SMS840 SECOS | Alldatasheet

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Technical content

0.13A , 50V , R DS(ON) 10 ΩΩ ΩΩ P-Channel Enhancement MOSFET Elektronische Bauelemente 25-Nov-2011 Rev. A Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. Top View A L C B D G H JF K E 1 2 SOT -23 RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free

FEATURES

/circle6 Low On-Resistance : 10 Ω /circle6 Low Input Capacitance: 30PF /circle6 Low Out Put Capacitance : 10PF /circle6 Low Threshold : 2V /circle6 Fast Switching Speed : 2.5ns

APPLICATIONS

/circle6 DC-DC Converter /circle6 Cellular & PCMCIA Card /circle6 Cordless Telephone /circle6 Power Management in Portable and Battery etc MARKING PD

PACKAGE INFORMATION

(T A=25° C unless otherwise specified) Parameter Symbol Rating Unit Drain-Source Voltage VDSS -50 V Continuous Gate-Source Voltage V GSS ±20 V Continuous Drain Current @TA=25° C ID -130 mA Pulsed Drain Current(tp ≤10us) IDM -520 mA Power Dissipation @T A=25° C PD 225 mW Thermal Resistance, Junction to Ambient R θJA 556 ° C/W Junction and Storage Temperature Range TJ, T STG -55~150 ° C G 1 D 3 P-Channel REF. Millimeter REF. Millimeter Min. Max. Min. Max. A 2.70 3.04 G - 0.18 B 2.10 2.80 H 0.40 0.60 C 1.20 1.60 J 0.08 0.20 D 0.89 1.40 K 0.6 REF. E 1.78 2.04 L 0.85 1.15 F 0.30 0.50

0.13A , 50V , R DS(ON) 10 ΩΩ ΩΩ P-Channel Enhancement MOSFET Elektronische Bauelemente 25-Nov-2011 Rev. A Page 2 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (T A=25° C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Teat Conditions Static Characteristics 1 Drain-Source Breakdown Voltage BV DSS -50 - - V V GS =0, I D = -250 µA Zero Gate Voltage Drain Current I DSS - - -0.1 µA VGS =0, V DS = -25V - - -15 V GS =0, V DS = -50V Gate-Source Leakage Current I GSS - - ±60 µA V GS =±20V, V DS =0 Gate-Source Threshold Voltage V GS(th) -0.8 - -2 V V DS =V GS , I D = -1mA Static Drain-Source On Resistance R DS(ON) - 5 10 Ω V GS = -5V, I D = -0.1A Forward Transconductance g FS 50 - - mS V DS = -25V, ,ID = -0.1A, f=1.0KHz Dynamic Characteristics Input Capacitance C iss - 30 - pF V DS = -5V, V GS =0, f=1MHz Output Capacitance C oss - 10 - Reverse Transfer Capacitance C rss - 5 - Switching Characteristics 2 Turn-On Delay Time T d(ON) - 25 - nS VDD = -15V, ,I D = -2.5A, R L=50 Ω, Turn-Off Delay Time T d(OFF) - 16 - Rise Time Tr - 1 - Fall Time Tf - 8 - Gate Charge Q T - 6000 - pC Source-Drain Diode Characteristics Continuous Current I S - - 0.13 A Pulsed Current I SM - - 0.52 Forward Voltage 2 V SD - -2.5 - V Notes: 1. Pulse Test : PW ≤300us, Duty Cycle ≤2%. 2. Switching Time is Essentially Independent of Operating Temperature.

0.13A , 50V , R DS(ON) 10 ΩΩ ΩΩ P-Channel Enhancement MOSFET Elektronische Bauelemente 25-Nov-2011 Rev. A Page 3 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVE

0.13A , 50V , R DS(ON) 10 ΩΩ ΩΩ P-Channel Enhancement MOSFET Elektronische Bauelemente 25-Nov-2011 Rev. A Page 4 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVE