SMTA5-300

SMTA5-300 SEMPO | Alldatasheet

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Symbol Test Conditions UnitValueParameter A kA IGT ITAVM ITRMS ITSM i t (di/dt)cr (dv/dt)cr I /IRRM DRM VRRM VDRM VRSM VTM rT VGT VGD IGD IH IL i t-value average on-state current maximum RMS on-state current surge-current critical rate of rise of on-state current critical rate of rise of off-state volvage off-state Leakage current reverse repeat Peak value voltage off state repeat Peak value voltage non-repetitive peak reverse voltage on-state voltage slope resistance gate trigger voltage gate trigger current gate non-trigger voltage gate non-trigger current holding current latching current O T =100 CC T =TVJ VJM O T =25 C; t =10msC P T =T ; t =10msVJ VJM P T =T ; V =0.67·V ;VJ VJM D DRM f=50 Hz; i =3A;GM di /dt=6A/µsG T =T ; V =0.67·V ;VJ VJM D DRM gate open T =T ; V =V ; V =VVJ VJM R RRM D DRM O T =T ; 180 C sine wave,VJ VJM

50 Hz; gate open

T =TVJ VJM T =T ; I =800AVJ VJM TM T =TVJ VJM O T =25 C; V =12V; gate openVJ D O T =25 C; V =12VVJ D T =T ;V =0.67·VVJ VJM D DRM T =T ;V =0.67·VVJ VJM D DRM O T =25 C; V =12V;VJ D t =20µs;i =3A;G GM di /dt=6A/µsG A kA ·s A/µs V/µs mA V V V V mW V mA V mA mA mA 300 520 4.8 4.3 115 92.5 250 1000 100 5000-6500 5000-6500 5100-6600 2.35 2.3 2.5 350 0.4 350 450 O T =25 C; V =12VVJ D Phase Control Thyristor SMTA5-300 Type VRSM V ,RRM VDRM SMT - 00- SMTA5-300-52 SMTA5-300-55 SMTA5-300-60 SMTA5-300-65 A5 3 50 5100 5300 5600 6100 6600 5000 5200 5500 6000 6500 O T =25 C; t =10msC P T =T ; t =10msVJ VJM P SEMPO Electronic Limited www.sempoel.com

RthJÑ F W à recovered charge threshold voltage working junction temperature maximum working junction temperature storage temperature thermal resistance; junction to case clamping force weight maximum allowable acceleration T =TVJ VJM V O C O C O C K/W kN g m/s 3.5 1.20 -40...+125 125 -40...+125 0.045 280 tgd delay time O T =25 C;V =0.5·V ;VJ D DRM i =3A; di /dt=6A/µsGM G tq turn-off time T =T ; I =I ;VJ VJM T TAVM t =200µs; di /dt=10A/µs;P R V =0.67·V ;V =100V;D DRM R dV /dt=20V/µsD µs µs 500 T =T ; I =I ;di /dt=10A/µs;VJ VJM T TAVM R V =0.5·V ;V =0.8·VR RRM RM RRM RthÑH thermal resistance; case to heatsink K/W0.008 DC, two-sided cooling two-sided cooling SEMPO Electronic Limited www.sempoel.com 20° 2-i3.5H 2 i58 max 26.5 i34 i34 i53

0 0.5 1 1.5 2 2.5 3 3.5 1200 1000 800 600 400 200 I [A] T V [V]T Limiting on-state characteristic i = f (V )T T Ò = TVj Vj max SEMPO Electronic Limited www.sempoel.com max.typ.

0.5 0.2 10 20 50 100 200 500 1000 2000 5000 10000 i [mA]G Gate characteristic V =f(i ) with triggering area for V = 6VG G D Maximum rated peak gate power dissipation P = f (t ):GM g -40°Ñ +25°Ñ +125°Ñ a - 20 W(10ms) b - 40 W(1ms) c - 60 W(0.5ms) SEMPO Electronic Limited www.sempoel.com ñ b a

Features: C Hermetic metal case with ceramic insulator C Capsule packages for double sided cooling C International standard case C Amplifying gates Typical Applications: C DC motor control C AC motor soft starter C Controlled rectifiers C AC controllers 0.001 0.01 0.1 1 t [s] 10 100 0.01 0.02 0.03 0.04 0.05 0.06 Z [K/W th JC Transient thermal impedance Z = f(t)thJC DC, two-sided cooling SEMPO Electronic Limited www.sempoel.com