SMT002N13G1E

SMT002N13G1E SILIKRON | Alldatasheet

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Silikron Microelectronics (Suzhou) Co.,Ltd www.silikron.com Version : Preliminary page 1 of 5 MainProductCharacteristics: FeaturesandBenefits Description: Absolute Max Rating: Symbol Parameter Max. Units ID@TA =25°C ContinuousDrainCurrent,VGS @ 10V① 7.2 A IDM PulsedDrainCurrent② 28.8 PD @TA =25°C PowerDissipation③ 1.34 W VDS Drain-SourceVoltage 20 V VGS Gate-to-SourceVoltage ±10 V TJ TSTG OperatingJunctionandStorageTemperatureRange -55to+150 °C VDSS 20V RDS(on) 12.3mΩ(typ.) ID 7.2A SchematicDiagram  AdvancedMOSFETprocesstechnology  Special designed for PWM, load switching and generalpurposeapplications  Ultralowon-resistancewithlowgatecharge  Fastswitchingandreversebodyrecovery Itutilizesthelatestprocessingtechniquestoachievethehighcelldensityandreducestheon-resistancewith highrepetitiveavalancherating.Thesefeaturescombinetomakethisdesignanextremelyefficientandreliable deviceforuseinpowerswitchingapplicationandawidevarietyofotherapplications. SOT-23

Silikron Microelectronics (Suzhou) Co.,Ltd www.silikron.com Version : Preliminary page 2 of 5 Thermal Resistance Symbol Characterizes Typ. Max. Units RθJA Junction-to-Ambient④ — 93 ℃/W Electrical Characterizes @TA=25℃unlessotherwisespecified Symbol Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Sourcebreakdownvoltage 20 — — V VGS =0V,ID =250μA RDS(on) StaticDrain-to-Sourceon-resistance — 12.3 16 mΩ VGS=4.5V,ID =5A — 15.6 20.7 mΩ VGS=2.5V,ID =4A VGS(th) Gatethresholdvoltage 0.5 — 1 V VDS =VGS,ID =250μA IDSS Drain-to-Sourceleakagecurrent — — 1 μA VDS =20V,VGS =0V IGSS Gate-to-Sourceforwardleakage — — ±10 μA VGS=±10V,VDS=0V Qg Totalgatecharge — 9 — nC ID =5A, VDS=10V, VGS =4.5V Qgs Gate-to-Sourcecharge — 1.5 — Qgd Gate-to-Drain("Miller")charge — 2.1 — td(on) Turn-ondelaytime — 12 — ns VGS=4.5V,VDS=10V, RGEN=3Ω RL=2Ω tr Risetime — 35 — td(off) Turn-Offdelaytime — 56 — tf Falltime — 52 — Ciss Inputcapacitance — 672 — pF VGS =0V VDS =10V ƒ=1MHz Coss Outputcapacitance — 152 — Crss Reversetransfercapacitance — 91 — Source-Drain Ratings and Characteristics Symbol Parameter Min. Typ. Max. Units Conditions IS ContinuousSourceCurrent (BodyDiode) — — 7.2 A MOSFETsymbol showing the integralreverse p-njunctiondiode. ISM PulsedSourceCurrent (BodyDiode) — — 28.8 A VSD DiodeForwardVoltage — — 1.2 V IS=5A,VGS=0V

Silikron Microelectronics (Suzhou) Co.,Ltd www.silikron.com Version : Preliminary page 3 of 5 Test Circuits and Waveforms EAS Test Circuit: Gate Charge Test Circuit: Switching Time Test Circuit: Switching Waveforms: Notes: ①Calculated continuouscurrentbased on maximumallowablejunction temperature. ②Repetitive rating;pulse widthlimitedby max.junction temperature. ③Thepower dissipation PD is based onmax.junction temperature,using junction-to-casethermal resistance. ④The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a stillairenvironmentwith TA =25 ℃.

Silikron Microelectronics (Suzhou) Co.,Ltd www.silikron.com Version : Preliminary page 4 of 5 Mechanical Data： Symbol Dimensionsin Millimeter Symbol Dimensions inMillimeter Min Max Min Max L 2.2 2.7 C 1.30Max L1 0.45 0.65 C1 0.90 1.20 A 1.15 1.50 c 0.05 0.20 B 2.70 3.10 K 0 0.10 E 1.70 2.10 M 0.20Min E1 0.85 1.05 P 7º b 0.35 0.55

Silikron Microelectronics (Suzhou) Co.,Ltd www.silikron.com Version : Preliminary page 5 of 5 ATTENTION: ■ AnyandallSilikronproductsdescribedorcontainedhereindonothavespecificationsthatcanhandleapplications thatrequireextremelyhighlevelsofreliability,suchaslife-supportsystems,aircraft'scontrolsystems,orother applicationswhosefailurecanbereasonablyexpectedtoresultinseriousphysicaland/ormaterialdamage. ConsultwithyourSilikronrepresentativenearestyou beforeusinganySilikronproductsdescribedorcontained hereininsuchapplications. ■ Silikronassumesnoresponsibilityforequipmentfailuresthatresultfromusingproductsatvaluesthatexceed, evenmomentarily,ratedvalues(suchasmaximumratings,operatingconditionranges,orotherparameters)listed inproductsspecificationsofanyandallSilikronproductsdescribedorcontainedherein. ■ SpecificationsofanyandallSilikronproductsdescribedorcontainedhereinstipulatetheperformance, characteristics,andfunctionsofthedescribedproductsintheindependentstate,andarenotguaranteesofthe performance,characteristics,andfunctionsofthedescribedproductsasmountedinthecustomer’sproductsor equipment.Toverifysymptomsandstatesthatcannotbeevaluatedinanindependentdevice,thecustomer shouldalwaysevaluateandtestdevicesmountedinthecustomer’sproductsorequipment. ■ SilikronMicroelectronics(Suzhou)Co.,Ltd.strivestosupplyhigh-qualityhigh-reliabilityproducts.However,anyand allsemiconductorproductsfailwithsomeprobability.Itispossiblethattheseprobabilisticfailurescouldgiverise toaccidentsoreventsthatcouldendangerhumanlives,thatcouldgiverisetosmokeorfire,orthatcouldcause damagetootherproperty.Whendesigningequipment,adoptsafetymeasuressothatthesekindsofaccidentsor eventscannotoccur.Suchmeasuresincludebutarenotlimitedtoprotectivecircuitsanderrorpreventioncircuits forsafedesign,redundantdesign,andstructuraldesign. ■ IntheeventthatanyorallSilikronproducts(includingtechnicaldata,services)describedorcontainedhereinare controlledunderanyofapplicablelocalexportcontrollawsandregulations,suchproductsmustnotbeexported withoutobtainingtheexportlicensefromtheauthoritiesconcernedinaccordancewiththeabovelaw. ■ Nopartofthispublicationmaybereproducedortransmittedinanyformorbyanymeans,electronicormechanical, includingphotocopyingandrecording,oranyinformationstorageorretrievalsystem,orotherwise,withoutthe priorwrittenpermissionofSilikronMicroelectronics(Suzhou)Co.,Ltd. ■ Information(includingcircuitdiagramsandcircuitparameters)hereinisforexampleonly;itisnotguaranteedfor volumeproduction.Silikronbelievesinformationhereinisaccurateandreliable,butnoguaranteesaremadeor impliedregardingitsuseoranyinfringementsofintellectualpropertyrightsorotherrightsofthirdparties. ■ Anyandallinformationdescribedorcontainedhereinaresubjecttochangewithoutnoticedueto product/technologyimprovement,etc.Whendesigningequipment,refertothe"DeliverySpecification"forthe Silikronproductthatyouintendtouse.