SMTPB BILIN | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 4

Technical content

2.0± 0.15 4 . 5± 0. 1 5 3 . 5± 0. 2 2.3± 0.15 1. 25± 0 . 2 0.203MAX 0.2± 0.05 5. 3 ± 0. 2 CCITTK20 4000 10/700 5/310 100 -- VDE0433 4000 10/700 5/310 100 -- VDE0878 4000 1.2/50 1/20 100 -- IEC-1000-4-5 8/20 100 100 FCC Part 68,lightning surge type A 10/160 200 100 FCC Part 68,lightning surge type B 100 5/320 5/320 25 -- BELLCORE TR-NWT-001089 First level 2/10 500 100 BELLCORE TR-NWT-001089 Second level 2/10 500 -- CNET131-24 0.8/310 100 -- SCHEMATIC DIAGRAM IeveI 4 IeveI 4 10/700 5/310 1.2/50 1500 800 0.5/700 4000 2500 1000 Complies with the following standards: Peak surge voltage (V) Necessary resistor SMTPB---SERIESGALAXY ELECTRICAL Repetitive peak pulse current:I PP=100A,10/1000 The SMTPB series are designed for protecting sensitive action.Their characteristic response to transien over- transient voltages induced by AC power lines. The devices provide bidirectional protection by crowbar sensitive telecommunication equipment. TELECOMMUNICATION PROTECTION

FEATURES

voltages makes them particularly suited to protect volatge Holding current:IH=150mA min

DESCRIPTION

BREAKDOWN VOLTAGE: 62 --- 270 V POWER DISSIPATION: 5.0 W SMB Bidirectional crowbar protection Voltage range:from 62V to 270V. Voltage waveform Current waveform Admissible Ipp (A) BLGALAXY ELECTRICALDocument Number 0286006 1. www.galaxycn.com BL telecommunication equipment against lightning and Dimensions in millimeters

V I IPP IH IRM IBO VRM VBR VBO IR Tamb=50 5.0 W s s 100 150 tp=20ms 50 A tp=20ms 25 A2s VRM 5 kV/µS -55to+150 150 230 Symbol Value Unlt Rth(j-l) 20 Rth(j-a) 75 I H C min. note3 max. note4 mA PF 2 56 62 50 82 800 150 300 2 90 100 50 133 800 150 200 Symbol VRM IRM VR VBR VBO IH IBO IPP C SMTPB---SERIESGALAXY ELECTRICAL Note3: See test circuit2. Note4: VR=1V,F=1MHz,refer to fig.3 for C versus VR. Breakover voltage Holding current Breakov er current Peak pulse current Continuous reverse voltage Breakdown voltage Capacitance Parameter Stand-off voltage ELECTRICAL CHARACTERISTICS (T A=25 Leakage current at stand-off voltage 2 243 270 50 36 0 800 150 200SMTPB270 2 61 68 50 90 800 150 300 2 108 12 0 50 160 800 150 200 2 117 130 50 173 800 150 200 2 162 18 0 50 240 800 150 200 2 180 20 0 50 267 800 150 200 2 19 8 220 50 293 800 150 200 2 216 240 50 320 800 150 200 SMTPB180 SMTPB200 SMTPB220 SMTPB240 SMTPB68 SMTPB100 SMTPB120 SMTPB130 SMTPB62 Type IRM @ V RM max. A V VBO @ I BO max. note1 note2 V mA Parameter Junction to leads (L lead=10mm) Junction to ambient on printed circuit (Llead=10mm) VR @ I R min. V µA Storage temperature range Maximum junction temperature Maximum lead temperature for soldering during 10s at 5mm form case Power dissipation on infinite heatsink Peak pulse current Non repetitive surge peak on-state current I2t vallue for fusing Critical rate of rise of off-state voltage ITSM I2t dV/dt Tstg Tj THERMAL RESISTANCES Symbol UnitValue ABSOLUTE MAXIMUM RATINGS (T A=25 P Ipp Parameter TL BLGALAXY ELECTRICALDocument Number 0286006 2. www.galaxycn.com BL Note1:IR measured at V R guarantees V BRmin≥VR Note 2:Measured at 50H z(1 cycle)-See test circuit 1. 2/10 s A 500

relay. Transformer 220V/800V k IBO measure 220V 140 240 D.U.T VBO measure tp=20ms VpD.U.T. R Surge generator VBAT=-48V RATINGS AND CHARACTERISTIC CURVES SMTPB---SERIES This is a GO-NO GOTest which allows to confirm the holding current (IH) level in a functionaltest circuit. TEST PROCEDURE : 1) Adjust the current level at the IH value by short circuiting the D.U.T. 2) Fire the D.U.T with a surge current : Ipp = 10A , 10/1000µ s. 3) The D.U.T will come back off-state within 50ms max. TEST CIRCUIT 1 FOR IBO AND VBO PARAMETERS: TEST CIRCUIT 2 FOR IH PARAMETER: TEST PROCEDURE : Pulse Test duration (tp = 20m s): - For Bidirectional devices = Sw itchK is closed - For Unidirectional devices = Sw itch K is open. V OUT Selection - Device with VBO < 200 Volt - VOUT = 250 VRMS, R1 = 140 Ω. - Device with VBO

200 Volt

  • V OUT = 480 VRMS, R2 = 240Ω. BLGALAXY ELECTRICALDocument Number 0286006 3. www.galaxycn.com

T J =25℃ VT (V) FIG.2 -- RELATIVE VARIATION OF HOLDING DDDD DCURRENT VERSUS JUNCTION SSSS CTEMPERATURE. FFFFFIG.3 -- RELATIVE VARIATION OF JUNCTION VVVVVVVV CAPACITANCE VERSUS REVERSE BBBBBBBB APPLIED VOLTAGE FIG.4 -- ON-STATE CURRENT VERSUS ON-STATE YY YYY VOLTAGE FIG.5 -- TRANSIENT THERMAL IMPEDANCE JUNCTION TO AMBIENT VERSUS PULSE DURATION RATINGS AND CHARACTERISTIC CURVES SMTPB---SERIES FIG.1 -- NON REPETITIVE SURGE PEAK ON-STATE VVVVVV CURRENT VERSUS OVERLOAD DURATION VV (TJ INItIAL=25°C). BLGALAXY ELECTRICAL www.galaxycn.com Document Number 0286006 4. 1E-2 1E-1 1E+0 1E+1 1E+2 1E+3 F=50Hz60 t(s) ITSM(A) 0.8 0.6 0.2 0.4 0.0-40 -20 20 06 0 40 80 100 1.0 1.2 1.4 2.0 1.6 1.8 TJ(℃) IH[TJ]/IH[TJ=25℃] 1.0 0.5 0.1 1 10010 VR(V) 0.2 300 F=1MHZ C[VR]/C[VR=1V] 0.1 0.01 0.1 1.0 10 100 1000 5000 100 tp(s) ZTH(J-a)( / IT(A)