1(K) R2(K) Shipping SMUN5211DW SOT-363 7A 10 10 3000/Tape&Reel SMUN5214DW SOT-363 7D 10 47 3000/Tape&Reel SMUN5215DW SOT-363 7E 10 open 3 000/Tape&Reel SMUN5216DW SOT-363 7F 4.7 open 3000/Tape&Reel SMUN5230DW SOT-363 7G 1 1 3000/Tape&Reel SMUN5231DW SOT-363 7H 2.2 2.2 3000/Tape&Reel SMUN5232DW SOT-363 7J 4.7 4.7 3000/Tape&Reel SMUN5233DW SOT-363 7K 4.7 47 3000/Tape&Reel SMUN5234DW SOT-363 7L 22 47 3000/Tape&Reel SMUN5235DW SOT-363 7M 2.2 47 3000/Tape&Reel SMUN5236DW SOT-363 7N 100 100 3000/Tape&Reel SMUN5237DW SOT-363 7P 47 22 3000/Tape&Reel SMUN5212DW SOT-363 7B 22 22 3000/Tape&Reel SMUN5213DW SOT-363 7C 47 47 3000/Tape&Reel E L E C T R I C A L C H A R A C T E R I S T I C S ( T A = 2 5 ° C u n l e s s o t h e r w i s e n o t e d , c o m m o n f o r Q 1 a n d Q 2 ) C h a r a c t e r i s t i c S y m b o l Min Typ M a x U n i t O F F C H A R A C T E R I S T I C S C o l l e c t o r - B a s e C u t o ff C u r r e n t ( V C B = 5 0 V , I E = 0 ) I C B O – – 100 n A d c C o l l e c t o r - E m i t t e r C u t o ff C u r r e n t ( V C E = 5 0 V , I B = 0 ) I C E O – – 500 n A d c E m i t t e r - B a s e C u t o ff C u r r e n t SM U N 5 2 1 1 D W ( V E B = 6 . 0 V , I C = 0 ) SM U N 5 2 1 2 D W SM U N 5 2 1 3 D W SM U N 5 2 1 4 D W SM U N 5 2 1 5 D W SM U N 5 2 1 6 D W SM U N 5 2 3 0 D W SM U N 5 2 3 1 D W SM U N 5 2 3 2 D W SM U N 5 2 3 3 D W SM U N 5 2 3 4 D W SM U N 5 2 3 5 D W SM U N 5 2 3 6 D W SM U N 5 2 3 7 D W I E B O – 0 . 5 0 . 2 0 . 1 0 . 2 0 . 9 1 . 9 4 . 3 2 . 3 1 . 5 0 . 1 8 0 . 1 3 0 . 2 0 . 0 5 0 . 1 3 m A d c C o l l e c t o r - B a s e B r e a k d o w n Vo l t a g e ( I C = 1 0 µA , I E = 0 ) V ( B R ) C B O 50 – – V d c C o l l e c t o r - E m i t t e r B r e a k d o w n Vo l t a g e ( N o t e 4 . ) ( IC = 2 . 0 m A , I B= 0 ) V ( B R ) C E O 50 – – V d c 4 . P u l s e Te s t : P u l s e W i d t h < 3 0 0 µs , D u t y C y c l e < 2 . 0 % Any changing of specification will not be informed individual SMUN52XXDW NPN Multi-Chip Built-in Resistors Transistor http://www.SeCoSGmbH.com Elektronische Bauelemente 22-Jun-2007 Rev. A Page 2 of 8

ELECTRICAL CHARACTERISTICS

(T A = 25°C unless otherwise noted, common for Q 1 and Q 2 ,) (Continued) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS (Note 5.) DC Current Gain SMUN521 1DW (V CE = 10 V, I C = 5.0 mA) SMUN5212DW SMUN5213DW SMUN5214DW SMUN5215DW SMUN5216DW SMUN5230DW SMUN5231DW SMUN5232DW SMUN5233DW SMUN5234DW SMUN5235DW SMUN5236DW SMUN5237DW h FE – 160 160 3.0 8.0 100 140 140 350 350 5.0 200 150 140 150 140 Output Voltage (on) (V CC = 5.0 V, V B = 2.5 V, R L = 1.0 kΩ) SMUN521 1DW SMUN5212DW SMUN5214DW SMUN5215DW SMUN5216DW SMUN5230DW SMUN5231DW SMUN5232DW SMUN5233DW SMUN5234DW SMUN5235DW SMUN5213DW SMUN5236DW SMUN5237DW V OL – 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 Vdc (V CC = 5.0 V, V B = 3.5 V, R L = 1.0 kΩ) (V CC = 5.0 V, V B = 5.5 V, R L = 1.0 kΩ) (V CC = 5.0 V, V B = 4.0 V, R L = 1.0 kΩ) Output Voltage (off) (V CC = 5.0 V, V B = 0.5 V, R L = 1.0 kΩ) (V CC = 5.0 V, VB = 0.05 V, RL = 1.0 kΩ) S MUN5230DW (V CC = 5.0 V, VB = 0.25 V, RL = 1.0 kΩ) S MUN5215DW SMUN5216DW SMUN5233DW Collector-Emitter Saturation Voltage (IC = 10mA,IB= 0.3 mA) V CE(sat) – – 0.25 Vdc (IC = 10mA, IB= 5mA) SMUN5230DW/SMUN5231DW (IC = 10mA, IB= 1mA) SMUN5215DW/SMUN5216DW SMUN5232DW/SMUN5233DW/SMUN5234DW V OH 4.9 – – Vdc 5. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0% Any changing of specification will not be informed individual SMUN52XXDW NPN Multi-Chip Built-in Resistors Transistor http://www.SeCoSGmbH.com Elektronische Bauelemente 22-Jun-2007 Rev. A Page 3 of 8

A = 25°C unless otherwise noted, common for Q 1 and Q 2 ,) (Continued) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS (Note 6.) R 1 7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 15.4 1.54 32.9 4.7 1.0 2.2 4.7 4.7 2.2 100 28.6 61.1 6.1 1.3 2.9 6.1 6.1 28.6 2.86 130 61.1 kΩ Resistor Ratio SMUN5211DW/SMUN5212DW SMUN5213DW/SMUN5236DW SMUN5214DW/SMUN5215DW SMUN5216DW/SMUN5230DW SMUN5231DW/SMUN5232DW SMUN5233DW SMUN5234DW SMUN5235DW SMUN5237DW R 1 /R2 0.8 0.17 0.8 0.055 0.38 0.038 1.7 1.0 0.21 1.0 0.1 0.47 0.047 2.1 1.2 0.25 1.2 0.185 0.56 0.056 2.6 6. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0% P D , POWER DISSIPATION (mW) 300 250 200 150 100 T A , AMBIENT TEMPERATURE (°C) Figure 1. Derating Curve