SMTPA STMICROELECTRONICS | Alldatasheet

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SMTPA SERIES TRISIL October 1998 - Ed: 7A SCHEMATIC DIAGRAM BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWN VOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT = 150 mA min REPETITIVE PEAK PULSE CURRENT : I PP = 50 A, 10/1000µs.

FEATURES

(JEDEC DO-214AA) The SMTPAxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines.

DESCRIPTION

FOLLOWING STANDARDS: Peak Surge Voltage (V) Voltage Waveform (µs) Current Waveform (µs) Admissible Ipp (A) Necessary Resistor (Ω ) (CCITT) ITU-K20 1000 10/700 5/310 25 - (CCITT) ITU-K17 1500 10/700 5/310 38 - VDE0433 2000 10/700 5/310 50 - VDE0878 2000 1.2/50 1/20 50 - IEC-1000-4-5 level 3 level 4 1.2/50 100 FCC Part 68, lightningsurge type A 1500 800 12.5 6.5 FCC Part 68, lightningsurge type B 1000 9/720 5/320 25 - BELLCORE TR-NWT-001089 First level 2500 1000 150 11.5 BELLCORE TR-NWT-001089 Second level 5000 2/10 2/10 150 11.5 CNET l31-24 1000 0.5/700 0.8/310 25 -

Symbol Parameter Value Unit R th(j-l)Junction to leads. 20 °C/W R th(j-a) Junction to ambient on printed circuit with standard footprint dimensions. 100 °C/W THERMAL RESISTANCES Type Marking I RM @V RM IR @V R VBO @I BO IH C max. max. note 1 max. note2 max. min. note3 max. note4 Laser µAV µAV V m A m A p F SMTPA62 SMTPA68 SMTPA100 SMTPA120 SMTPA130 SMTPA180 SMTPA200 SMTPA220 SMTPA240 SMTPA270 U01 U05 U13 U17 U19 U25 U27 U31 U35 U39 108 117 162 180 198 216 243 100 120 130 180 200 220 240 270 133 160 173 240 267 293 320 360 800 800 800 800 800 800 800 800 800 800 150 150 150 150 150 150 150 150 150 150 150 150 100 100 100 100 100 100 100 100 All parameters tested at 25°C, except where indicated. Symbol Parameter VRM Stand-off voltage IRM Leakage current at stand-off voltage VR ContinuousReverse voltage VBR Breakdown voltage VBO Breakover voltage IH Holding current IBO Breakover current IPP Peak pulse current C Capacitance ELECTRICAL CHARACTERISTICS (Tamb =2 5°C) Note 1: IR measured at VR guaranteeVBRmin ≥ VR Note 2: Measured at 50 Hz (1 cycle) - See test circuit 1. Note 3: See test circuit 2. Note 4: VR = 1V, F = 1MHz. Refer to fig.3 for C versus VR . Symbol Parameter Value Unit P Power dissipation Tlead=5 0 °C5 W IPP Peak pulse current 10/1000 µs 8/20µs 100 A ITSM Non repetitive surge peak on-state current tp = 20 ms 30 A dV/dt Critical rate of rise of off-state voltage VRM 5K V / µs Tstg Tj Storage temperaturerange Maximum junction temperature - 55 to + 150 150 TL Maximum lead temperaturefor soldering during 10 s. 260 °C ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C) SMTPA xxx

TEST CIRCUIT 1 FOR IBO and VBO parameters: TEST PROCEDURE : Pulse Test duration (tp = 20ms): - For Bidirectional devices = SwitchK is closed - For Unidirectional devices = Switch K is open. VOUT Selection - Device with VBO < 200 Volt -VOUT = 250 VRMS ,R1 = 140Ω . - Device with VBO ≥ 200 Volt -VOUT = 480 VRMS ,R2 = 240Ω . TEST CIRCUIT 2 for IH parameter. This is a GO-NOGO Test which allows to confirm the holdingcurrent (IH ) level in a functional test circuit. TEST PROCEDURE : 1) Adjust the currentlevel at the IH value by short circuiting the AK of the D.U.T. 2) Fire the D.U.T with a surge Current : Ipp = 10A , 10/1000µs. 3) The D.U.T will come back off-state within 50 ms max. 220V static relay. 240 140 D.U.T V BO measureIBO measure tp= 20ms K Transformer 220V/800V Auto Transformer 220V/2A Vout R -VP VBAT = - 48 V Surge generator D.U.T. SMTPA xxx

TSM (A) Fig. 1:Non repetitive surge peak on-state current versus overload duration (Tj initial=25°C). Fig. 2:Relative variation of holding current versus junction temperature. tp(s) Fig. 5:Transient thermal impedance junction to ambient versus pulse duration (for FR4 PC Board with Tlead= 10 mm). V (V)R Fig. 3:Relative variation of junction capacitance versus reverse applied voltage (typical values). Note:For VRM upper than 56V, the curve is ex- trapolated (dotted line). I (A)T V (V)T Fig. 4:On-state current versus on-state voltage (typical values). SMTPA xxx

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap- proval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics  1998 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. http://www.st.com SM TPA 100 TRISIL PROTECTION 50 A VOLTAGE SURFACE MOUNT PACKAGE MECHANICAL DATA. SMB (JEDEC DO-214AA) MARKING : Logo,date code, type code. REF. DIMENSIONS Millimeters Inches Min. Max. Min. Max. A1 1.90 2.45 0.075 0.096 A2 0.05 0.20 0.002 0.008 b 1.95 2.20 0.077 0.087 c 0.15 0.41 0.006 0.016 E 5.10 5.60 0.201 0.220 E1 4.05 4.60 0.159 0.181 D 3.30 3.95 0.130 0.156 L 0.75 1.60 0.030 0.063 FOOT PRINT DIMENSION (in millimeters) SMB 1.52 2.75 2.3 1.52 Packaging : Standard packaging is in tape and reel Weight :0.12g E C L D b SMTPA xxx