SMTPAXXX_03 BILIN | Alldatasheet

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Technical content

2.0± 0.15 4.5± 0.15 3.5± 0.2 2.3± 0.15 1.25± 0. 2 0.203MAX 0.2± 0.05 5. 3± 0 . 2 SMB GR-1089 Core first level 2/10 500 100 GR-1089 Core second level 2/10 2/10 500 24 GR-1089 Core Intra-building 2/10 2/10 100 0 ITU-T-K20/K21 10/700 5/310 150 37.5 ITU-T-K20 (IEC61000-4-2) 1/60 ns 0 VDE0433 0 5/310 100 21.5 VDE0878 1.2/50 1/20 100 IEC-1000-4-5 10/700 1.2/50 100 100 21.5 FCCPart68,lightning surgetypeA 10/160 200 100 12.5 6.5 FCCPart68,lightning surgetypeB 9/720 5/320 25 0

FEATURES

following standards: 2500 1000 Peak surge voltage (V) 1500 Necessary resistor SM TPAxxx GALAXY ELECTRICAL Holding current: IH=150mA min Repetitive peak pulse current: The SMTPAxxx s eries has been des igned to protect transient induced by AC power lines.The package/die Bidirectional crowbar protection size ratio has been optimized by using the SMB package. Low leakage current: IR=2μA m ax SCHEMATIC DIAGRAM BREAKDOWN VOLTAGE: 62 --- 270 V PEAK PULSE POWER: 5000 W 5000 Voltage range from 62V to 270V Low capacitance from 15pF to 30pF typ.@50V Voltage waveform Current waveform Required peak current (A) TELECOMMUNICATION PROTECTION

DESCRIPTION

IPP=50A,10/1000μs. telecommunication equipment against lightning and BLGALAXY ELECTRICALDocument Number 0286002 1. www.galaxycn.com BL Dimensions in millimeters

V I IPP IH IRM IBO VRM VBR VBO IR s5 0 8/20μs 100 10/560 μs5 5 5/310 μs6 5 10/160 μs7 5 1/20μs 100 2/10μs 150 8/20μs2 . 5 k A t=20ms 30 t=16.6ms 32 t=0.2s 17 t=2s 9 t=16.6ms 8.5 t=20ms 9 -55to+150 150 260 Symbol Value Unlt Rth(j-l) 20 Rth(j-a) 100 I H C C min. Note3 typ. Note4 typ. Note5 μA V mA V V mA V mA mA pF pF 56 62 85 82 150 30 50 61 68 93 90 150 30 45 90 100 135 133 150 2 0 40 108 120 160 160 150 20 40 117 130 173 173 150 20 35 162 180 235 240 150 15 30 180 200 262 267 150 15 30 198 22 0 285 293 150 15 30 216 24 0 300 320 150 15 30 243 27 0 350 360 150 15 30 Symbol VRM IRM VR VBR VBO IH IBO IPP C Note4: VR=50V bias, VRMS =1V, F=1MHz. Note5: VR=2V bias, VRMS =1V, F=1MHz. 2 1.0 800 800 SMTPA68 T68 SMTPA100 T100 SMTPA120 T12 0 SMTPA130 T13 0 SMTPA180 T18 0 A THERMAL RESISTANCES TL Storage temperature range Maximum junction temperature Ipp Repetitive peak pulse current STATIC VBO @ IBO max. Note2 Parameter Junction to leads Junction to ambient with recommended footprint DYNAMIC V BO @ I BO max. Note1 ABSOLUTE MAXIMUM RATINGS (T A=25 ParameterSymbol UnitValue A IFSM IFS Tstg Tj Storage temperature range Maximum junction temperature Fail safe mode: maximum current Non repetitive surge peak on-state current (Sinusoidal) I 2t I2t vallue for fusing A2s IR @ VR max. SMTPA200 T2 00 SMTPA220 T22 0 SMTPA62 T62 Type IRM @ VRM max. SMTPA240 T24 0 SMTPA270 T27 ELECTRICAL CHARACTERISTICS (T A=25 Leakage current at stand-off voltage Capacitance Parameter Stand-off voltage SM TPAxxx GALAXY ELECTRICAL Note : See functional break over vo ltage test circuit 1. Note2: See test circuit2. Note3: See functional holding curre nt test circuit 3. Break over voltage Holding current Break over current Peak pulse current Continuous reverse voltage Breakdown voltage BLGALAXY ELECTRICALDocument Number 0286002 2. www.galaxycn.com BL Device Marking Code

D.U.T tp=20ms k IBO measurement VBO measurement U 10μF 2Ω 45Ω 83Ω 66Ω47Ω 0.36nF 46μH KEY TEK 'SYSTEM 2' GENERATOR WITH PN2461 MODULE U 60μF 250Ω 47Ω 12Ω 46μH KEY TEK 'SYSTEM 2' GENERATOR WITH PN2461 MODULE 26μH RATINGS AND CHARACTERISTIC CURVES SMT PAxxx TEST PROCEDURE : Pulse Test duration (tp = 20ms): - For Bidirectional devices = Sw itch K is closed - For Unidirectional devices = Sw itch K is open. V OUT Selection - Device w ith V BO < 200 Volt - V OUT = 250 VRMS, R1 = 140 Ω. - Device w ith V BO

200 Volt

  • V OUT = 480 VRMS, R2 = 240Ω. TEST CIRCUIT 1 FOR DYNAMIC IBO AND VBO PARAMETERS: TEST CIRCUIT 2 FOR IBO AND VBO PARAMETERS: 100V/μs, di/dt<10A/μs, Ipp=50A 1kV/μs, di/dt<10A/μs, Ipp=10A BLGALAXY ELECTRICALDocument Number 0286002 3. www.galaxycn.com

D.U.T. R VBAT=-48V Surge generator MIN. MAX. MIN. MAX. A1 1.9 2.45 0.075 0.096 A2 0.05 0.2 0.002 0.008 b 1.95 2.2 0.077 0.087 c 0.15 0.41 0.006 0.016 E 5.1 5.6 0.201 0.22 E1 4.05 4.6 0.159 0.181 D 3.3 3.95 0.13 0.156 L 0.75 1.6 0.03 0.063 SMT PAxxxRATINGS AND CHARACTERISTIC CURVES TEST CIRCUIT 3 FOR IH PARAMETERS: FOOT PRINT in millimeters (inches) This is a GO-NO GO Test w hich allow s to confirm the holding current (IH) level in a functional test circuit. TESTPROCEDURE : 1) Adjust the current level at the IH value by short circuiting the AK of the D.U.T. 2) Fire the D.U.T w ith a surge current : Ipp = 10A , 10/1000 ms. 3) The D.U.T w ill come back off-state w ithin 50ms max. PACKAGE MECHANICAL DATA SMB(JEDEC DO-214AA) REF. DIMENSIONS MILLIMETERS INCHES BLGALAXY ELECTRICALDocument Number 0286002 4. www.galaxycn.com D E C L b A1A2 2.3(0.09)

TRISIL PROTECTION:TM Ipp=50A RATINGS AND CHARACTERISTIC CURVES part number marking package weight base QTY delivery mode SMTPA62 U01 SMTPA68 U05 SMTPA100 U13 SMTPA120 U17 SMTPA130 U19 SMTPA180 U25 SMTPA200 U27 SMTPA220 U31 SMTPA240 U35 SMTPA270 U39 FIG.1 -- NON REPETITIVE SURGE PEAK ON-STATE FIG.2 -- ON-STATE VOLTAGE VERSUS ON-STATE CURRENT VERSUS OVERLOAD DURATION CURRENT (TYPICAL VALUES). ORDER CODE S M T P Axxx SMB 0.11g 5000 tape & reel

ORDERING INFORMATION

BLGALAXY ELECTRICALDocument Number 0286002 5. www.galaxycn.com 0 1E+31E-2 1E-1 1E+0 1E+1 1E+2 t(s)5 F=50Hz ITSM(A) VT(V) 23 45 8 769 1 0 IT(A)

RATINGS AND CHARACTERISTIC CURVES S M T P Axxx FIG.3 -- RELATIVE VARIATION OF HOLDING CURRENT VERSUS JUNCTION TEMPERATURE FIG.4 -- RELATIVE VARIATION OF BREAKOVER VOLTAGE VERSUS JUNCTION TEMPERATURE FFFFFIG.5 -- RELATIVE VARIATION OF LEAKAGE CURRENT VERSUS JUNCTION TEMPERATURE (TYPICAL VALUES). FIG.6 -- RELATIVE VARIATION OF THERMAL IMPEDANCE VERSUS PULSE DURATION FIG.7 -- RELATIVE VARIATION OF JUNCTION CAPACITANCE VERSUS REVERSE VOLTAGE APPLIED (TYPICAL VALUES) BLGALAXY ELECTRICAL www.galaxycn.com Document Number 0286002 6. 2000 100 TJ( 1000 50 100 75 125 IRM[TJ]/IRM[TJ=25 VR=VRM 0.8 0.6 0.2 0.4 0.0-40 -20 20 06 0 40 80 100 1.0 1.2 1.4 2.0 1.6 1.8 TJ(°C) 120 1.5 1 10010 VR(V).5 300 F=1MH Z 522 0 5 0 2.5 C[VR]/C[V R=50V] 1.02 .96 .98 .94 -40 -20 20 01 2 0 40 60 80 100 1.04 1.08 1.06 TJ ( 1E+1 1E-1 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 1E+0 1E+2 tp(s) 5E+2 ZTH(J-A) ( /W)